公开(公告)号：US08748222B2

公开(公告)日：2014-06-10

申请号：US12774562

申请日：2010-05-05

申请人： Ted-Hong Shinn ,  Henry Wang ,  Fang-An Shu ,  Yao-Chou Tsai

发明人： Ted-Hong Shinn ,  Henry Wang ,  Fang-An Shu ,  Yao-Chou Tsai

IPC分类号： H01L21/00 ,  H01L29/786 ,  H01L29/10 ,  H01L21/34

CPC分类号： H01L29/78693 ,  H01L21/34 ,  H01L29/1083 ,  H01L29/78609

摘要： A method for manufacturing oxide thin film transistors includes steps of: forming a gate, a drain electrode, a source electrode, and an oxide semiconductor layer respectively. The oxide semiconductor layer is formed on the gate electrode; the drain electrode and the source electrode are formed at two opposite sides of the oxide semiconductor layer. The method further includes a step of depositing a dielectric layer of silicon oxide, and a reacting gas for depositing the silicon oxide includes silane and nitrous oxide. A flow rate of nitrous oxide is in a range from 10 to 200 standard cubic centimeters per minute (SCCM). Oxide thin film transistors manufactured by above method has advantages of low leakage, high mobility, and other integrated circuit member can be directly formed on the thin film transistor array substrate of a display device.

摘要翻译： 制造氧化物薄膜晶体管的方法包括以下步骤：分别形成栅极，漏极，源电极和氧化物半导体层。 氧化物半导体层形成在栅电极上; 漏电极和源电极形成在氧化物半导体层的两个相对侧。 该方法还包括沉积氧化硅的介电层的步骤，并且用于沉积氧化硅的反应气体包括硅烷和一氧化二氮。 一氧化二氮的流量在10至200标准立方厘米每分钟（SCCM）的范围内。 通过上述方法制造的氧化物薄膜晶体管具有漏电流低，迁移率高的优点，其他集成电路元件可以直接形成在显示器件的薄膜晶体管阵列基板上。

公开(公告)号：US08389310B2

公开(公告)日：2013-03-05

申请号：US12699063

申请日：2010-02-03

申请人： Ted-Hong Shinn ,  Henry Wang ,  Fang-An Shu ,  Yao-Chou Tsai

发明人： Ted-Hong Shinn ,  Henry Wang ,  Fang-An Shu ,  Yao-Chou Tsai

IPC分类号： H01L21/00 ,  H01L51/40

CPC分类号： H01L21/02631 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02617 ,  H01L29/66969 ,  H01L29/7869

摘要： A method for manufacturing an oxide thin film transistor includes the steps of forming an oxide semiconductor active layer by a deposition process. In the deposition process, a total flow rate of a gas is more than 100 standard cubic centimeters per minute and an electric power is in a range from 1.5 kilowatts to 10 kilowatts. The oxide thin film transistor manufactured by the above methods has advantages of low leakage currents, high electron mobility, and excellent temperature stability. The present invention also provides a method for manufacturing a display device. The display quality of the display device can be improved.

摘要翻译： 制造氧化物薄膜晶体管的方法包括通过沉积工艺形成氧化物半导体活性层的步骤。 在沉积过程中，气体的总流量大于100标准立方厘米每分钟，电功率在1.5千瓦至10千瓦的范围内。 通过上述方法制造的氧化物薄膜晶体管具有低漏电流，高电子迁移率和优异的温度稳定性的优点。 本发明还提供一种显示装置的制造方法。 可以提高显示装置的显示质量。

公开(公告)号：US08274085B2

公开(公告)日：2012-09-25

申请号：US12789834

申请日：2010-05-28

申请人： Sung-Hui Huang ,  Henry Wang ,  Fang An Shu ,  Ted-Hong Shinn

发明人： Sung-Hui Huang ,  Henry Wang ,  Fang An Shu ,  Ted-Hong Shinn

IPC分类号： H01L29/10 ,  H01L29/12 ,  H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L21/00

CPC分类号： H01L29/45 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255

摘要： The present invention discloses pixel structures and fabrication methods thereof. The pixel includes a thin film transistor forming at a thin film transistor region and a storage capacitor forming at a pixel electrode region. The method includes: forming a gate conduction layer on a substrate; forming a gate insulation layer on the gate conduction layer; forming a source conduction layer and a drain conduction layer on the gate insulation layer, in which the drain conduction layer has an extension section extending to the pixel electrode region; forming a channel layer on the source conduction layer and the drain conduction layer; and forming a protection layer on the channel layer. The extension section and an electrode layer serve as the upper and lower electrode of the storage capacitor, respectively. Wherein the gate conduction layer, the source conduction layer, the drain conduction layer, and the channel layer are made of metallic oxides.

摘要翻译： 本发明公开了像素结构及其制造方法。 像素包括在薄膜晶体管区域形成的薄膜晶体管和在像素电极区域形成的存储电容器。 该方法包括：在衬底上形成栅极导电层; 在栅极导电层上形成栅极绝缘层; 在所述栅极绝缘层上形成源极导电层和漏极导电层，其中所述漏极导电层具有延伸到所述像素电极区域的延伸部分; 在源极导电层和漏极导电层上形成沟道层; 以及在沟道层上形成保护层。 延伸部分和电极层分别用作存储电容器的上部和下部电极。 其中栅极导电层，源极导电层，漏极导电层和沟道层由金属氧化物制成。

公开(公告)号：US20110159618A1

公开(公告)日：2011-06-30

申请号：US12699063

申请日：2010-02-03

申请人： Ted-Hong Shinn ,  Henry Wang ,  Fang-An Shu ,  Yao-Chou Ysai

发明人： Ted-Hong Shinn ,  Henry Wang ,  Fang-An Shu ,  Yao-Chou Ysai

IPC分类号： H01L33/00 ,  H01L21/44

CPC分类号： H01L21/02631 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02617 ,  H01L29/66969 ,  H01L29/7869

摘要： A method for manufacturing an oxide thin film transistor includes the steps of forming an oxide semiconductor active layer by a deposition process. In the deposition process, a total flow rate of a gas is more than 100 standard cubic centimeters per minute and an electric power is in a range from 1.5 kilowatts to 10 kilowatts. The oxide thin film transistor manufactured by the above methods has advantages of low leakage currents, high electron mobility, and excellent temperature stability. The present invention also provides a method for manufacturing a display device. The display quality of the display device can be improved.

摘要翻译： 制造氧化物薄膜晶体管的方法包括通过沉积工艺形成氧化物半导体活性层的步骤。 在沉积过程中，气体的总流量大于100标准立方厘米每分钟，电功率在1.5千瓦至10千瓦的范围内。 通过上述方法制造的氧化物薄膜晶体管具有低漏电流，高电子迁移率和优异的温度稳定性的优点。 本发明还提供一种显示装置的制造方法。 可以提高显示装置的显示质量。

公开(公告)号：US20120250135A1

公开(公告)日：2012-10-04

申请号：US13335400

申请日：2011-12-22

申请人： Chia-Chun Yeh ,  Yao-Chou Tsai ,  Henry Wang ,  Ted-Hong Shinn

发明人： Chia-Chun Yeh ,  Yao-Chou Tsai ,  Henry Wang ,  Ted-Hong Shinn

IPC分类号： G02F1/153 ,  H01J9/26

CPC分类号： G02B5/201 ,  G02F1/133516 ,  G02F1/157

摘要： A method for manufacturing a color display provides a bottom substrate, injects a liquid display media onto the bottom substrate, and disposes a sealing substrate on the liquid display media, such that the liquid display media is contained between the sealing substrate and the bottom substrate. The method also aligns an image device corresponding to the bottom substrate and transfers a color coating onto the sealing substrate by a laser device through a laser thermal transfer process to form a color filter layer on the sealing substrate.

摘要翻译： 制造彩色显示器的方法提供底部基板，将液体显示介质注入到底部基板上，并将密封基板设置在液体显示介质上，使得液体显示介质容纳在密封基板和底部基板之间。 该方法还对准与底部基板对应的图像装置，并通过激光热转印工艺通过激光装置将彩色涂层转移到密封基板上，以在密封基板上形成滤色器层。

公开(公告)号：US08724208B2

公开(公告)日：2014-05-13

申请号：US13335400

申请日：2011-12-22

申请人： Chia-Chun Yeh ,  Yao-Chou Tsai ,  Henry Wang ,  Ted-Hong Shinn

发明人： Chia-Chun Yeh ,  Yao-Chou Tsai ,  Henry Wang ,  Ted-Hong Shinn

IPC分类号： G02F1/15

CPC分类号： G02B5/201 ,  G02F1/133516 ,  G02F1/157

摘要： A method for manufacturing a color display provides a bottom substrate, injects a liquid display media onto the bottom substrate, and disposes a sealing substrate on the liquid display media, such that the liquid display media is contained between the sealing substrate and the bottom substrate. The method also aligns an image device corresponding to the bottom substrate and transfers a color coating onto the sealing substrate by a laser device through a laser thermal transfer process to form a color filter layer on the sealing substrate.

摘要翻译： 制造彩色显示器的方法提供底部基板，将液体显示介质注入到底部基板上，并将密封基板设置在液体显示介质上，使得液体显示介质容纳在密封基板和底部基板之间。 该方法还对准与底部基板对应的图像装置，并通过激光热转印工艺通过激光装置将彩色涂层转移到密封基板上，以在密封基板上形成滤色器层。

公开(公告)号：US09165955B2

公开(公告)日：2015-10-20

申请号：US13530098

申请日：2012-06-21

申请人： Wei-Chou Lan ,  Ted-Hong Shinn ,  Henry Wang ,  Chia-Chun Yeh

发明人： Wei-Chou Lan ,  Ted-Hong Shinn ,  Henry Wang ,  Chia-Chun Yeh

IPC分类号： H01L33/08 ,  H01L27/12

CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/47635 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/51 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78606

摘要： Disclosed herein is a method for manufacturing an array substrate. The method includes forming a source electrode and a drain electrode on a substrate. A semiconductor layer, an organic insulating layer, and a gate electrode layer are sequentially formed to cover the substrate, the source electrode, and the drain electrode. A patterned photoresist layer is formed on the gate electrode layer. The exposed portion of the gate electrode layer, and a portion of the organic insulative layer and a portion of the semiconductor layer thereunder are removed to form a gate electrode. An organic passivation layer is formed on the gate electrode, the source electrode, and the drain electrode. The organic passivation layer has a contact window to expose a portion of the drain electrode. A pixel electrode is formed on the organic passivation layer and the exposed portion of the drain electrode.

摘要翻译： 这里公开了一种阵列基板的制造方法。 该方法包括在基板上形成源电极和漏电极。 依次形成半导体层，有机绝缘层和栅电极层，以覆盖基板，源电极和漏电极。 在栅电极层上形成图案化的光致抗蚀剂层。 除去栅电极层的露出部分，有机绝缘层的一部分及其下面的半导体层的一部分，形成栅电极。 在栅电极，源电极和漏电极上形成有机钝化层。 有机钝化层具有暴露漏电极的一部分的接触窗口。 在有机钝化层和漏电极的露出部分上形成像素电极。

公开(公告)号：US08797635B2

公开(公告)日：2014-08-05

申请号：US13414694

申请日：2012-03-07

申请人： Chia-Chun Yeh ,  Chi-Sheng Jiang ,  Henry Wang ,  Ted-Hong Shinn

发明人： Chia-Chun Yeh ,  Chi-Sheng Jiang ,  Henry Wang ,  Ted-Hong Shinn

IPC分类号： G02B26/00

CPC分类号： G02F1/167 ,  G02F2001/1676 ,  G02F2201/50

摘要： A color electrophoretic display includes a substrate, a segment electrode circuit layer, a transparent electrode layer, an electrophoretic display medium layer, and a colored polymer film. The segment electrode circuit layer is disposed on the substrate and is configured to display a letter and/or a pattern. The transparent electrode layer is disposed opposing the segment electrode circuit layer, and the electrophoretic display medium layer is disposed between the segment electrode circuit layer and the transparent electrode layer. The electrophoretic display medium layer is controlled by an electric field that is produced and varied by the segment electrode circuit layer and the transparent electrode layer to change brightness. The color polymer film is disposed on the transparent electrode layer to produce color. The colored polymer film includes a polymer layer and pigment particles distributed in the polymer layer.

摘要翻译： 彩色电泳显示器包括基板，段电极电路层，透明电极层，电泳显示介质层和着色聚合物膜。 分段电极电路层设置在基板上并且被配置为显示字母和/或图案。 透明电极层与分段电极电路层相对配置，电泳显示介质层配置在分段电极电路层和透明电极层之间。 电泳显示介质层由通过分段电极电路层和透明电极层产生和变化的电场来控制，以改变亮度。 彩色聚合物膜设置在透明电极层上以产生颜色。 着色聚合物膜包括聚合物层和分布在聚合物层中的颜料颗粒。

公开(公告)号：US09123691B2

公开(公告)日：2015-09-01

申请号：US13615640

申请日：2012-09-14

申请人： Henry Wang ,  Chia-Chun Yeh ,  Xue-Hung Tsai ,  Chih-Hsuan Wang ,  Ted-Hong Shinn

发明人： Henry Wang ,  Chia-Chun Yeh ,  Xue-Hung Tsai ,  Chih-Hsuan Wang ,  Ted-Hong Shinn

IPC分类号： H01L29/417 ,  H01L29/10 ,  H01L29/786

CPC分类号： H01L29/41733 ,  H01L29/1037 ,  H01L29/7869

摘要： Disclosed herein is a thin film transistor. The thin film transistor is characterized in having a source interconnect layer and a drain interconnect layer. The source electrode and the drain electrode are respectively disposed above and in contact with the source interconnect layer and the drain interconnect layer. The semiconductor layer is in contact with both the source interconnect layer and the drain interconnect layer, but is not in contact with the source electrode and the drain electrode.

摘要翻译： 这里公开了一种薄膜晶体管。 薄膜晶体管的特征在于具有源极互连层和漏极互连层。 源电极和漏极分别设置在源极互连层和漏极互连层的上方并与之接触。 半导体层与源极互连层和漏极互连层两者接触，但不与源极和漏极接触。

公开(公告)号：US20130175520A1

公开(公告)日：2013-07-11

申请号：US13611279

申请日：2012-09-12

申请人： Wei-Chou Lan ,  Ted-Hong Shinn ,  Henry Wang ,  Chia-Chun Yeh

发明人： Wei-Chou Lan ,  Ted-Hong Shinn ,  Henry Wang ,  Chia-Chun Yeh

IPC分类号： H01L29/786

CPC分类号： H01L29/78696 ,  H01L29/4908

摘要： A thin film transistor suitable for being disposed on a substrate is provided. The thin film transistor includes a gate electrode, an organic gate dielectric layer, a metal oxide semiconductor layer, a source electrode and a drain electrode. The gate electrode is disposed on the substrate. The organic gate dielectric layer is disposed on the substrate to cover the gate electrode. The source electrode, the drain electrode and the metal oxide semiconductor layer are disposed above the organic gate dielectric layer, and the metal oxide semiconductor layer contacts with the source electrode and the drain electrode. Because the channel layer of the thin film transistor is a layer of metal oxide semiconductor formed at a lower temperature, thus the thin film transistor can be widely applied into various display applications such as flexible display devices.

摘要翻译： 提供了适合于设置在基板上的薄膜晶体管。 薄膜晶体管包括栅电极，有机栅介质层，金属氧化物半导体层，源电极和漏电极。 栅电极设置在基板上。 有机栅极介电层设置在基板上以覆盖栅电极。 源电极，漏电极和金属氧化物半导体层设置在有机栅极电介质层的上方，金属氧化物半导体层与源电极和漏电极接触。 由于薄膜晶体管的沟道层是在较低温度下形成的金属氧化物半导体层，因此薄膜晶体管可以广泛地应用于诸如柔性显示器件的各种显示应用中。