公开(公告)号：US12258674B2

公开(公告)日：2025-03-25

申请号：US18077455

申请日：2022-12-08

Applicant: SHINSHU UNIVERSITY ,  Fujikoshi Machinery Corp.

Inventor： Keigo Hoshikawa ,  Toshinori Taishi ,  Takumi Kobayashi

IPC: C30B29/16 ,  C30B11/00 ,  C30B35/00

Abstract: A production apparatus for a metal oxide single crystal according to the present invention includes a crucible for housing a crystal raw material and a seed crystal, which has a first end and a second end, and in which the crystal raw material is disposed on a first end side, and the seed crystal is disposed on a second end side, a heater that heats the crucible, and a cooling rod, which has a third end and a fourth end, and in which the third end is provided in contact with or in proximity to the second end of the crucible so as to cool the second end by depriving the second end of heat.

公开(公告)号：US20250073844A1

公开(公告)日：2025-03-06

申请号：US18781068

申请日：2024-07-23

Applicant: Fujikoshi Machinery Corp.

Inventor： Yosuke KANAI

IPC: B24B41/047

Abstract: A polishing head includes a backing material including a suction surface facing an upper surface of a workpiece and an opposite pressing surface, a workpiece pressurization plate that is provided at a center portion of the pressing surface, and a first fluid chamber provided between the workpiece pressurization plate and the backing material. A control unit switches between front surface reference polishing in which inside of the first fluid chamber is pressurized to polish the workpiece in a state where the workpiece pressurization plate and the backing material are separated from each other, and back surface reference polishing in which the inside of the first fluid chamber is vacuumized or opened to the atmosphere and downward force is applied to the workpiece pressurization plate to polish the workpiece in a state where the workpiece pressurization plate and the backing material are in contact with each other.

公开(公告)号：US11795568B2

公开(公告)日：2023-10-24

申请号：US17555680

申请日：2021-12-20

Applicant: Fujikoshi Machinery Corp. ,  SHINSHU UNIVERSITY

Inventor： Keigo Hoshikawa ,  Toshinori Taishi ,  Takumi Kobayashi ,  Yoshio Otsuka ,  Etsuko Ohba

IPC: C30B11/00 ,  C30B29/16

CPC classification number: C30B11/003 ,  C30B29/16

Abstract: A production apparatus for a metal oxide single crystal according to one aspect of the present invention includes: a furnace having an interior heated to a temperature of 1,500° C. or more in an oxidative atmosphere, a heater heating the interior of the furnace, an inlet pipe being disposed in a lower part of the furnace and connecting an interior and an exterior of the furnace, an exhaust pipe being disposed in an upper part of the furnace and connecting an interior and an exterior of the furnace, a duct being disposed above the furnace, and an exhaust fan and a harmful substance elimination device being disposed in the middle of the duct.

公开(公告)号：US20220297223A1

公开(公告)日：2022-09-22

申请号：US17696361

申请日：2022-03-16

Applicant: Toshiro DOI ,  National University Corporation Nagaoka University of Technology ,  Fujikoshi Machinery Corp.

Inventor： Hideo AIDA ,  Hidetoshi TAKEDA ,  Toshiro DOI ,  Tadakazu MIYASHITA ,  Atsushi KAJIKURA

IPC: B23K10/00 ,  H01J37/32

Abstract: A work processing apparatus performs processing of a surface to be processed of a work by causing a processing head to come into sliding contact with the work held on an upper surface of a holding plate. The processing head includes a plasma electrode that generates plasma and radiates the plasma to the surface to be processed of the work. In the plasma electrode, an annular or solid cylindrical central electrode provided at a center in a radial direction and an annular outer circumferential electrode provided at an outer side in the radial direction with respect to the central electrode are arranged with an annular slit portion intermediating therebetween at a boundary position thereof, the slit portion is configured as a plasma generation space, and a processing pad is provided at bottom surfaces of the central electrode and the outer circumferential electrode.

公开(公告)号：US20220243357A1

公开(公告)日：2022-08-04

申请号：US17533377

申请日：2021-11-23

Applicant: Fujikoshi Machinery Corp. ,  SHINSHU UNIVERSITY

Inventor： Keigo HOSHIKAWA ,  Toshinori TAISHI ,  Takumi KOBAYASHI ,  Yoshio OTSUKA

IPC: C30B11/00 ,  C30B29/16

Abstract: There is provided a production apparatus for a gallium oxide crystal using the vertical Bridgman method and a production method using the production apparatus. A production apparatus for a gallium oxide crystal using a vertical Bridgman method including: a furnace body formed of a heat resistant material; a crucible shaft freely movable vertically, being extended in the furnace body, and penetrating through a bottom portion of the furnace body in the vertical direction; a crucible for housing a material of a gallium oxide crystal, being disposed on the crucible shaft; a body heater for heating the crucible, being disposed around a periphery of the crucible; and an annealing chamber for annealing the crucible, being disposed under the furnace body, and being connected to a furnace space in the furnace body.

公开(公告)号：US20220196390A1

公开(公告)日：2022-06-23

申请号：US17604553

申请日：2020-04-09

Applicant: Fujikoshi Machinery Corp.

Inventor： Chihiro MIYAGAWA ,  Kazutaka SHIBUYA ,  Kiyohito AOKI

IPC: G01B11/06 ,  H01L21/304 ,  G01N21/95 ,  H01L21/66

Abstract: A non-contact-type apparatus for measuring wafer thickness includes a monolithic-type wavelength sweeping semiconductor laser light source having a laser source, a laser control unit that controls the laser source, and a processor to control the laser source to oscillate laser light having a wavelength that changes with a setting profile relative to time; an optical system that guides and emits the laser light onto a wafer; a detection unit that detects an interference light signal of reflected light; an A/D converter that converts the interference light signal detected by the detection unit into a digital signal; and a calculation unit that calculates a thickness of the wafer by analyzing the digital signal from the A/D converter. The processor causes the laser control unit to operate with a clock signal, and to oscillate laser light that performs wavelength-sweeping with the setting profile relative to the time, from the laser source. The A/D converts the interference light signal by generating a sampling clock in synchronization with the clock signal or directly using the clock signal as a sampling clock.

公开(公告)号：US20210269941A1

公开(公告)日：2021-09-02

申请号：US17183753

申请日：2021-02-24

Applicant: Fujikoshi Machinery Corp. ,  SHINSHU UNIVERSITY ,  Novel Crystal Technology, Inc.

Inventor： Keigo HOSHIKAWA ,  Takumi KOBAYASHI ,  Yoshio OTSUKA ,  Toshinori TAISHI

IPC: C30B35/00 ,  C30B11/00

Abstract: A gallium oxide crystal manufacturing device includes a crucible to hold a gallium oxide source material therein, a crucible support that supports the crucible from below, a crucible support shaft that is connected to the crucible support from below and vertically movably supports the crucible and the crucible support, a tubular furnace core tube that surrounds the crucible, the crucible support and the crucible support shaft, a tubular furnace inner tube that surrounds the furnace core tube, and a resistive heating element including a heat-generating portion placed in a space between the furnace core tube and the furnace inner tube. Melting points of the furnace core tube and the furnace inner tube are not less than 1900° C. A thermal conductivity of a portion of the furnace core tube located directly next to the crucible in a radial direction thereof is higher than a thermal conductivity of the furnace inner tube.

公开(公告)号：US10414017B2

公开(公告)日：2019-09-17

申请号：US15512939

申请日：2015-09-24

Applicant: SHIN-ETSU HANDOTAI CO., LTD. ,  FUJIKOSHI MACHINERY CORP.

Inventor： Junichi Ueno ,  Michito Sato ,  Kaoru Ishii ,  Hiromi Kishida ,  Yosuke Kanai ,  Yuya Nakanishi

IPC: B24B37/005 ,  B24B49/12 ,  B24B37/34 ,  H01L21/304 ,  B24B37/10

Abstract: A polishing apparatus includes: a plurality of polishing heads for holding a wafer, a polishing pad for polishing the wafer, a rotatable turn table having the polishing pad attached thereto, a turn table driving mechanism for rotating the turn table, a plurality of wafer-detecting sensors for detecting coming off of the wafer from the polishing head during polishing, wherein the polishing apparatus has the wafer-detecting sensor disposed above peripheral portions of the respective polishing heads and on each downstream side in a rotation direction of the turn table with respect to the respective polishing heads. The polishing apparatus can detect coming off of a wafer from a polishing head during polishing more rapidly, and can prevent a breakage of the wafer thereby.

公开(公告)号：US10280530B2

公开(公告)日：2019-05-07

申请号：US15866952

申请日：2018-01-10

Applicant: FUJIKOSHI MACHINERY CORP. ,  SHINSHU UNIVERSITY

Inventor： Keigo Hoshikawa ,  Yasuyuki Fujiwara ,  Keiichi Kohama ,  Shinji Nakanishi ,  Takumi Kobayashi ,  Etsuko Ohba

IPC: C30B11/00 ,  C22C5/04 ,  C30B29/30 ,  C30B29/16

Abstract: To provide a single crystal production apparatus that is capable of prolonging the lifetime of a heater, and capable of reducing the cost. A single crystal production apparatus of the present invention is the single crystal production apparatus which produces a single crystal of a metal oxide in an oxidative atmosphere, containing: a base body; a cylindrical furnace body having heat resistance disposed above the base body; a lid member occluding the furnace body; a heater disposed inside the furnace body; a high frequency coil heating the heater through high frequency induction heating; and a crucible heated with the heater, the heater containing a Pt-based alloy and having a zirconia coating on an overall surface of the heater.

公开(公告)号：US20180222008A1

公开(公告)日：2018-08-09

申请号：US15750329

申请日：2016-08-03

Applicant: SHIN-ETSU HANDOTAI CO., LTD. ,  FUJIKOSHI MACHINERY CORP.

Inventor： Michito SATO ,  Junichi UENO ,  Kaoru ISHII ,  Yosuke KANAI ,  Yuya NAKANISHI

IPC: B24B37/10 ,  B24B57/02

CPC classification number: B24B37/107 ,  B24B37/00 ,  B24B37/12 ,  B24B57/02 ,  H01L21/304 ,  Y02P70/177

Abstract: The present invention provides a polishing apparatus including: a turntable which has a polishing pad attached thereto; a polishing head configured to hold a wafer; a tank configured to store a polishing agent; a polishing agent supply mechanism which supplies the polishing agent stored in the tank to the polishing pad; a waste liquid receiver which collects the polishing agent flowing down from an upper side of the turntable; and a circulation mechanism which is connected to the waste liquid receiver and supplies the polishing agent collected by the waste liquid receiver to the tank, the polishing agent is supplied to the polishing pad from the tank by the polishing agent supply mechanism, the used polishing agent which flows down from the upper side of the turntable is collected by the waste liquid receiver, a surface of the wafer held by the polishing head is rubbed against the polishing pad so that it is polished while supplying the collected polishing agent to the tank to circulate the polishing agent, and the polishing apparatus is characterized in that the waste liquid receiver is fixed to the turntable. Consequently, it is possible to provide the polishing agent which can suppress mixture with other solutions at the time of collecting the polishing agent to be reused, can suppress degradation of collection efficiency of the polishing agent, and can be easily maintained.