公开(公告)号：US11674239B2

公开(公告)日：2023-06-13

申请号：US17183753

申请日：2021-02-24

Applicant: Fujikoshi Machinery Corp. ,  SHINSHU UNIVERSITY ,  Novel Crystal Technology, Inc.

Inventor： Keigo Hoshikawa ,  Takumi Kobayashi ,  Yoshio Otsuka ,  Toshinori Taishi

IPC: C30B35/00 ,  C30B11/00

CPC classification number: C30B35/002 ,  C30B11/002 ,  C30B11/003 ,  C30B11/006

Abstract: A gallium oxide crystal manufacturing device includes a crucible to hold a gallium oxide source material therein, a crucible support that supports the crucible from below, a crucible support shaft that is connected to the crucible support from below and vertically movably supports the crucible and the crucible support, a tubular furnace core tube that surrounds the crucible, the crucible support and the crucible support shaft, a tubular furnace inner tube that surrounds the furnace core tube, and a resistive heating element including a heat-generating portion placed in a space between the furnace core tube and the furnace inner tube. Melting points of the furnace core tube and the furnace inner tube are not less than 1900° C. A thermal conductivity of a portion of the furnace core tube located directly next to the crucible in a radial direction thereof is higher than a thermal conductivity of the furnace inner tube.

公开(公告)号：US11674238B2

公开(公告)日：2023-06-13

申请号：US17158652

申请日：2021-01-26

Applicant: Fujikoshi Machinery Corp.

Inventor： Keigo Hoshikawa ,  Takumi Kobayashi ,  Yoshio Otsuka

IPC: C30B35/00 ,  C30B29/16

CPC classification number: C30B35/002 ,  C30B29/16

Abstract: A crucible for growing a metal oxide single crystal is provided that can facilitate the balance between the thickness and the strength (hardness) of the constant diameter portion of the crucible and is capable of performing growth of a crystal having a large diameter. The crucible according to the present invention is a crucible for growing a metal oxide single crystal, including a reinforcing belt material provided on an outer periphery of a constant diameter portion of the crucible. It is possible that the crucible has an upper portion having a thickness that is smaller than a thickness of a lower portion of the crucible, and the upper portion of the crucible is the constant diameter portion.

公开(公告)号：US10668593B2

公开(公告)日：2020-06-02

申请号：US15834983

申请日：2017-12-07

Applicant: Fujikoshi Machinery Corp.

Inventor： Masayuki Tsukada ,  Kazutaka Shibuya ,  Takayuki Fuse

IPC: B24B37/10 ,  B24B37/30 ,  B24B37/32 ,  B24B37/005 ,  B24B37/04 ,  H01L21/304

Abstract: The polishing head comprises: a head main body part; a carrier being connected to the head main body part; a pressure chamber; a fluid supplying section; a linear motion guide having an outer cylindrical body and a spline shaft, which is provided in the outer cylindrical body and capable of moving in an axial direction thereof, and which is prohibited to rotate with respect to the outer cylindrical body so as to transmit a rotational force to the spline shaft through the outer cylindrical body; and a rotation transmitting plate being provided between a lower end of the spline shaft and an upper face of the carrier, the rotation transmitting plate being capable of tiltably supporting the carrier and transmitting a rotational force of the spline shaft to the carrier.

公开(公告)号：US10464186B2

公开(公告)日：2019-11-05

申请号：US15394274

申请日：2016-12-29

Applicant: Fujikoshi Machinery Corp. ,  Kanazawa Institute of Technology

Inventor： Kazutaka Shibuya ,  Jun Yanagisawa ,  Yoshio Nakamura ,  Michio Uneda ,  Kenichi Ishikawa

IPC: B24B49/18 ,  B24B37/005 ,  B24B53/007 ,  B24B53/017 ,  B24B37/20 ,  B24B37/04 ,  B24B53/06 ,  B24B53/08

Abstract: The method of the present invention comprises the steps of: previously obtaining correlation data between surface properties of the polishing pad dressed under a plurality of stages of dressing conditions and polishing effects of the work polished by the polishing pad dressed under the dressing conditions; determining an assumed dressing condition capable of achieving an object polishing effect from the correlation data; dressing the polishing pad under the assumed dressing condition determined; polishing the work; cleaning the polishing pad which has been used for polishing the work; and measuring a surface property of the cleaned polishing pad.

公开(公告)号：US10286521B2

公开(公告)日：2019-05-14

申请号：US15200156

申请日：2016-07-01

Applicant: Fujikoshi Machinery Corp.

Inventor： Mitsuhiro Hara ,  Ryosuke Yoda

IPC: B24B53/017

Abstract: To provide a dressing apparatus capable of uniformly dressing a polishing pad. The apparatus includes first and second dressing grind stones 51 and 52 which grind polishing pads 17 and 18 by moving in a radial direction of upper and lower polishing plates 12 and 14 while abutting on corresponding polishing pads 17 and 18, in which the first and second dressing grind stones 51 and 52 are set so as to have: an inner side region portion P; an outer side region portion Q; and an intermediate region portion R, wherein the length of each of the inner side region portion P and the outer side region portion Q extending in a circumferential direction of the polishing plates 12 and 14 is longer than the length of the intermediate region portion R extending in a circumferential direction of the polishing plates.

公开(公告)号：US20170304992A1

公开(公告)日：2017-10-26

申请号：US15512957

申请日：2015-09-25

Applicant: SHIN-ETSU HANDOTAI CO., LTD. ,  FUJIKOSHI MACHINERY CORP.

Inventor： Michito SATO ,  Junichi UENO ,  Kaoru ISHII ,  Hiromi KISHIDA ,  Yuya NAKANISHI ,  Ryosuke YODA ,  Yosuke KANAI

IPC: B24B37/34 ,  B24B37/04 ,  B24B53/017 ,  H01L21/304

Abstract: A polishing apparatus which is an index system polishing apparatus which includes a polishing head for holding a wafer, a plurality of turn tables to which polishing pads for polishing the wafer are attached, and a loading/unloading stage for loading the wafer to the polishing head or unloading the wafer from the polishing head, and which polishes the wafer while switching the turn tables to be used for polishing the wafer held at the polishing head by causing the polishing head to perform rotation movement, the polishing apparatus including a turn table upward and downward movement mechanism which allows the turn table to move upward and downward. With this polishing apparatus, it is possible to reduce an amount of displacement caused when moment load is applied on the polishing head during polishing.

公开(公告)号：US20170008147A1

公开(公告)日：2017-01-12

申请号：US15200156

申请日：2016-07-01

Applicant: Fujikoshi Machinery Corp.

Inventor： Mitsuhiro HARA ,  Ryosuke YODA

IPC: B24B53/017

CPC classification number: B24B53/017

Abstract: To provide a dressing apparatus capable of uniformly dressing a polishing pad. The apparatus includes first and second dressing grind stones 51 and 52 which grind polishing pads 17 and 18 by moving in a radial direction of upper and lower polishing plates 12 and 14 while abutting on corresponding polishing pads 17 and 18, in which the first and second dressing grind stones 51 and 52 are set so as to have: an inner side region portion P; an outer side region portion Q; and an intermediate region portion R, wherein the length of each of the inner side region portion P and the outer side region portion Q extending in a circumferential direction of the polishing plates 12 and 14 is longer than the length of the intermediate region portion R extending in a circumferential direction of the polishing plates.

Abstract translation: 提供能够均匀地修整抛光垫的敷料装置。 该设备包括第一和第二修整磨石51和52，其通过沿着上和下抛光板12和14的径向移动同时抵靠在相应的抛光垫17和18上来研磨抛光垫17和18，其中第一和第二 修整磨石51和52被设定为具有：内侧区域部分P; 外侧区域部分Q; 和中间区域部R，其中，沿着研磨板12和14的周向延伸的内侧区域部分P和外侧区域部分Q的长度比中间区域部分R延伸的长度长 在研磨板的圆周方向上。

公开(公告)号：US09431262B2

公开(公告)日：2016-08-30

申请号：US14637546

申请日：2015-03-04

Applicant: FUJIKOSHI MACHINERY CORP.

Inventor： Kazutaka Shibuya ,  Yoshio Nakamura

IPC: H01L21/306 ,  B24B37/04 ,  B24B57/02 ,  C23F1/08 ,  C23F1/12 ,  C23F1/14 ,  H01L21/67 ,  H01J37/32 ,  H01L21/02 ,  H01L29/16 ,  H01L29/20

CPC classification number: B24B37/04 ,  B24B57/02 ,  C23F1/08 ,  C23F1/12 ,  C23F1/14 ,  H01J37/32055 ,  H01J37/32073 ,  H01J37/32348 ,  H01L21/02024 ,  H01L21/30625 ,  H01L21/67075 ,  H01L21/67092 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003

Abstract: The method of the present invention is capable of polishing a high hardness work at high polishing efficiency. The method comprises the steps of: pressing a surface of the work onto a polishing part of a rotating polishing plate; and supplying slurry while performing the pressing step. The method is characterized in that an activated gas, which has been activated by gas discharge, is turned into bubbles and mixed into the slurry.

Abstract translation: 本发明的方法能够以高抛光效率抛光高硬度的工件。 该方法包括以下步骤：将工件的表面压在旋转的抛光板的抛光部分上; 并在进行压制步骤时供给浆料。 该方法的特征在于，已经通过气体排出而活化的活性气体变成气泡并混合到浆料中。

公开(公告)号：US20020056548A1

公开(公告)日：2002-05-16

申请号：US10007820

申请日：2001-12-05

Applicant: Fujikoshi Machinery Corp.

Inventor： Yoshio Nakamura ,  Yoshio Otsuka

IPC: F28D007/10

CPC classification number: F28D7/106 ,  B24B57/02 ,  F28F21/04 ,  Y10S165/905 ,  Y10T29/4935 ,  Y10T29/49361 ,  Y10T29/5176

Abstract: The heat exchanger of the present invention is capable of easily adjusting temperature of a machining liquid, e.g., slurry, etching liquid. The heat exchanger of the present invention, which adjusts temperature of the machining liquid, comprises a ceramic heat exchanging tube, which is made by baking silicon carbide (SiC).

Abstract translation: 本发明的热交换器能够容易地调节加工液体的温度，例如浆料蚀刻液体。 调整加工液温度的本发明的热交换器包括通过烧结碳化硅（SiC）制成的陶瓷热交换管。

公开(公告)号：US12257641B2

公开(公告)日：2025-03-25

申请号：US17696361

申请日：2022-03-16

Applicant: National University Corporation Nagaoka University of Technology ,  Fujikoshi Machinery Corp. ,  Toshiro Doi

Inventor： Hideo Aida ,  Hidetoshi Takeda ,  Toshiro Doi ,  Tadakazu Miyashita ,  Atsushi Kajikura

IPC: B23K10/00 ,  H01J37/32

Abstract: A work processing apparatus performs processing of a surface to be processed of a work by causing a processing head to come into sliding contact with the work held on an upper surface of a holding plate. The processing head includes a plasma electrode that generates plasma and radiates the plasma to the surface to be processed of the work. In the plasma electrode, an annular or solid cylindrical central electrode provided at a center in a radial direction and an annular outer circumferential electrode provided at an outer side in the radial direction with respect to the central electrode are arranged with an annular slit portion intermediating therebetween at a boundary position thereof, the slit portion is configured as a plasma generation space, and a processing pad is provided at bottom surfaces of the central electrode and the outer circumferential electrode.