摘要:
Methods of forming a resistive memory device include forming an insulation layer on a semiconductor substrate including a conductive pattern, forming a contact hole in the insulation layer to expose the conductive pattern, forming a lower electrode in the contact hole, forming a variable resistive oxide layer in the contact hole on the lower electrode, forming a middle electrode in the contact hole on the variable resistive oxide layer, forming a buffer oxide layer on the middle electrode and the insulation layer, and forming an upper electrode on the buffer oxide layer. Related resistive memory devices are also disclosed.
摘要:
A precondition reliability test of a semiconductor package, to determine a propensity of the package to delaminate, includes a baking test of drying the package, a moisture soaking test of moisturizing the dried package, a reflow test of heat-treating the moisturized package using hot air convection, and a three-dimensional imaging of the package to acquire a 3-D image of a surface of the package. The three-dimensional imaging is preferably carried out using a Moire interferometry technique during the course of the reflow test. Therefore, the delamination of the package can be observed in real time so that data on the start and rapid development of the delamination can be produced. The method also allows data which can be ordered as a Weibull Plot to be produced, thereby enabling a quantitative analysis of the reliability test results.
摘要:
A panel gripping jig for gripping a panel, regardless of the size and shape of the panel, includes a welding unit for temporarily holding the panel. A separation unit releases the coupling state of the panel and the welding unit. A mounting arm has the welding unit mounted thereon, moves the welding unit in a longitudinal direction thereof, and has a connection part to connect the mounting arm to a working robot. A displacement unit adjusts the position of the welding unit on the mounting arm. A control board outputs control signals to operate the welding unit, the separation unit, and the displacement unit according to a user input.
摘要:
A sound signal processor and a method for processing a sound signal using the same enables the elimination of a plop noise generated in the course of a sound mode checking operation. The sound signal processor receives a sound intermediate frequency (SIF) signal and includes a channel mode discriminator for determining a current sound mode of the received SIF signal; a mode transition checker for performing a checking operation to determine whether the current sound mode has resulted from a transition from a first sound mode to a second sound mode; an amplitude measurement circuit for measuring an amplitude of the received SIF signal; and a controller for controlling a drive of the mode transition checker according to the measured amplitude. If the sound channel mode of a currently input sound signal is a mono channel mode, the amplitude of the input sound signal is measured, and the measured amplitude is compared to a reference level. A process for checking whether the sound mode makes a transition from the mono channel mode to a stereo/dual channel mode is performed according to the comparison, whereby the process is either repeatedly executed or is discontinued. The checking process is prevented from being unnecessarily executed and thereby prevents the generation of a plop noise.
摘要:
Methods of forming a resistive memory device include forming an insulation layer on a semiconductor substrate including a conductive pattern, forming a contact hole in the insulation layer to expose the conductive pattern, forming a lower electrode in the contact hole, forming a variable resistive oxide layer in the contact hole on the lower electrode, forming a middle electrode in the contact hole on the variable resistive oxide layer, forming a buffer oxide layer on the middle electrode and the insulation layer, and forming an upper electrode on the buffer oxide layer. Related resistive memory devices are also disclosed.
摘要:
A mutual authentication method in a Downloadable Conditional Access System (DCAS) is provided. The mutual authentication method may receive authentication-related information about authentication between an authentication unit and a security module (SM) from a Trusted Authority (TA), generate an authentication session key using the authentication-related information, transmit the authentication session key by the authentication unit to the SM through a Cable Modem Termination System (CMTS), and control a Conditional Access System (CAS) software to be downloaded to the SM from the authentication unit, when the authentication is completed by the authentication session key.
摘要:
A method of verifying a validity of a Secure Micro (SM) is provided. The method of verifying a validity of an SM, the method including: storing and maintaining a validity verification message used to verify the validity of the SM, the validity verification message being generated by a Trusted Authority (TA) based on unique information of the SM, and the SM and the TA sharing the unique information of the SM; and verifying the validity of the SM using the validity verification message and the unique information shared by the SM, when an SM client is executed.
摘要:
A method of controlling a download load of a Secure Micro (SM) client in a Downloadable Conditional Access System (DCAS) is provided. The method of controlling a download load of an SM client including: analyzing version information of SMs and version information of SM clients to control the download load generated in the DCAS, the version information of the SMs and the version information of the SM clients being provided from an Authentication Proxy (AP) server, and the SM clients being installed in the SMs; determining a download policy associated with a download time of a target SM client for the SMs based on a result of the analysis; and providing the AP server with the determined download policy.
摘要:
The present invention relates to a method for fabricating flash memory devices. The method may include the steps of forming an oxide/nitride/oxide (ONO) layer over a semiconductor substrate and a gate electrode on the ONO layer. Next, source/drain impurity region may be formed in a surface of the semiconductor substrate on both sides of the gate electrode and a pre-metal dielectric (PMD) layer may be formed over an entire surface of the semiconductor substrate including the gate electrode. Finally, a densification process for densifying the PMD layer may be performed under a gas atmosphere. A densification gas atmosphere used for densifying the PMD layer may include an H2 or N2/H2 atmosphere.
摘要翻译:本发明涉及一种制造闪速存储器件的方法。 该方法可以包括以下步骤:在半导体衬底上形成氧化物/氮化物/氧化物(ONO)层,并在ONO层上形成栅电极。 接下来,可以在栅极两侧的半导体衬底的表面中形成源/漏杂质区,并且可以在包括栅电极的半导体衬底的整个表面上形成预金属电介质(PMD)层。 最后,可以在气体气氛下进行致密化PMD层的致密化过程。 用于致密化PMD层的致密化气体气氛可以包括H 2或N 2 / H 2气氛。
摘要:
A headrest apparatus may include a headrest fixing member connected to a headrest assembly, a guide member connected to a seatback frame inside the seat back, wherein the guide member including a guide portion and a locking portion guides forward and backward movement of the headrest fixing member, at least an elastic member coupling the guide member and the headrest fixing member and configured to bias the headrest fixing member in the forward direction of the seat back so that the headrest fixing member moves in the forward direction and then is locked to the locking portion of the guide member by the elastic member when the seat back is unfolded, and a locking release unit pivotally coupled to the guide member and configured to release the headrest fixing member from the locking portion of the guide member in accordance with the seat back when the seat back is folded.