Abstract:
A gallium oxide crystal manufacturing device includes a crucible to hold a gallium oxide source material therein, a crucible support that supports the crucible from below, a crucible support shaft that is connected to the crucible support from below and vertically movably supports the crucible and the crucible support, a tubular furnace core tube that surrounds the crucible, the crucible support and the crucible support shaft, a tubular furnace inner tube that surrounds the furnace core tube, and a resistive heating element including a heat-generating portion placed in a space between the furnace core tube and the furnace inner tube. Melting points of the furnace core tube and the furnace inner tube are not less than 1900° C. A thermal conductivity of a portion of the furnace core tube located directly next to the crucible in a radial direction thereof is higher than a thermal conductivity of the furnace inner tube.
Abstract:
A crucible for growing a metal oxide single crystal is provided that can facilitate the balance between the thickness and the strength (hardness) of the constant diameter portion of the crucible and is capable of performing growth of a crystal having a large diameter. The crucible according to the present invention is a crucible for growing a metal oxide single crystal, including a reinforcing belt material provided on an outer periphery of a constant diameter portion of the crucible. It is possible that the crucible has an upper portion having a thickness that is smaller than a thickness of a lower portion of the crucible, and the upper portion of the crucible is the constant diameter portion.
Abstract:
The polishing head comprises: a head main body part; a carrier being connected to the head main body part; a pressure chamber; a fluid supplying section; a linear motion guide having an outer cylindrical body and a spline shaft, which is provided in the outer cylindrical body and capable of moving in an axial direction thereof, and which is prohibited to rotate with respect to the outer cylindrical body so as to transmit a rotational force to the spline shaft through the outer cylindrical body; and a rotation transmitting plate being provided between a lower end of the spline shaft and an upper face of the carrier, the rotation transmitting plate being capable of tiltably supporting the carrier and transmitting a rotational force of the spline shaft to the carrier.
Abstract:
The method of the present invention comprises the steps of: previously obtaining correlation data between surface properties of the polishing pad dressed under a plurality of stages of dressing conditions and polishing effects of the work polished by the polishing pad dressed under the dressing conditions; determining an assumed dressing condition capable of achieving an object polishing effect from the correlation data; dressing the polishing pad under the assumed dressing condition determined; polishing the work; cleaning the polishing pad which has been used for polishing the work; and measuring a surface property of the cleaned polishing pad.
Abstract:
To provide a dressing apparatus capable of uniformly dressing a polishing pad. The apparatus includes first and second dressing grind stones 51 and 52 which grind polishing pads 17 and 18 by moving in a radial direction of upper and lower polishing plates 12 and 14 while abutting on corresponding polishing pads 17 and 18, in which the first and second dressing grind stones 51 and 52 are set so as to have: an inner side region portion P; an outer side region portion Q; and an intermediate region portion R, wherein the length of each of the inner side region portion P and the outer side region portion Q extending in a circumferential direction of the polishing plates 12 and 14 is longer than the length of the intermediate region portion R extending in a circumferential direction of the polishing plates.
Abstract:
A polishing apparatus which is an index system polishing apparatus which includes a polishing head for holding a wafer, a plurality of turn tables to which polishing pads for polishing the wafer are attached, and a loading/unloading stage for loading the wafer to the polishing head or unloading the wafer from the polishing head, and which polishes the wafer while switching the turn tables to be used for polishing the wafer held at the polishing head by causing the polishing head to perform rotation movement, the polishing apparatus including a turn table upward and downward movement mechanism which allows the turn table to move upward and downward. With this polishing apparatus, it is possible to reduce an amount of displacement caused when moment load is applied on the polishing head during polishing.
Abstract:
To provide a dressing apparatus capable of uniformly dressing a polishing pad. The apparatus includes first and second dressing grind stones 51 and 52 which grind polishing pads 17 and 18 by moving in a radial direction of upper and lower polishing plates 12 and 14 while abutting on corresponding polishing pads 17 and 18, in which the first and second dressing grind stones 51 and 52 are set so as to have: an inner side region portion P; an outer side region portion Q; and an intermediate region portion R, wherein the length of each of the inner side region portion P and the outer side region portion Q extending in a circumferential direction of the polishing plates 12 and 14 is longer than the length of the intermediate region portion R extending in a circumferential direction of the polishing plates.
Abstract:
The method of the present invention is capable of polishing a high hardness work at high polishing efficiency. The method comprises the steps of: pressing a surface of the work onto a polishing part of a rotating polishing plate; and supplying slurry while performing the pressing step. The method is characterized in that an activated gas, which has been activated by gas discharge, is turned into bubbles and mixed into the slurry.
Abstract:
The heat exchanger of the present invention is capable of easily adjusting temperature of a machining liquid, e.g., slurry, etching liquid. The heat exchanger of the present invention, which adjusts temperature of the machining liquid, comprises a ceramic heat exchanging tube, which is made by baking silicon carbide (SiC).
Abstract:
A work processing apparatus performs processing of a surface to be processed of a work by causing a processing head to come into sliding contact with the work held on an upper surface of a holding plate. The processing head includes a plasma electrode that generates plasma and radiates the plasma to the surface to be processed of the work. In the plasma electrode, an annular or solid cylindrical central electrode provided at a center in a radial direction and an annular outer circumferential electrode provided at an outer side in the radial direction with respect to the central electrode are arranged with an annular slit portion intermediating therebetween at a boundary position thereof, the slit portion is configured as a plasma generation space, and a processing pad is provided at bottom surfaces of the central electrode and the outer circumferential electrode.