Abstract:
A highly integrated non-volatile memory device and a method of operating the non-volatile memory device are provided. The non-volatile memory device includes a semiconductor layer. A plurality of upper control gate electrodes are arranged above the semiconductor layer. A plurality of lower control gate electrodes are arranged below the semiconductor layer, and the plurality of upper control gate electrodes and the plurality of lower control gate electrodes are disposed alternately. A plurality of upper charge storage layers are interposed between the semiconductor layer and the upper control gate electrodes. A plurality of lower charge storage layers are interposed between the semiconductor layer and the lower control gate electrodes.
Abstract:
A method of driving a plasma display panel is disclosed, in which the plasma display panel includes one frame divided into a plurality of subfields, the subfield being classified into a reset period, an address period, and a sustain period in order to display a gray scale of the panel by discharge of the subfields. The method includes gradually decreasing a voltage level of a scan electrode at a ending point of ramp-down in each reset period, a voltage level of a scan pulse applied to a selected scan electrode in the address period, or a voltage level of a sustain electrode according to progress of the subfields, thereby improving a stable and rapid address discharge characteristic of the plasma display panel and increasing luminance and contrast ratio of the plasma display panel by obtaining a sufficient sustain discharge time.
Abstract:
A method of fabricating a semiconductor device and a semiconductor device fabricated thereby. The method of fabricating the semiconductor device includes forming gate electrodes on a semiconductor substrate; forming source/drain regions within the semiconductor substrate so as to be located at both sides of each of the gate electrodes; forming a nickel silicide layer on surfaces of the gate electrodes and the source/drain regions by evaporating nickel or nickel alloy on the semiconductor substrate formed with the gate electrodes and the source/drain regions and then performing a thermal process on the nickel or the nickel alloy; forming an interlayer insulating layer, which is formed with contact holes through which a surface of the nickel silicide layer is exposed, on a surface obtained after the above processes have been performed; forming an ohmic layer by evaporating a refractory metal conformably along the contact holes, the refractory metal being converted to silicide at a temperature of 500° C. or more; forming a diffusion barrier on the ohmic layer conformably along the contact holes; and forming a metal layer by burying a metal material within the contact holes.
Abstract:
A nanowire memory device and a method of manufacturing the same are provided. A memory device includes: a substrate; a first electrode formed on the substrate; a first nanowire extending from an end of the first electrode; a second electrode formed over the first electrode to overlap the first electrode; and a second nanowire extending from an end of the second electrode corresponding to the end of the first electrode in the same direction as the first nanowire, wherein an insulating layer exists between the first and second electrodes.
Abstract:
A method of fabricating a nanowire memory device, and a system of controlling nanowire formation used in the same method are provided. In the method of fabricating a nanowire memory device which includes a substrate; an electrode formed on the substrate and insulated from the substrate; and a nanowire having its one end connected with the electrode and formed at a given length, the method comprises: forming an electrode and a dummy electrode to be paired with the electrode on the substrate; forming the nanowire between the electrode and the dummy electrode while measuring a current flowing between the electrode and the dummy electrode, and cutting power applied between the electrode and the dummy electrode when the current measured is a given value; and removing the dummy electrode.
Abstract:
A data monitoring system in communication network has the global position system (GPS) receiver, a packet data collecting device and a mobile station-packet data serving node monitoring system (MPMS). The GPS receiver provides time information which is received from the GPS satellites. The packet data collecting device collects the communication protocol and communication environment information between a base station and a packet data serving node (PDSN), together with the time information provided by the GPS receiver. The MPMS receives wireless communication environment, data communication environment and mobile communication protocol of the mobile station together with the GPS time information, and receives packet data communication environment and data communication protocol of the mobile station from the packet data collecting device together with the time information, and monitors and analyzes on a single time axis.
Abstract:
The invention is directed to particular polymer compositions that may be generally characterized by the formula: wherein the variables L, M and N represent the relative molar fractions of the monomers and satisfy the expressions 0
Abstract:
A data monitoring system in communication network has the global position system (GPS) receiver, a packet data collecting device and a mobile station-packet data serving node monitoring system (MPMS). The GPS receiver provides time information which is received from the GPS satellites. The packet data collecting device collects the communication protocol and communication environment information between a base station and a packet data serving node (PDSN), together with the time information provided by the GPS receiver. The MPMS receives wireless communication environment, data communication environment and mobile communication protocol of the mobile station from the mobile station together with the GPS time information, and receives packet data communication environment and data communication protocol of the mobile station from the packet data collecting device together with the time information, and monitors and analyzes on a single time axis. Accordingly, wireless communication environment and data environment between mobile communication network and data communication network, can be monitored and analyzed on a single time axis.
Abstract:
A refrigerator including [comprising a main body forming a refrigerator compartment and a freezer compartment, each of a freezer compartment main duct and a refrigerator compartment main duct comprising at least one exiting hole and one returning hole communicating respectively with the freezer compartment and the refrigerator compartment, a freezer compartment evaporator and a refrigerator compartment evaporator provided in the freezer compartment main duct and the refrigerator compartment main duct, respectively, and generating cooling air, and a freezer compartment fan and a refrigerator compartment fan provided in the freezer compartment main duct and the refrigerator compartment main duct, respectively, to let out the cooling air generated in the freezer compartment evaporator and the refrigerator compartment evaporator, respectively, through the exiting hole and to return the cooling air in the freezer compartment and the refrigerator compartment through the returning hole, comprising:] an auxiliary storage provided in a main body; an auxiliary supply duct, branched off from one of a freezer compartment main duct and a refrigerator compartment main duct, to supply the cooling air transferred by a corresponding fan to a auxiliary storage; an auxiliary returning duct returning the cooling air in the auxiliary storage to a corresponding main duct; and an auxiliary damper in at least one of the auxiliary supply duct and the auxiliary returning duct, to open and close to respectively supply and block the cooling air to the auxiliary storage.