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公开(公告)号：US11754451B2
公开(公告)日：2023-09-12
申请号：US18081255
申请日：2022-12-14
Applicant: NEXTINPUT, Inc.
Inventor： Julius Minglin Tsai , Ryan Diestelhorst , Dan Benjamin
CPC classification number: G01L1/16 , G01L1/18 , G01L5/0028 , B81B3/0072
Abstract: Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor including both piezoresistive and piezoelectric sensing elements and integrated with complementary metal-oxide-semiconductor (“CMOS”) circuitry on the same chip. The sensor employs piezoresistive strain gauges for static force and piezoelectric strain gauges for dynamic changes in force. Both piezoresistive and piezoelectric sensing elements are electrically connected to integrated circuits provided on the same substrate as the sensing elements. The integrated circuits can be configured to amplify, digitize, calibrate, store, and/or communicate force values electrical terminals to external circuitry.
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52.发明公开公开(公告)号：US20230251146A1
公开(公告)日：2023-08-10
申请号：US18117156
申请日：2023-03-03
Applicant: NEXTINPUT, INC.
Inventor： Albert Bergemont , Julius Minglin Tsai
CPC classification number: G01L1/16 , G01L1/18 , H10N30/302
Abstract: Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor. The sensor employs piezoresistive or piezoelectric sensing elements for force sensing where the force is converted to strain and converted to electrical signal. In one aspect, both the piezoresistive and the piezoelectric sensing elements are formed on one substrate and later bonded to another substrate on which the integrated circuitry is formed. In another aspect, the piezoelectric sensing element is formed on one substrate and later bonded to another substrate on which both the piezoresistive sensing element and the integrated circuitry are formed.
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公开(公告)号：US11698310B2
公开(公告)日：2023-07-11
申请号：US17215186
申请日：2021-03-29
Applicant: NextInput, Inc.
Inventor： Mehrnaz Rouhi Youssefi , Julius Minglin Tsai
CPC classification number: G01L1/18 , B81B3/0072 , B81B2201/0264 , B81B2203/04
Abstract: Described herein is a MEMS force sensor with stress concentration design. The stress concentration can be performed by providing slots, whether through or blind, and/or selective thinning of the substrate. The MEMS force sensor is in chip scale package with solder bumps or metal pillars and there are sensing elements formed on the sensor substrate at the stress concentrate area. The stress concentration can be realized through slots, selective thinning and a combination of both.
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公开(公告)号：US20230184601A1
公开(公告)日：2023-06-15
申请号：US18081255
申请日：2022-12-14
Applicant: NEXTINPUT, Inc.
Inventor： Julius Minglin Tsai , Ryan Diestelhorst , Dan Benjamin
CPC classification number: G01L1/16 , G01L1/18 , G01L5/0028 , B81B3/0072
Abstract: Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor including both piezoresistive and piezoelectric sensing elements and integrated with complementary metal-oxide-semiconductor (“CMOS”) circuitry on the same chip. The sensor employs piezoresistive strain gauges for static force and piezoelectric strain gauges for dynamic changes in force. Both piezoresistive and piezoelectric sensing elements are electrically connected to integrated circuits provided on the same substrate as the sensing elements. The integrated circuits can be configured to amplify, digitize, calibrate, store, and/or communicate force values electrical terminals to external circuitry.
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公开(公告)号：US11579028B2
公开(公告)日：2023-02-14
申请号：US16757225
申请日：2018-10-17
Applicant: NEXTINPUT, INC.
Inventor： Julius Minglin Tsai , Dan Benjamin
Abstract: MEMS force sensors for providing temperature coefficient of offset (TCO) compensation are described herein. An example MEMS force sensor can include a TCO compensation layer to minimize the TCO of the force sensor. The bottom side of the force sensor can be electrically and mechanically mounted on a package substrate while the TCO compensation layer is disposed on the top side of the sensor. It is shown the TCO can be reduced to zero with the appropriate combination of Young's modulus, thickness, and/or thermal coefficient of expansion (TCE) of the TCO compensation layer.
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Patent Agency Ranking
公开(公告)号：US11423686B2
公开(公告)日：2022-08-23
申请号：US16634495
申请日：2018-07-25
Applicant: NEXTINPUT, INC.
Inventor： Julius Minglin Tsai , Dan Benjamin
Abstract: Described herein is a ruggedized microelectromechanical (“MEMS”) sensor including both fingerprint and force sensing elements and integrated with complementary metal-oxide-semiconductor (“CMOS”) circuitry on the same chip. The sensor employs either piezoresistive or piezoelectric sensing elements for detecting force and also capacitive or ultrasonic sensing elements for detecting fingerprint patterns. Both force and fingerprint sensing elements are electrically connected to integrated circuits on the same chip. The integrated circuits can amplify, digitize, calibrate, store, and/or communicate force values and/or fingerprint patterns through output pads to external circuitry.
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57.发明申请公开(公告)号：US20220260435A1
公开(公告)日：2022-08-18
申请号：US17591706
申请日：2022-02-03
Applicant: NEXTINPUT, INC.
Inventor： Albert BERGEMONT , Julius Minglin TSAI
IPC: G01L1/16 , G01L1/18 , H01L41/113
Abstract: Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor. The sensor employs piezoresistive or piezoelectric sensing elements for force sensing where the force is converted to strain and converted to electrical signal. In one aspect, both the piezoresistive and the piezoelectric sensing elements are formed on one substrate and later bonded to another substrate on which the integrated circuitry is formed. In another aspect, the piezoelectric sensing element is formed on one substrate and later bonded to another substrate on which both the piezoresistive sensing element and the integrated circuitry are formed.
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公开(公告)号：US11385108B2
公开(公告)日：2022-07-12
申请号：US16761373
申请日：2018-11-02
Applicant: NEXTINPUT, INC.
Inventor： Julius Minglin Tsai , Ryan Diestelhorst , Dan Benjamin
Abstract: An example microelectromechanical system (MEMS) force sensor is described herein. The MEMS force sensor can include a sensor die configured to receive an applied force. The sensor die can include a first substrate and a second substrate, where a cavity is formed in the first substrate, and where at least a portion of the second substrate defines a deformable membrane. The MEMS force sensor can also include an etch stop layer arranged between the first substrate and the second substrate, and a sensing element arranged on a surface of the second substrate. The sensing element can be configured to convert a strain on the surface of the membrane substrate to an analog electrical signal that is proportional to the strain.
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59.发明授权公开(公告)号：US11243126B2
公开(公告)日：2022-02-08
申请号：US16634469
申请日：2018-07-27
Applicant: NEXTINPUT, INC.
Inventor： Albert Bergemont , Julius Minglin Tsai
IPC: G01L1/16 , G01L1/18 , H01L41/113
Abstract: Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor. The sensor employs piezoresistive or piezoelectric sensing elements for force sensing where the force is converted to strain and converted to electrical signal. In one aspect, both the piezoresistive and the piezoelectric sensing elements are formed on one substrate and later bonded to another substrate on which the integrated circuitry is formed. In another aspect, the piezoelectric sensing element is formed on one substrate and later bonded to another substrate on which both the piezoresistive sensing element and the integrated circuitry are formed.
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公开(公告)号：US20200309615A1
公开(公告)日：2020-10-01
申请号：US16764992
申请日：2018-11-16
Applicant: NEXTINPUT, INC.
Inventor： Julius Minglin TSAI , Dan BENJAMIN
Abstract: Described herein is a force attenuator for a force sensor. The force attenuator can linearly attenuate the force applied on the force sensor and therefore significantly extend the maximum sensing range of the force sensor. The area ratio of the force attenuator to the force sensor determines the maximum load available in a linear fashion.
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