公开(公告)号：US20240247406A1

公开(公告)日：2024-07-25

申请号：US18418141

申请日：2024-01-19

Applicant: SLT Technologies, Inc.

Inventor： Drew W. CARDWELL ,  Dirk EHRENTRAUT ,  Mark P. D'EVELYN ,  Rajeev Tirumala PAKALAPATI

IPC: C30B29/40 ,  C30B7/10

CPC classification number: C30B29/403 ,  C30B7/105

Abstract: Embodiments of the disclosure include a free-standing crystal, comprising a group III metal and nitrogen. The free-standing crystal may comprise: a wurtzite crystal structure; a growth direction, the growth direction being selected from one of [0 0 0 ±1], {1 0 −1 0}, {1 0 −1 ±1}, or {1 0 −1 ±2}. A first surface having a dislocation density between 1 cm−2 and 107 cm−2, the dislocations having an orientation within 30 degrees of the growth direction, and an average impurity concentration of H greater than 1017 cm−3. The free-standing crystal having at least four sets of bands, wherein each set of bands includes a first sub-band and a second sub-band, the first sub-band having a concentration of at least one impurity selected from H, O, Li, Na, K, F, Cl, Br, and I; and each of the at least four sets of bands have portions that are substantially parallel.

公开(公告)号：US12024795B2

公开(公告)日：2024-07-02

申请号：US17514656

申请日：2021-10-29

Applicant: SLT Technologies, Inc

Inventor： Mark P. D'Evelyn ,  Paul M. Von Dollen ,  Lisa M. Gay ,  Douglas W. Pocius ,  Jonathan D. Cook

IPC: C30B7/10 ,  C30B29/40

CPC classification number: C30B7/105 ,  C30B29/403

Abstract: A method for growth of group III metal nitride crystals includes providing a manifold comprising including one or more transfer vessels, a source vessel containing a condensable mineralizer composition, and a receiving vessel, chilling a metallic surface within the one or more transfer vessels, the metallic surface comprising a composition that does not form a reaction product when exposed to the condensable mineralizer composition, transferring a quantity of the condensable mineralizer composition to the one or more transfer vessels via a vapor phase and causing condensation of the condensable mineralizer composition within the one or more transfer vessels, measuring the quantity of the condensable mineralizer composition within the at least one transfer vessel, transferring at least a portion of the condensable mineralizer composition to the receiving vessel, and forming at least a portion of a group III metal nitride boule by an ammonothermal crystal growth process that comprises exposing a seed crystal to a temperature of at least about 400 degrees Celsius, and exposing the seed crystal to a mineralizer that is formed from the condensable mineralizer composition transferred from the receiving vessel.

公开(公告)号：US20240183074A1

公开(公告)日：2024-06-06

申请号：US18440646

申请日：2024-02-13

Applicant: SLT Technologies, Inc.

Inventor： Wenkan JIANG ,  Dirk EHRENTRAUT ,  Mark P. D'EVELYN

IPC: C30B29/40 ,  C01B21/06 ,  C30B7/10 ,  H01L29/20 ,  H01L29/30

CPC classification number: C30B29/406 ,  C01B21/0632 ,  C30B7/105 ,  H01L29/2003 ,  H01L29/30 ,  C01P2002/30 ,  C01P2002/74 ,  C01P2002/80 ,  C01P2006/80

Abstract: A gallium-containing nitride crystals comprising: a top surface having a crystallographic orientation within 5 degrees of a plane selected from a (0001) +c-plane and a (000-1) −c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen >5×1017 cm−3; an impurity concentration of oxygen between 2×1017 cm−3 and 1×1020 cm−3; an [H]/[O] ratio of at least 0.3; an impurity concentration of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl >1×1016 cm−3; a compensation ratio between 1.0 and 4.0; an absorbance per unit thickness of at least 0.01 cm−1 at wavenumbers of 3175 cm−1, 3164 cm−1, and 3150 cm−1; and wherein, at wavenumbers between 3200 cm−1 and 3400 cm−1 and between 3075 cm−1 and 3125 cm−1, said gallium-containing nitride crystal is essentially free of infrared absorption peaks having an absorbance per unit thickness >10% of the absorbance per unit thickness at 3175 cm−1.

公开(公告)号：US20240158951A1

公开(公告)日：2024-05-16

申请号：US18505971

申请日：2023-11-09

Applicant: SLT Technologies, Inc.

Inventor： Paul M. VON DOLLEN ,  Mark P. D'EVELYN

IPC: C30B7/10

CPC classification number: C30B7/105 ,  C30B29/403

Abstract: According to the present disclosure, techniques related to processing of materials for growth of crystals are provided. More particularly, the present disclosure provides apparatus and methods for heating of seed crystals suitable for use in conjunction with a high-pressure vessel for crystal growth of a material having a retrograde solubility in a supercritical fluid, including crystal growth of a group III metal nitride crystal by an ammonobasic or ammonoacidic technique, but there can be others. In other embodiments, the present disclosure provides methods suitable for synthesis of crystalline nitride materials, but it would be recognized that other crystals and materials can also be processed. Such crystals and materials include, but are not limited to, GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, among other devices.

公开(公告)号：US20240158950A1

公开(公告)日：2024-05-16

申请号：US18505963

申请日：2023-11-09

Applicant: SLT Technologies, Inc.

Inventor： Paul M. VON DOLLEN ,  Drew W. CARDWELL ,  Mark P. D'EVELYN ,  Rajeev Tirumala PAKALAPATI

IPC: C30B7/10

CPC classification number: C30B7/105 ,  C30B29/403

Abstract: According to the present disclosure, techniques related to processing of materials for growth of crystals are provided. More particularly, the present disclosure provides apparatus and methods for heating of seed crystals suitable for use in conjunction with a high-pressure vessel for crystal growth of a material having a retrograde solubility in a supercritical fluid, including crystal growth of a group III metal nitride crystal by an ammonobasic or ammonoacidic technique, but there can be others. In other embodiments, the present disclosure provides methods suitable for synthesis of crystalline nitride materials, but it would be recognized that other crystals and materials can also be processed. Such crystals and materials include, but are not limited to, GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic devices, lasers, light emitting diodes, solar cells, photoelectrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, among other devices.

公开(公告)号：US20240158949A1

公开(公告)日：2024-05-16

申请号：US18501951

申请日：2023-11-03

Applicant: SLT Technologies, Inc.

Inventor： Paul M. VON DOLLEN

IPC: C30B7/10 ,  B01D53/22 ,  B01D71/02

CPC classification number: C30B7/105 ,  B01D53/22 ,  B01D71/02231 ,  C30B29/403

Abstract: Embodiments of disclosure include an apparatus for high-temperature crystal growth. The apparatus can include a pressure vessel having a capsule that has an interior surface that defines an internal capsule volume, a fill tube that comprises an outer surface and an inner surface, wherein an interior fill tube volume defined by the inner surface is in fluid communication with the internal capsule volume of the capsule, a sleeve axially surrounding the outer surface of the fill tube, wherein the sleeve is configured to support the outer surface of the fill tube, along the length of the fill tube, during a high-temperature crystal growth process, and a manifold comprising an interior manifold volume that is in fluid communication with the interior fill tube volume of the fill tube.

公开(公告)号：US20240133076A1

公开(公告)日：2024-04-25

申请号：US18542594

申请日：2023-12-16

Applicant: SLT Technologies, Inc.

Inventor： Wenkan JIANG ,  Dirk EHRENTRAUT ,  Mark P. D'EVELYN

IPC: C30B29/40 ,  C01B21/06 ,  C30B7/10 ,  H01L29/20 ,  H01L29/30

CPC classification number: C30B29/406 ,  C01B21/0632 ,  C30B7/105 ,  H01L29/2003 ,  H01L29/30 ,  C01P2002/30 ,  C01P2002/74 ,  C01P2002/80 ,  C01P2006/80

Abstract: A gallium-containing nitride crystals are disclosed, comprising: a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001) +c-plane and a (000-1) −c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen greater than about 5×1017 cm−3; an impurity concentration of oxygen between about 2×1017 cm−3 and about 1×1020 cm−3; an [H]/[O] ratio of at least 0.3; an impurity concentration of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl greater than about 1×1016 cm−3; a compensation ratio between about 1.0 and about 4.0; an absorbance per unit thickness of at least 0.01 cm−1 at wavenumbers of approximately 3175 cm−1, 3164 cm−1, and 3150 cm−1; and wherein, at wavenumbers between about 3200 cm−1 and about 3400 cm−1 and between about 3075 cm−1 and about 3125 cm−1, said gallium-containing nitride crystal is essentially free of infrared absorption peaks having an absorbance per unit thickness greater than 10% of the absorbance per unit thickness at 3175 cm.

公开(公告)号：US20240026563A1

公开(公告)日：2024-01-25

申请号：US18356127

申请日：2023-07-20

Applicant: SLT Technologies, Inc.

Inventor： Mark P. D'EVELYN ,  Paul M. VON DOLLEN

IPC: C30B7/10

CPC classification number: C30B7/10

Abstract: Embodiments of the disclosure include a crystal growth apparatus, comprising a cylindrical-shaped enclosure, a primary liner disposed within the cylindrical-shaped enclosure, wherein the primary liner comprises a cylindrical wall that extends between a first end and a second end, and an interior surface of the primary liner defines an interior region, at least one load-bearing annular insulating member disposed between the cylindrical-shaped enclosure and the primary liner, a plurality of heating elements disposed between the primary liner and the at least one load-bearing annular insulating member, at least one end closure member disposed proximate to a first end of the cylindrical-shaped enclosure, and a primary liner lid disposed proximate to the first end of the cylindrical wall of the primary liner. The at least one load-bearing annular insulating member comprising at least one of a packed-bed ceramic composition, the packed-bed ceramic composition having a density that is between about 30% and about 98% of a theoretical density of a 100%-dense ceramic having the same composition, or a perforated metal member, comprising a perforated metal foil or a plurality of perforated metal plates, wherein the perforations have a percent open area between about 25% and about 90%, and the perforations have a diameter between about 1 millimeter and about 25 millimeters.

公开(公告)号：US20230170213A1

公开(公告)日：2023-06-01

申请号：US18072680

申请日：2022-11-30

Applicant: SLT Technologies, Inc.

Inventor： Mark P. D'EVELYN ,  Keiji FUKUTOMI ,  Drew W. CARDWELL ,  David N. ITALIANO

IPC: H01L21/02

CPC classification number: H01L21/02389 ,  H01L21/02433 ,  H01L21/02595

Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for substrates with a controlled oxygen gradient using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

公开(公告)号：US11661670B2

公开(公告)日：2023-05-30

申请号：US17133002

申请日：2020-12-23

Applicant: SLT Technologies, Inc

Inventor： Mark P. D'Evelyn ,  Drew W. Cardwell ,  Jonathan D. Cook

IPC: C30B28/04 ,  C30B7/10 ,  C30B29/40

CPC classification number: C30B7/105 ,  C30B28/04 ,  C30B29/406

Abstract: High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.