Methods of forming a blocking pattern using a photosensitive composition and methods of manufacturing a semiconductor device
    7.
    发明申请
    Methods of forming a blocking pattern using a photosensitive composition and methods of manufacturing a semiconductor device 审中-公开
    使用光敏组合物形成阻挡图案的方法和制造半导体器件的方法

    公开(公告)号:US20090092931A1

    公开(公告)日:2009-04-09

    申请号:US12222573

    申请日:2008-08-12

    IPC分类号: G03F7/20

    摘要: A method of forming a blocking pattern includes forming a preliminary blocking layer on first and second regions of a substrate, the preliminary blocking layer being formed of a photosensitive composition including a siloxane polymer, a cross-linking agent, a photoacid generator, and a thermal acid generator, selectively exposing to light a first portion of the preliminary blocking layer, the first portion of the preliminary blocking layer being formed on the first region of the substrate, such that a cross-linked pattern is formed on the first region of the substrate, and removing a second portion of the preliminary blocking layer, the second portion of the preliminary blocking layer being formed on the second region of the substrate.

    摘要翻译: 形成阻挡图案的方法包括在基板的第一和第二区域上形成预防止层,所述预阻挡层由包含硅氧烷聚合物,交联剂,光致酸发生剂和热的 酸性发生器,选择性地暴露预备阻挡层的第一部分的光,预先阻挡层的第一部分形成在衬底的第一区域上,使得在衬底的第一区域上形成交联图案 并且去除所述预阻挡层的第二部分,所述预阻挡层的第二部分形成在所述基板的第二区域上。