公开(公告)号：US07659150B1

公开(公告)日：2010-02-09

申请号：US11716156

申请日：2007-03-09

Applicant: Pezhman Monadgemi ,  Roger T. Howe ,  Emmanuel P. Quevy

Inventor： Pezhman Monadgemi ,  Roger T. Howe ,  Emmanuel P. Quevy

IPC: H01L21/00

CPC classification number: H01L23/10 ,  B81B2207/012 ,  B81C1/00293 ,  B81C2203/0136 ,  B81C2203/0145 ,  H01L23/26 ,  H01L2924/0002 ,  H01L2924/13091 ,  H01L2924/3011 ,  H01L2924/00

Abstract: Microshells for encapsulation of devices such as MEMS and microelectronics. In an embodiment, the microshells include a planar perforated pre-sealing layer, below which a non-planar sacrificial layer is accessed, and a sealing layer to close the perforation in the pre-sealing layer after the sacrificial material is removed. The sealing layer may include a nonhermetic layer to physically occlude the perforation and a hermetic layer over the nonhermetic occluding layer to seal the perforation as a function of the dimension of the perforation to form cavities having different vacuum levels on the same substrate.

Abstract translation: 用于封装MEMS和微电子等器件的微型外壳。 在一个实施例中，微壳包括平面穿孔的预密封层，在其下面存取非平面牺牲层，以及密封层，用于在去除牺牲材料之后封闭预密封层中的穿孔。 密封层可以包括非密封层，以物理地闭塞穿孔，并且在非密封闭塞层上方形成密封层，以密封穿孔，作为穿孔尺寸的函数，以在同一基底上形成具有不同真空度的空腔。

公开(公告)号：US07639104B1

公开(公告)日：2009-12-29

申请号：US11716115

申请日：2007-03-09

Applicant: Emmanuel P. Quevy ,  David H. Bernstein

Inventor： Emmanuel P. Quevy ,  David H. Bernstein

IPC: H03H9/00

CPC classification number: B81C1/0069 ,  B81C1/00349 ,  B81C1/00523 ,  G02B6/358 ,  H03H3/0076 ,  H03H9/2405 ,  H03H9/2457 ,  H03H2009/02496 ,  H03H2009/2442 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49165

Abstract: MEMS resonators containing a first material and a second material to tailor the resonator's temperature coefficient of frequency (TCF). The first material has a different Young's modulus temperature coefficient than the second material. In one embodiment, the first material has a negative Young's modulus temperature coefficient and the second material has a positive Young's modulus temperature coefficient. In one such embodiment, the first material is a semiconductor and the second material is a dielectric. In a further embodiment, the quantity and location of the second material in the resonator is tailored to meet the resonator TCF specifications for a particular application. In an embodiment, the second material is isolated to a region of the resonator proximate to a point of maximum stress within the resonator. In a particular embodiment, the resonator includes a first material with a trench containing the second material. In a specific embodiment, the shape, dimensions, location and arrangement of a second material comprising silicon dioxide is tailored so that the resonator comprising a first material of SiGe will have a TCF of a much lower magnitude than that of either a homogeneous SiGe or homogeneous silicon dioxide resonator.

Abstract translation: 包含第一材料和第二材料的MEMS谐振器以调整谐振器的频率温度系数（TCF）。 第一种材料具有与第二种材料不同的杨氏模量温度系数。 在一个实施例中，第一材料具有负杨氏模量温度系数，第二材料具有正的杨氏模量温度系数。 在一个这样的实施例中，第一材料是半导体，第二材料是电介质。 在另一实施例中，谐振器中的第二材料的数量和位置被调整为满足特定应用的谐振器TCF规格。 在一个实施例中，第二材料被隔离到谐振器附近的最大应力点处的谐振器的区域。 在特定实施例中，谐振器包括具有包含第二材料的沟槽的第一材料。 在具体实施例中，包括二氧化硅的第二材料的形状，尺寸，位置和布置被定制，使得包括SiGe的第一材料的谐振器将具有比均匀SiGe或均质SiGe的TCF低得多的TCF 二氧化硅谐振器。

公开(公告)号：US07595209B1

公开(公告)日：2009-09-29

申请号：US11716233

申请日：2007-03-09

Applicant: Pezhman Monadgemi ,  Emmanuel P. Quevy ,  Roger T. Howe

Inventor： Pezhman Monadgemi ,  Emmanuel P. Quevy ,  Roger T. Howe

IPC: H01L21/56 ,  H01L21/50

CPC classification number: B81C1/0023 ,  B81B7/0054 ,  B81C2201/0167 ,  B81C2203/0136 ,  B81C2203/0145 ,  H01L21/568 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: Multi-layered, planar microshells having low stress for encapsulation of devices such as MEMS and microelectronics. The microshells may include a perforated pre-sealing layer, below which a sacrificial layer is accessed, and a sealing layer to close the perforation in the pre-sealing layer after the sacrificial material is removed. The sealing layer may further include a nonhermetic layer to physically occlude the perforation and a hermetic layer over the nonhermetic occluding layer to seal the perforation. The various layers may be formed employing processes having opposing stresses to tune the residual stress of the multi-layered microshell. In an embodiment, the hermetic layer is a metal which is deposited with a process tuned to impart a tensile stress to lower the residual stress in the microshell below the magnitude of cumulative stress present in sealing layer and pre-sealing layer.

Abstract translation: 具有低应力的多层平面微壳体，用于诸如MEMS和微电子器件的封装。 微壳可以包括穿孔的预密封层，在其下方存取牺牲层，以及密封层，用于在去除牺牲材料之后封闭预密封层中的穿孔。 密封层还可以包括非密封层，以物理地封闭穿孔，并且在非密封闭塞层上方形成密封层以密封穿孔。 可以使用具有相反应力的工艺来形成各个层，以调节多层微壳的残余应力。 在一个实施例中，密封层是金属，其沉积有被调整以赋予拉伸应力的工艺，以将微壳中的残余应力降低到低于存在于密封层和预密封层中的累积应力的大小。

公开(公告)号：US07256107B2

公开(公告)日：2007-08-14

申请号：US11121690

申请日：2005-05-03

Applicant: Hideki Takeuchi ,  Emmanuel P. Quevy ,  Tsu-Jae King ,  Roger T. Howe

Inventor： Hideki Takeuchi ,  Emmanuel P. Quevy ,  Tsu-Jae King ,  Roger T. Howe

IPC: H01L21/46 ,  H01L21/78 ,  H01L21/301

CPC classification number: B81C1/00142 ,  B81B2201/0271 ,  B81C2201/0109 ,  Y10S438/933

Abstract: In fabricating a microelectromechanical structure (MEMS), a method of forming a narrow gap in the MEMS includes a) depositing a layer of sacrificial material on the surface of a supporting substrate, b) photoresist masking and at least partially etching the sacrificial material to form at least one blade of sacrificial material, c) depositing a structural layer over the sacrificial layer, and d) removing the sacrificial layer including the blade of the sacrificial material with a narrow gap remaining in the structural layer where the blade of sacrificial material was removed.

Abstract translation: 在制造微机电结构（MEMS）中，在MEMS中形成窄间隙的方法包括：a）在支撑衬底的表面上沉积牺牲材料层，b）光致抗蚀剂掩模并且至少部分蚀刻牺牲材料以形成 至少一个牺牲材料刀片，c）在所述牺牲层上沉积结构层，以及d）去除包括所述牺牲材料刀片的所述牺牲层，其中所述牺牲材料刀片被去除的所述结构层中残留有窄间隙 。

公开(公告)号：US07211926B2

公开(公告)日：2007-05-01

申请号：US11361814

申请日：2006-02-23

Applicant: Emmanuel P. Quevy ,  Roger T. Howe

Inventor： Emmanuel P. Quevy ,  Roger T. Howe

IPC: H03B28/00 ,  H03B5/04

CPC classification number: G01K7/32 ,  G04G3/04 ,  H03H9/02448 ,  H03H9/2473 ,  H03H2009/02496

Abstract: Disclosed is an oscillator that relies on redundancy of similar resonators integrated on chip in order to fulfill the requirement of one single quartz resonator. The immediate benefit of that approach compared to quartz technology is the monolithic integration of the reference signal function, implying smaller devices as well as cost and power savings.

Abstract translation: 公开了一种振荡器，其依赖于集成在芯片上的类似谐振器的冗余，以满足一个单个石英谐振器的要求。 与石英技术相比，该方法的直接好处是参考信号功能的单一集成，意味着较小的器件以及成本和功率节省。