公开(公告)号：US20210220824A1

公开(公告)日：2021-07-22

申请号：US16755911

申请日：2019-04-16

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ce Ning ,  Xiaochen Ma ,  Hehe Hu ,  Guangcai Yuan ,  Xin Gu

IPC: B01L3/00

Abstract: The present disclosure relates to a micro-channel device. The micro-channel device may include a micro-channel structure and a semiconductor junction. The micro-channel structure may include a base layer, a plurality of rails distributed on the base layer at intervals, and a cover layer comprising a plurality of columns. The cover layer and the base layer are configured to form a plurality of micro-channels. The semiconductor junction may include a P-type semiconductor layer, an intrinsic semiconductor layer and a N-type semiconductor layer stacked in a first direction.

公开(公告)号：US20210217784A1

公开(公告)日：2021-07-15

申请号：US16761335

申请日：2019-11-21

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhengliang Li ,  Jiayu He ,  Hehe Hu ,  Wenlin Zhang ,  Song Liu ,  Xiaochen Ma ,  Nianqi Yao ,  Jie Huang

IPC: H01L27/144

Abstract: An array substrate, a method for manufacturing an array substrate, and a display panel are provided. The array substrate includes: a base substrate; a thin film transistor on the base substrate; and a PIN diode on a side of the thin film transistor away from the base substrate, in a direction running away the base substrate from the thin film transistor, the PIN diode including a first electrical conduction type semiconductor layer and an intrinsic semiconductor layer and a second electrical conduction type semiconductor layer stacked in sequence, wherein a material from which the first electrical conduction type semiconductor layer is made includes one or more of following materials: metal oxide, metal sulfide, metal selenide, metal nitride, metal phosphide, or metal arsenide.

公开(公告)号：US10651212B2

公开(公告)日：2020-05-12

申请号：US16388349

申请日：2019-04-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hehe Hu

IPC: H01L27/32 ,  H01L27/12 ,  H01L21/82 ,  H01L27/02 ,  H01L21/027 ,  H01L21/3213 ,  H01L29/423

Abstract: A thin film transistor array substrate, a method for manufacturing the same and a display device are provided. The TFT array substrate includes: a substrate, and a gate electrode, a common electrode, a gate insulation layer, an active layer, a source electrode and a drain electrode arranged on the substrate. The TFT array substrate further includes: a pixel electrode, arranged on the gate insulation layer, overlapped with and jointed to the drain electrode; a passivation layer, arranged on the gate insulation layer and a channel between the source and drain electrodes; and a common electrode line, arranged on a plane identical to the pixel electrode.

公开(公告)号：US20190267559A1

公开(公告)日：2019-08-29

申请号：US16115009

申请日：2018-08-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Song Liu ,  Yu Wen ,  Jianming Sun ,  Zhengliang Li ,  Xiaochen Ma ,  Hehe Hu ,  Wenlin Zhang ,  Jianhua Du ,  Ce Ning

IPC: H01L51/42 ,  H01L51/44

Abstract: The present disclosure relates to the field of display, in particular to a thin film transistor, a method for preparing the same, and a display device. The thin film transistor of the present disclosure includes a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, a drain electrode, and a photoelectric conversion layer in contact with the gate electrode. The photoelectric conversion layer is configured to generate an induced potential in a light environment.

公开(公告)号：US10108291B2

公开(公告)日：2018-10-23

申请号：US15031257

申请日：2015-08-14

Applicant: BOE TECHNOLOGY GROUP CO., LTD

Inventor： Hehe Hu

IPC: H01L27/00 ,  H01L29/00 ,  G06F3/041 ,  H01L29/66 ,  H01L29/786 ,  G06F3/042 ,  H01L27/12 ,  H01L29/22 ,  H01L29/24 ,  H01L29/16

Abstract: A thin-film transistor is provided. The thin film transistor includes a substrate; an active layer configured as a channel of the thin-film transistor, wherein the active layer is a mixture of oxide semiconductor and graphene; and a source and a drain.