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公开(公告)号：US12041825B2
公开(公告)日：2024-07-16
申请号：US17429935
申请日：2020-11-13
发明人： Jiayu He , Ce Ning , Zhengliang Li , Hehe Hu , Jie Huang , Nianqi Yao , Xue Liu
IPC分类号： H10K59/13 , H10K59/124 , H10K59/126 , H10K59/38 , H10K71/00 , H10K59/12
CPC分类号： H10K59/13 , H10K59/124 , H10K59/126 , H10K59/38 , H10K71/00 , H10K59/1201
摘要： An organic electroluminescent display substrate is provided, which includes a base substrate, and a light-emitting unit and a light-sensing unit arranged on the base substrate, wherein the light-sensing unit is arranged on a light-emitting side of the light-emitting unit, and configured for sensing an intensity of light emitted from the light-emitting unit; a first planarization layer is arranged between the light-sensing unit and the light-emitting unit; the light-sensing unit comprises a first thin film transistor and a photosensitive sensor arranged sequentially in that order in a direction away from the base substrate, and a second planarization layer is arranged between the photosensitive sensor and the first thin film transistor. A display panel, a display device and a method for manufacturing the organic electroluminescent display substrate are further provided.
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公开(公告)号：US11372451B2
公开(公告)日：2022-06-28
申请号：US16900647
申请日：2020-06-12
发明人： Jiayu He , Xue Liu , Hehe Hu , Zhengliang Li
摘要： A display substrate, a display device, and a method of forming a display substrate are provided. The display substrate includes: a flexible base substrate and a plurality of pixel islands arranged on the flexible base substrate, where the plurality of pixel islands are arranged in an array, two adjacent pixel islands are connected through an island bridge, display units are arranged on the pixel islands, the display units on the pixel islands are electrically connected through an inter-island connection line arranged on the island bridge, a region outside the pixel islands and the island bridge is a hollow area, and axes of four island bridges around the hollow area are arranged as a parallelogram.
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公开(公告)号：US12068355B2
公开(公告)日：2024-08-20
申请号：US17410677
申请日：2021-08-24
发明人： Jiayu He , Ce Ning , Zhengliang Li , Hehe Hu , Jie Huang , Nianqi Yao , Kun Zhao
IPC分类号： H01L27/146 , H01L27/12
CPC分类号： H01L27/14643 , H01L27/1214 , H01L27/14689
摘要： An array substrate includes a substrate, the array substrate includes a display region and a detection region. And the detection region includes a thin film transistor located on the substrate and a photodiode located on one side of the thin film transistor away from the substrate, and the array substrate further includes a first inorganic protective layer, an organic protective layer and a second inorganic protective layer located between the thin film transistor and the photodiode. And the first inorganic protective layer, the organic protective layer and the second inorganic protective layer are stacked in sequence in a direction away from the substrate, and an orthographic projection of the photodiode on the substrate is within the range of the orthographic projection of the organic protective layer on the substrate.
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4.发明申请公开(公告)号：US20230091604A1
公开(公告)日：2023-03-23
申请号：US17611156
申请日：2021-01-28
发明人： Jie Huang , Jiayu He , Ce Ning , Zhengliang Li , Hehe Hu , Fengjuan Liu , Nianqi Yao , Kun Zhao , Tianmin Zhou , Jiushi Wang , Zhongpeng Tian
IPC分类号： H01L29/786 , H01L27/12 , H01L29/66
摘要： The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the channel layer include tin, and at least one of indium, gallium and zinc. The first protection layer includes praseodymium used to absorb photo-generated electrons from at least one of the channel layer and the first protection layer which is under light irradiation and reduce a photo-generated current caused by the light irradiation.
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5.发明申请公开(公告)号：US20230015871A1
公开(公告)日：2023-01-19
申请号：US17780877
申请日：2021-05-27
发明人： Jie Huang , Ce Ning , Zhengliang Li , Hehe Hu , Jiayu He , Nianqi Yao , Feng Qu , Xiaochun Xu
IPC分类号： H01L29/786 , H01L27/12
摘要： A thin film transistor, a manufacturing method thereof, an array substrate and an electronic device arc provided. The thin film transistor includes an active layer including multiple oxide layers which includes a channel layer, a transition layer and a first barrier layer, the channel layer is an layer with a highest carrier mobility, the channel layer is a crystalline or amorphous oxide layer, the transition layer is in direct contact with the channel layer, the first barrier layer is an outermost oxide layer, the first barrier layer and the transition layer are both crystalline oxide layers; a crystallization degree of the first barrier layer and a crystallization degree of the transition layer are greater than a crystallization degree of the channel layer, and a band gap of the first barrier layer and a band gap of the transition layer are larger than a band gap of the channel layer.
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公开(公告)号：US20210217784A1
公开(公告)日：2021-07-15
申请号：US16761335
申请日：2019-11-21
发明人： Zhengliang Li , Jiayu He , Hehe Hu , Wenlin Zhang , Song Liu , Xiaochen Ma , Nianqi Yao , Jie Huang
IPC分类号： H01L27/144
摘要： An array substrate, a method for manufacturing an array substrate, and a display panel are provided. The array substrate includes: a base substrate; a thin film transistor on the base substrate; and a PIN diode on a side of the thin film transistor away from the base substrate, in a direction running away the base substrate from the thin film transistor, the PIN diode including a first electrical conduction type semiconductor layer and an intrinsic semiconductor layer and a second electrical conduction type semiconductor layer stacked in sequence, wherein a material from which the first electrical conduction type semiconductor layer is made includes one or more of following materials: metal oxide, metal sulfide, metal selenide, metal nitride, metal phosphide, or metal arsenide.
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公开(公告)号：US20240261785A1
公开(公告)日：2024-08-08
申请号：US18018795
申请日：2021-12-31
发明人： Feifei Li , Bolin Fan , Ce Ning , Zhengliang Li , Hehe Hu , Nianqi Yao , Jiayu He , Jie Huang , Kun Zhao
IPC分类号： B01L3/00
CPC分类号： B01L3/502761 , B01L2200/0647 , B01L2200/12 , B01L2300/0645 , B01L2300/0848 , B01L2400/0415
摘要： Provided is a micro-nano fluidic substrate, a chip, a preparation method, and a system. The micro-nano fluidic substrate includes: a base; an electrode layer located on the base, the electrode layer includes a first electrode, a second electrode, and a control electrode; and a film layer located on the electrode layer and far away from the base, the film layer includes a groove layer, a nano-channel and a micro-channel, the groove layer includes a first groove, the nano-channel is located in the first groove, an orthographic projection of the nano-channel on the base at least partially coincides with an orthographic projection of the control electrode on the base, and the micro-channel is in communication with the nano-channel, the micro-channel includes a first micro-channel and a second micro-channel, and the first micro-channel is in communication with the first electrode, the second micro-channel is in communication with the second electrode.
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8.发明公开公开(公告)号：US20240186379A1
公开(公告)日：2024-06-06
申请号：US17798347
申请日：2021-10-22
发明人： Hehe Hu , Fengjuan Liu , Guangcai Yuan , Jiayu He , Ce Ning , Zhengliang Li , Kun Zhao
IPC分类号： H01L29/10 , H01L21/385 , H01L29/24 , H01L29/66 , H01L29/786
CPC分类号： H01L29/1041 , H01L21/385 , H01L29/24 , H01L29/66969 , H01L29/7869
摘要： Provided is a method for manufacturing a metal-oxide thin-film transistor (TFT). The method includes: forming, on a base substrate, an active layer including a metal oxide semiconductor, and a functional layer laminated on the active layer and containing a lanthanide element; and annealing the active layer and the functional layer, such that the lanthanide element in the functional layer is diffused into the active layer.
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公开(公告)号：US20230006070A1
公开(公告)日：2023-01-05
申请号：US17782035
申请日：2021-05-27
发明人： Jie Huang , Ce Ning , Zhengliang Li , Hehe Hu , Jiayu He , Nianqi Yao , Kun Zhao , Feng Qu , Xiaochun Xu
IPC分类号： H01L29/786 , H01L29/66 , H01L27/12
摘要： A semiconductor substrate manufacturing method and a semiconductor substrate. The manufacturing method includes: forming a first semiconductor layer on the base substrate at a first temperature with a first oxide semiconductor material; forming the second semiconductor layer directly on the first semiconductor layer with a second oxide semiconductor material; and performing a patterning process such that the first semiconductor layer and the second semiconductor layer are respectively patterned into a seed layer and a first channel layer. Both the first oxide semiconductor material and the second oxide semiconductor material are capable of forming crystalline phases at a second temperature, the second temperature is less than or equal to 40° C., and the first temperature is greater than or equal to 100° C.
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公开(公告)号：US11508786B2
公开(公告)日：2022-11-22
申请号：US16835722
申请日：2020-03-31
发明人： Jiayu He , Xue Liu , Zhengliang Li
IPC分类号： H01L27/32 , H01L31/105 , H01L31/18 , H01L27/12
摘要： The disclosure provides a display backplane, a method of manufacturing the same, and a display device using the same. The display backplane includes a substrate; a thin film transistor structure layer disposed on one side of the substrate and including thin film transistors, a gate insulating layer, and an interlayer dielectric layer, where an etching rate of the interlayer dielectric layer carried out under an HF atmosphere condition is less than 2 Å/S; and photosensitive devices spaced apart from the thin film transistor structure layer and disposed on one side of the thin film transistor structure layer away from the substrate. The interlayer dielectric layer has a high compactness, and can effectively block H from entering the active layer of the thin film transistor to conductorize the active layer, thus guaranteeing good optical characteristics of the thin film transistor while carrying out optical compensation.
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