FRICTION ELECTRIC GENERATOR AND MANUFACTURING METHOD THEREOF
    51.
    发明申请
    FRICTION ELECTRIC GENERATOR AND MANUFACTURING METHOD THEREOF 审中-公开
    摩擦电力发电机及其制造方法

    公开(公告)号:US20170063257A1

    公开(公告)日:2017-03-02

    申请号:US15134895

    申请日:2016-04-21

    CPC classification number: H02N1/04

    Abstract: A friction electric generator and a manufacturing method thereof are provided. The friction electric generator includes a first substrate and a second substrate disposed oppositely, a first electrode and a polymer insulating layer sequentially formed on a side of the first substrate facing the second substrate; a second electrode formed on a side of the second substrate facing the first substrate; wherein, the first electrode and the second electrode are each made of a flexible conductive substance, the first substrate and the second substrate are each made of a flexible insulating substance, and the polymer insulating layer and the second electrode is capable of generating electricity by friction.

    Abstract translation: 提供了一种摩擦发电机及其制造方法。 摩擦发电机包括第一基板和相对设置的第二基板,第一电极和聚合物绝缘层,其顺序地形成在面向第二基板的第一基板的一侧上; 形成在所述第二基板的面向所述第一基板的一侧上的第二电极; 其特征在于,所述第一电极和所述第二电极各自由柔性导电性物质构成,所述第一基板和所述第二基板各自由柔性绝缘物质构成,所述聚合物绝缘层和所述第二电极能够通过摩擦发电 。

    A PIXEL STRUCTURE AND A PREPARATION METHOD THEREOF, A PIXEL DISPLAY METHOD AND AN ARRAY SUBSTRATE
    52.
    发明申请
    A PIXEL STRUCTURE AND A PREPARATION METHOD THEREOF, A PIXEL DISPLAY METHOD AND AN ARRAY SUBSTRATE 审中-公开
    像素结构及其制备方法,像素显示方法和阵列基板

    公开(公告)号:US20160358539A1

    公开(公告)日:2016-12-08

    申请号:US14892521

    申请日:2015-04-14

    Abstract: The present disclosure discloses a pixel structure and a preparation method thereof, a pixel display method and an array substrate. The pixel structure comprises: a thin film transistor TFT for controlling a Micro-Electro-Mechanical System MEMS switch; the Micro-Electro-Mechanical System MEMS switch being used for controlling transmission amount of outgoing light of a quantum dot light emitting diode QLED device; the quantum dot light emitting diode QLED device being a top emission type for emitting light constantly based on a constant light emitting driving signal.

    Abstract translation: 本公开公开了一种像素结构及其制备方法,像素显示方法和阵列基板。 像素结构包括:用于控制微机电系统MEMS开关的薄膜晶体管TFT; 微机电系统MEMS开关用于控制量子点发光二极管QLED器件的出射光的传输量; 量子点发光二极管QLED器件是用于基于恒定的发光驱动信号恒定地发光的顶部发射型。

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