公开(公告)号：US06686123B2

公开(公告)日：2004-02-03

申请号：US10035772

申请日：2001-11-09

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung

IPC: G03F7004

CPC classification number: G03F7/0392 ,  G03F7/0046 ,  Y10S430/108

Abstract: Photoresist monomers of following Formulas 1 and 2, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist composition has excellent adhesiveness to a wafer, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low absorbance of light having the wavelength of 157 nm, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) and EUV (13 nm) in fabricating a minute circuit for a high integration semiconductor device. wherein, R1, R2 and R3 are as defined in the specification of the invention.

Abstract translation: 以下式1和2的光致抗蚀剂单体，其光致抗蚀剂聚合物和含有它们的光致抗蚀剂组合物。 光致抗蚀剂组合物对晶片具有优异的粘合性，并且可在四甲基氢氧化铵（TMAH）水溶液中显影。 此外，光致抗蚀剂组合物具有波长为157nm的光的吸光度低，因此适用于使用紫外光源如VUV（157nm）和EUV（13nm）的光刻工艺制造微波电路 高集成半导体器件，其中R1，R2和R3如本发明的说明书中所定义。

公开(公告)号：US06573012B1

公开(公告)日：2003-06-03

申请号：US09630620

申请日：2000-08-02

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Ki Ho Baik

IPC: G03F7039

CPC classification number: G03F7/0397 ,  G03F7/0395 ,  Y10S430/106

Abstract: The present invention provides compounds represented by formulas 1a and 1b, and photoresist polymers derived from the same. The present inventors have found that photoresist polymers derived from compounds of formulas 1a, 1b, or mixtures thereof, having an acid labile protecting group have excellent durability, etching resistance, reproducibility, adhesiveness and resolution, and as a result are suitable for lithography processes using deep ultraviolet light sources such as KrF, ArF, VUV, EUV, electron-beam, and X-ray, which can be applied to the formation of the ultrafine pattern of 4G and 16G DRAMs as well as the DRAM below 1G: where R1, R2 and R3 are those defined herein.

Abstract translation: 本发明提供由式1a和1b表示的化合物和衍生自其的光致抗蚀剂聚合物。 本发明人已经发现，具有酸不稳定保护基的衍生自式Ia，1b化合物或其混合物的光致抗蚀剂聚合物具有优异的耐久性，耐腐蚀性，再现性，粘合性和分辨率，因此适用于使用 深紫外光源如KrF，ArF，VUV，EUV，电子束和X射线，可用于形成4G和16G DRAM的超细格局以及低于1G的DRAM：其中R1， R2和R3是本文定义的那些。

公开(公告)号：US06489432B2

公开(公告)日：2002-12-03

申请号：US09747362

申请日：2000-12-22

Applicant: Min-Ho Jung ,  Sung-Eun Hong ,  Jae-Chang Jung ,  Geun-Su Lee ,  Ki-Ho Baik

Inventor： Min-Ho Jung ,  Sung-Eun Hong ,  Jae-Chang Jung ,  Geun-Su Lee ,  Ki-Ho Baik

IPC: C08G224

CPC classification number: C08F8/00 ,  C08F2800/10 ,  C08F116/36

Abstract: The present invention provides a polymer that can be used as an anti-refelctive coating (ARC) polymer, an ARC composition comprising the same, methods for producing the same, and methods for using the same. The polymer of the present invention is particularly useful in a submicrolithographic process, for example, using KrF (248 nm), ArF (193 nm), or F2 (157 nm) laser as a light source. The polymer of the present invention comprises a chromophore that is capable of absorbing light at the wavelengths used in a submicrolithographic process. Thus, the ARC of the present invention significantly reduces or prevents back reflection of light and the problem of the CD alteration caused by the diffracted and/or reflected light. The ARC of the present invention also significantly reduces or eliminates the standing wave effect and reflective notching. Therefore, the polymer of the present invention can be used to produce a stable ultrafine pattern that is suitable in manufacturing of 64M, 256M, 1G, 4G and 16G DRAM semiconductor devices. Moreover, the ARC of the present invention significantly improves the production yield of such semiconductor devices.

Abstract translation: 本发明提供可用作抗反射涂层（ARC）聚合物的聚合物，包含其的ARC组合物，其制备方法及其使用方法。 本发明的聚合物在亚微光刻工艺中特别有用，例如使用KrF（248nm），ArF（193nm）或F2（157nm）激光作为光源。 本发明的聚合物包括能够吸收在亚微光刻工艺中使用的波长的光的发色团。 因此，本发明的ARC显着地减少或防止了光的反射和由衍射光和/或反射光引起的CD改变的问题。 本发明的ARC还显着地减少或消除驻波效应和反射性切口。 因此，本发明的聚合物可以用于制造适合于制造64M，256M，1G，4G和16G DRAM半导体器件的稳定超细晶格。 此外，本发明的ARC显着提高了这种半导体器件的生产成本。

公开(公告)号：US06465147B1

公开(公告)日：2002-10-15

申请号：US09468984

申请日：1999-12-21

Applicant: Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

IPC: G03C173

CPC classification number: G03F7/0382 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/115 ,  Y10S430/122 ,  Y10S430/126

Abstract: The present invention relates to a cross-linker for a photoresist polymer, and a process for forming a negative photoresist pattern by using the same. Preferred cross-linkers according to the invention comprise compounds having two or more aldehyde groups, such as glutaric dialdehyde, 1,4-cyclohexane dicarboxaldehyde, or the like. Further, a photoresist composition is disclosed, which comprises (i) a cross-linker as described above, (ii) a photoresist copolymer comprising a hydroxyl-containing alicyclic monomer, (iii) a photoacid generator and (iv) an organic solvent, as well as a process for forming a photoresist pattern using such photoresist composition.

Abstract translation: 本发明涉及光致抗蚀剂聚合物的交联剂，以及通过使用该光致抗蚀剂聚合物形成负性光致抗蚀剂图案的方法。 根据本发明的优选的交联剂包含具有两个或多个醛基的化合物，例如戊二醛，1,4-环己烷二甲醛等。此外，公开了光致抗蚀剂组合物，其包含（i）交联剂 如上所述，（ii）包含含羟基的脂环族单体，（iii）光酸产生剂和（iv）有机溶剂）的光致抗蚀剂共聚物以及使用这种光致抗蚀剂组合物形成光致抗蚀剂图案的方法。

公开(公告)号：US06426171B1

公开(公告)日：2002-07-30

申请号：US09627714

申请日：2000-07-28

Applicant: Min Ho Jung ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

Inventor： Min Ho Jung ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

IPC: G03F7004

CPC classification number: C07D295/088 ,  G03F7/0395

Abstract: The present invention provides novel bicyclic photoresist monomers, and photoresist copolymer derived from the same. The bicyclic photoresist monomers of the present invention are represented by the formula: where m, n, R, V and B are those defined herein. The photoresist composition comprising the photoresist copolymer of the present invention has excellent etching resistance and heat resistance, and remarkably enhanced PED stability (post exposure delay stability).

Abstract translation: 本发明提供了新的双环光致抗蚀剂单体和衍生自其的光致抗蚀剂共聚物。 本发明的双环光致抗蚀剂单体由下式表示：其中m，n，R，V和B是本文定义的那些。 包含本发明的光致抗蚀剂共聚物的光致抗蚀剂组合物具有优异的耐蚀刻性和耐热性，并且显着提高PED稳定性（曝光后延迟稳定性）。

公开(公告)号：US06399272B1

公开(公告)日：2002-06-04

申请号：US09595434

申请日：2000-06-15

Applicant: Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Cha Won Koh ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

IPC: B03F7004

CPC classification number: G03F7/0392 ,  G03F7/0045

Abstract: The present invention relates to a phenylenediamine derivative of the formula: where B and B′ are defined herein. The phenylenediamine derivatives of the present invention are useful as an additive in a photoresist composition. For example, it has been found that photoresist. compositions comprising the phenylenediamine derivative of the present invention have a high energy latitude margin, an improved contrast value, and enhanced post exposure delay stability.

Abstract translation: 本发明涉及下式的苯二胺衍生物：其中B和B'在本文中定义。 本发明的苯二胺衍生物可用作光致抗蚀剂组合物中的添加剂。 例如，已经发现光致抗蚀剂。 包含本发明的苯二胺衍生物的组合物具有高能量纬度裕度，改善的对比度值和增强的后曝光延迟稳定性。

公开(公告)号：US06387589B1

公开(公告)日：2002-05-14

申请号：US09640262

申请日：2000-08-16

Applicant: Cha Won Koh ,  Geun Su Lee ,  Ki Ho Baik

Inventor： Cha Won Koh ,  Geun Su Lee ,  Ki Ho Baik

IPC: G03F7004

CPC classification number: G03F7/0046 ,  C08F232/08 ,  G03F7/0395 ,  Y10S430/115 ,  Y10S430/122 ,  C08F222/06 ,  C08F214/26

Abstract: The present invention provides photoresist polymers and photoresist compositions comprising the same. The photoresist polymer is represented by the following Chemical Formula 5. Photoresist compositions containing the polymers of the present invention have superior transmittance at 157 nm wavelength, etching resistance, heat resistance, and adhesiveness. In addition, photoresist compositions of the present invention can be developed easily in 2.38 wt % aqueous TMAH solution, and are therefore suitable for lithography processes using a 157 nm wavelength-light source for fabricating a minute circuit of a high integration semiconductor device: wherein R, R*, X, Y, V, W, i, j, w, x, y and z are as described herein.

Abstract translation: 本发明提供了包含其的光致抗蚀剂聚合物和光致抗蚀剂组合物。 光致抗蚀剂聚合物由以下化学式5表示。含有本发明聚合物的光致抗蚀剂组合物在157nm波长，耐蚀刻性，耐热性和粘合性方面具有优异的透光率。 此外，本发明的光致抗蚀剂组合物可以在2.38重量％的TMAH水溶液中容易地开发，因此适用于使用157nm波长光源制造高集成半导体器件的微小电路的光刻工艺：其中R ，R *，X，Y，V，W，i，j，w，x，y和z如本文所述。

公开(公告)号：US06368770B1

公开(公告)日：2002-04-09

申请号：US09621125

申请日：2000-07-21

Applicant: Min Ho Jung ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

Inventor： Min Ho Jung ,  Jae Chang Jung ,  Geun Su Lee ,  Ki Ho Baik

IPC: G03F7004

CPC classification number: G03F7/039 ,  C07C69/753 ,  C08F32/08 ,  G03F7/0045 ,  Y10S430/114 ,  Y10S430/122

Abstract: The present invention provides a novel photoresist monomer, photoresist copolymer derived from the same, and the photoresist composition comprising the same. In particular, the present invention provides a photoresist monomer of the formula: wherein, A, A′, X, m and n are those defined herein. The photoresist composition of the present invention has an excellent etching and heat resistance, and enhances the resolution and profile of the photoresist film.

Abstract translation: 本发明提供了一种新型光致抗蚀剂单体，衍生自其的光致抗蚀剂共聚物和包含该光致抗蚀剂的光致抗蚀剂组合物。 特别地，本发明提供下式的光致抗蚀剂单体：其中A，A'，X，m和n是本文定义的那些。 本发明的光致抗蚀剂组合物具有优异的蚀刻和耐热性，并且提高了光致抗蚀剂膜的分辨率和轮廓。

公开(公告)号：US06359153B1

公开(公告)日：2002-03-19

申请号：US09428171

申请日：1999-10-27

Applicant: Geun Su Lee ,  Chang Il Choi ,  Hyeong Soo Kim ,  Jin Soo Kim ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

Inventor： Geun Su Lee ,  Chang Il Choi ,  Hyeong Soo Kim ,  Jin Soo Kim ,  Jae Chang Jung ,  Min Ho Jung ,  Ki Ho Baik

IPC: C07D30700

CPC classification number: C07D307/00 ,  C07C43/315 ,  C07C43/317 ,  C07C2601/08 ,  C07C2601/14 ,  C07C2602/42

Abstract: The present invention relates to monomers for preparing photoresist polymer resins which can be used in a photolithography process employing a deep ultraviolet light source, and the preparation of the same. Preferred monomers are represented by following Chemical Formula 1: wherein, X represents CH2, CH2CH2, or oxygen; R1 represents hydrogen, C1-C5 alkyl, or R′OH; R2 represents hydrogen; —OH, C1-C5 alkoxy, or —OR′—OH; R′ represents:  and, m is an integer from 1-5, n is 1 or 2 and p is 0 or 1.

Abstract translation: 本发明涉及可用于采用深紫外光源的光刻工艺及其制备方法中制备光致抗蚀剂聚合物树脂的单体。 优选的单体由以下化学式1表示：化学式1其中X表示CH 2，CH 2 CH 2或氧; R 1表示氢，C 1 -C 5烷基或R 10 OH; R 2表示氢; -OH，C1-C5烷氧基或-OR'-OH; R'表示：并且m为1-5的整数，n为1或2，p为0或1。

公开(公告)号：US06316162B1

公开(公告)日：2001-11-13

申请号：US09301945

申请日：1999-04-29

Applicant: Jae Chang Jung ,  Myoung Soo Kim ,  Hyung Gi Kim ,  Chi Hyeong Roh ,  Geun Su Lee ,  Min Ho Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

Inventor： Jae Chang Jung ,  Myoung Soo Kim ,  Hyung Gi Kim ,  Chi Hyeong Roh ,  Geun Su Lee ,  Min Ho Jung ,  Cheol Kyu Bok ,  Ki Ho Baik

IPC: G03F738

CPC classification number: C08F8/42 ,  C08F222/06 ,  C08F232/04 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/38 ,  Y10S430/106

Abstract: The present invention relates to a polymer represented by following Formula 1 and a method of forming a micro pattern using the same: wherein, R is C1-C10 primary or secondary alcohol group; m and n independently represent a number from 1 to 3; and the ratio a:b:c is (10-80)mol %:(10-80)mol %:(10-80)mol %, respectively. The photoresist polymer according to the present invention is suitable for forming an ultra-micro pattern such as used in 4G or 16G DRAM semiconductor devices using a light source such as ArF, an E-beam, EUV, or an ion-beam.

Abstract translation: 本发明涉及由下式1表示的聚合物和使用其形成微图案的方法：其中R是C1-C10伯或仲醇基; m和n独立地表示1至3的数; a：b：c为（10-80）摩尔％：（10-80）摩尔％：（10-80）摩尔％。本发明的光致抗蚀剂聚合物适用于形成超细纤维， 微型图案，例如在使用诸如ArF，电子束，EUV或离子束的光源的4G或16G DRAM半导体器件中使用。