摘要:
Cross-component measurements in combination with standard propagation resistivity measurements are processed to estimate the vertical and horizontal resistivities, relative dip and relative azimuth of an anisotropic earth formation.
摘要:
The disclosure provides a resistivity tool for use in a wellbore, wherein at least two orthogonal antennas are located at the same or substantially the same location of the tool. A single set of vertically aligned grooves is provided for the at least two orthogonal antennas. Each antenna may be configured to operate as a transmitter or receiver. A tool with collocated antennas may be used to provide azimuthally sensitive measurements even if the tool is non-rotating.
摘要:
A method for determining fluid saturation in a formation at a plurality of radial depths near a wellbore, the method including: obtaining multi-frequency nuclear magnetic resonance (NMR) response data for the formation; and processing the data to determine simultaneously the fluid saturation at each radial depth. A computer program product is provided.
摘要:
A resistivity logging tool suitable for downhole use includes a transmitter, two spaced apart receivers. The measured signals are inverted to determine the distance to a boundary in the earth formation in the presence of a transition zone in resistivity. The direction of drilling may be controlled based on the determined distance.
摘要:
A CMOS data register includes a master stage and a slave stage. The master stage is formed of first transfer gates and first storage devices. The slave stage is formed of second transfer gates, second storage devices and third transfer gates. The transfer gates and storage devices are formed of MOS transistors of one conductivity which decreases layout complexity and reduces the amount of chip area required. The data register is formed of a fewer number of transistor components, thereby reducing the loading on the clock signals.
摘要:
A logic gate circuit composed of CMOS transistors includes at least a first pair of transistors formed of first and second transistors of one conductivity type having gate, source and drain electrodes. The logic gate circuit further includes at least a second pair of transistors formed of third and fourth transistors of the same conductivity as the first pair and having gate, source and drain electrodes. The source and drain electrodes of the first and second pairs are adapted to receive input signals. A pair of cross-coupled transistors formed of fifth and sixth transistors of a complementary electrodes are provided. The gate of the fifth transistor is connected to the drain of the sixth transistor, and the gate of the sixth transistor is connected to the drain of the fifth transistor. The drain of the fifth transistor is further connected to the drains of the first and second transistors and to a true output terminal. The drain of the sixth transistor is further connected to the drains of the third and fourth transistors and to a complement output terminal. All of the first through sixth transistors are arranged on an integrated circuit substrate with topological regularity.
摘要:
An array arrangement for EEPROMS in which each memory cell has two transistors. Selection is simplified whereby in selecting a cell all of the cells in the selected row are connected to one terminal of the writing circuit and all the cells in the selected column are connected to the other terminal. This selection process prevents any cell from being written into except the cell at the intersection of the selected row and the selected column.