摘要:
A transfer print structure is provided. The transfer print structure comprises a substrate; a color ink layer including a functional region; and an adhesive device combining the functional region with the substrate.
摘要:
A method for manufacturing a color electrophoretic display device includes the following steps. First, a substrate having a displaying region and a circuit region around the displaying region is provided. Next, a driving array is formed in the displaying region. Subsequently, an electrophoretic display layer is formed on the driving array. Afterwards, a thermal transfer process is performed so that a color filter layer is formed on the electrophoretic display layer. The method can increase the production eligibility rate of the color electrophoretic display device, thereby improving the display quality of the color electrophoretic display device.
摘要:
A display panel is provided. The display panel comprises a first substrate, a second substrate, a display control circuit and a force sensing circuit. The display control circuit is disposed on the first substrate between the first substrate and the second substrate for controlling the display panel to display an image through the second substrate. The force sensing circuit is disposed side by side with the display control circuit on the first substrate between the first substrate and second substrate, wherein the force sensing circuit comprises a plurality of force sensing elements for sensing at least one external force and correspondingly generate a plurality of force signals respectively to transform at least one touch signal corresponding to the at least one external force.
摘要:
A method for manufacturing oxide thin film transistors includes steps of: forming a gate, a drain electrode, a source electrode, and an oxide semiconductor layer respectively. The oxide semiconductor layer is formed on the gate electrode; the drain electrode and the source electrode are formed at two opposite sides of the oxide semiconductor layer. The method further includes a step of depositing a dielectric layer of silicon oxide, and a reacting gas for depositing the silicon oxide includes silane and nitrous oxide. A flow rate of nitrous oxide is in a range from 10 to 200 standard cubic centimeters per minute (SCCM). Oxide thin film transistors manufactured by above method has advantages of low leakage, high mobility, and other integrated circuit member can be directly formed on the thin film transistor array substrate of a display device.
摘要:
An intermediate structure of a flexible display device includes a substrate, an etching layer, a flexible substrate, and a display module. A trench structure is formed in a surface of the substrate. The etching layer is formed on the surface and covers the substrate. The flexible substrate is disposed on the etching layer. The flexible substrate and the substrate are spaced apart from each other by the etching layer. The display module is disposed on the flexible substrate. The flexible substrate can be peeled from the substrate without applying a mechanical force and thus the yield is improved, and the process time and the fabricating cost are also reduced. In addition, the present invention also provides a substrate for fabricating a flexible display device and a method for fabricating a flexible display device.
摘要:
A display device includes a substrate, a driving circuit, an E-paper display layer and a protective coating layer. The driving circuit is arranged on the substrate. The E-paper display layer is disposed on and driven by the driving circuit. The protective coating layer is coated on and in contact with the E-paper display layer. The protective coating layer can provide protection and better optical performance, and it is advantageous to the manufacturing method to overcome the problems such as bubbles and low light transmittance occurring in the conventional manufacturing method.
摘要:
An electrophoretic display apparatus including a substrate and an electrophoretic display film is provided. The substrate has multiple pixel units, each the pixel unit has a transparent region and a reflective region and each the pixel unit includes a pixel electrode and a reflective layer. The pixel electrode is located in the transparent region and the reflective region. The reflective layer is disposed on the pixel electrode and located in the reflective region. The electrophoretic display film is disposed on the substrate and includes a common electrode and multiple microcapsules disposed between the common electrode and the pixel units, in which each the microcapsule includes multiple black electrophoretic particles, and the arrangement of the black electrophoretic particles is controlled by a driving voltage applied between the pixel electrode of each the pixel unit and the common electrode of the electrophoretic display film.
摘要:
A court border module using a display apparatus is disclosed, which uses piezoelectric elements to drive the display apparatus. When a ball hits a court border, which is defined by the display apparatus, a force is applied to the piezoelectric elements which then generate power to drive the corresponding part of the display apparatus. The color of the part of the display apparatus hit by the ball is switched. Therefore the change in the color of the court border can be observed by officials and others to instantly and objectively determine whether the ball has hit the court border.
摘要:
A method for manufacturing an oxide thin film transistor includes the steps of forming an oxide semiconductor active layer by a deposition process. In the deposition process, a total flow rate of a gas is more than 100 standard cubic centimeters per minute and an electric power is in a range from 1.5 kilowatts to 10 kilowatts. The oxide thin film transistor manufactured by the above methods has advantages of low leakage currents, high electron mobility, and excellent temperature stability. The present invention also provides a method for manufacturing a display device. The display quality of the display device can be improved.
摘要:
Disclosed herein is a method for manufacturing an active array substrate. The method includes the steps of: forming a first patterned metal layer on a substrate; sequentially forming a semiconductor layer, an insulating layer and a second metal layer to cover the first patterned metal layer; forming a patterned photoresist layer on the second metal layer; patterning the second metal layer, the insulating layer and the semiconductor layer to form a second patterned metal layer, a patterned insulating layer and a patterned semiconductor layer, and removing a portion of the patterned photoresist layer; heating the remained portion of the patterned photoresist layer such that the remained portion is fluidized and transformed into a protective layer; and forming a pixel electrode.