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公开(公告)号：US09103451B2
公开(公告)日：2015-08-11
申请号：US12450605
申请日：2008-04-04
申请人： Junichi Kitano , Takashi Wada , Kenji Kusunoki
发明人： Junichi Kitano , Takashi Wada , Kenji Kusunoki
CPC分类号： F16K7/068
摘要： A device for stopping a flow of fluid in a fixed length of tube with an actuator simple in construction is provided. The stopping device is free of direct touch with the fluid inside the tube, expected not to obstruct the flow in the tube as permitted as possible at normal condition, expected to perform both detection and control with a single device, and further invulnerable to kinds of fluids. The device for stopping a flow of fluid includes a tube holder to keep a tube in looped configuration, a movable part pressing the looped configuration of the tube. Pressing of the looped configuration of the tube make a snapped bent to stop the flow of fluid passed through the tube. Putting the movable part back into place results in the tube's returning from the configuration having the bent, allowing the fluid flowing again through the tube.
摘要翻译： 提供一种用于在构造简单的致动器中停止固定长度的管中的流体流动的装置。 止动装置与管内的流体无直接接触，预期在正常状态下尽可能允许阻止管中的流动，预期用单个装置进行检测和控制，并且进一步不易受到各种 流体。 用于停止流体流动的装置包括管保持器以将管保持为环形构造，可动部分压缩管的环形构造。 按压管的环形构造使得卡扣弯曲以停止通过管的流体的流动。 将可移动部分放回原位导致管从具有弯曲的构造返回，允许流体再次流过管。
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公开(公告)号：USD732326S1
公开(公告)日：2015-06-23
申请号：US29463507
申请日：2013-12-16
申请人： Junichi Kitano , Kenji Kato , Teruhiko Kitamura
设计人： Junichi Kitano , Kenji Kato , Teruhiko Kitamura
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公开(公告)号：USD731838S1
公开(公告)日：2015-06-16
申请号：US29463508
申请日：2013-12-16
申请人： Junichi Kitano , Kenji Kato , Teruhiko Kitamura
设计人： Junichi Kitano , Kenji Kato , Teruhiko Kitamura
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公开(公告)号：US07794924B2
公开(公告)日：2010-09-14
申请号：US11898694
申请日：2007-09-14
申请人： Yuko Ono , Junichi Kitano
发明人： Yuko Ono , Junichi Kitano
IPC分类号： G03F7/26
CPC分类号： G03D5/00 , G03F7/3028 , G03F7/322 , Y10S134/902
摘要： In a developing method for performing developing treatment of a substrate by supplying a developing solution onto a resist film formed on a surface of the substrate, the present invention controls a zeta potential of the surface of the substrate at a predetermined potential in the same polarity as that of a zeta potential of insoluble substances floating in the developing solution, thereby preventing or reducing the adhesion of the insoluble substances to the resist film and the substrate. This remedies the occurrence of development defects. The adhesion of the insoluble substances to the resist film and the substrate can also be prevented or inhibited by supplying an acid liquid to a liquid on the substrate, or controlling a pH value of the liquid on the substrate to control an absolute value of the zeta potential of the insoluble substances.
摘要翻译： 在通过将显影液供给到形成在基板的表面上的抗蚀剂膜上的基板进行显影处理的显影方法中，本发明将基板表面的ζ电位控制在与 不溶物质的ζ电位漂浮在显影液中，从而防止或降低不溶物质对抗蚀剂膜和基材的粘附。 这样可以弥补发展缺陷的发生。 还可以通过向基板上的液体供给酸性液体，或者控制基板上的液体的pH值来控制ζ的绝对值，从而可以防止或抑制不溶性物质与抗蚀剂膜和基材的粘附 潜在的不溶物质。
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公开(公告)号：US07427168B2
公开(公告)日：2008-09-23
申请号：US11898693
申请日：2007-09-14
申请人： Yuko Ono , Junichi Kitano
发明人： Yuko Ono , Junichi Kitano
IPC分类号： G03D5/00 , C25F3/04 , B08B3/02 , H01L21/302
CPC分类号： G03D5/00 , G03F7/3028 , G03F7/322 , Y10S134/902
摘要： In a developing method for performing developing treatment of a substrate by supplying a developing solution onto a resist film formed on a surface of the substrate, the present invention controls a zeta potential of the surface of the substrate at a predetermined potential in the same polarity as that of a zeta potential of insoluble substances floating in the developing solution, thereby preventing or reducing the adhesion of the insoluble substances to the resist film and the substrate. This remedies the occurrence of development defects. The adhesion of the insoluble substances to the resist film and the substrate can also be prevented or inhibited by supplying an acid liquid to a liquid on the substrate, or controlling a pH value of the liquid on the substrate to control an absolute value of the zeta potential of the insoluble substances.
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公开(公告)号：US20080013946A1
公开(公告)日：2008-01-17
申请号：US11898693
申请日：2007-09-14
申请人： Yuko Ono , Junichi Kitano
发明人： Yuko Ono , Junichi Kitano
CPC分类号： G03D5/00 , G03F7/3028 , G03F7/322 , Y10S134/902
摘要： In a developing method for performing developing treatment of a substrate by supplying a developing solution onto a resist film formed on a surface of the substrate, the present invention controls a zeta potential of the surface of the substrate at a predetermined potential in the same polarity as that of a zeta potential of insoluble substances floating in the developing solution, thereby preventing or reducing the adhesion of the insoluble substances to the resist film and the substrate. This remedies the occurrence of development defects. The adhesion of the insoluble substances to the resist film and the substrate can also be prevented or inhibited by supplying an acid liquid to a liquid on the substrate, or controlling a pH value of the liquid on the substrate to control an absolute value of the zeta potential of the insoluble substances.
摘要翻译： 在通过将显影液供给到形成在基板的表面上的抗蚀剂膜上的基板进行显影处理的显影方法中，本发明将基板表面的ζ电位控制在与 不溶物质的ζ电位漂浮在显影液中，从而防止或降低不溶物质对抗蚀剂膜和基材的粘附。 这样可以弥补发展缺陷的发生。 还可以通过向基板上的液体供给酸性液体，或者控制基板上的液体的pH值来控制ζ的绝对值，从而可以防止或抑制不溶性物质与抗蚀剂膜和基材的粘附 不溶物质的潜力。
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公开(公告)号：US06884298B2
公开(公告)日：2005-04-26
申请号：US10309273
申请日：2002-12-04
CPC分类号： G03F7/168
摘要： A coating and developing treatment system for performing coating and developing treatment. A coating treatment unit is configured to form a resist film on a substrate. A developing treatment unit is configured to develop the substrate. A heating/cooling unit includes a heat plate configured to continuously heat and a cooling plate configured to continuously cool in one casing the substrate on which the resist film has been formed by the coating treatment unit. A gas nozzle is configured to supply a treatment gas to the resist film formed on the substrate to form a protective film on a surface of the resist film. The gas nozzle is disposed on a cooling plate side in the heating/cooling unit. The gas nozzle is configured to move to a position above the substrate on the cooling plate during cooling at the cooling plate, to supply the treatment gas.
摘要翻译： 一种用于进行涂层和显影处理的涂层和显影处理系统。 涂布处理单元构造成在基板上形成抗蚀剂膜。 显影处理单元构造成显影基板。 加热/冷却单元包括被配置为连续加热的加热板和构造成在一个壳体中连续地冷却由涂覆处理单元形成有抗蚀剂膜的基板的冷却板。 气体喷嘴被构造成将处理气体供给到形成在基板上的抗蚀剂膜，以在抗蚀剂膜的表面上形成保护膜。 气体喷嘴设置在加热/冷却单元中的冷却板侧。 气体喷嘴构造成在冷却板冷却期间移动到冷却板上的基板上方的位置，以供应处理气体。
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公开(公告)号：US06632281B2
公开(公告)日：2003-10-14
申请号：US09772923
申请日：2001-01-31
申请人： Junichi Kitano , Yuji Matsuyama
发明人： Junichi Kitano , Yuji Matsuyama
IPC分类号： B05C1108
CPC分类号： H01L21/67178 , G03F7/70991 , H01L21/67017 , H01L21/6715 , H01L21/67161 , H01L21/67184 , H01L21/67742 , H01L21/67778 , Y10T29/41
摘要： On top of respective areas divided by partition plates, that is, a cassette station, a processing station, and an interface section in a coating and developing processing system, gas supply sections for supplying an inert gas into the respective areas are provided. Exhaust pipes for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes.
摘要翻译： 在涂覆和显影处理系统中由分隔板，即盒式磁带站，加工站和界面部分划分的各个区域之上，提供用于向各个区域供应惰性气体的气体供应部分。 在各个区域的底部设置用于各区域的排气的排气管。 通过将不含杂质的惰性气体（例如氧气和细颗粒）从各个气体供给区域供给到各个区域并排出排气管的各个区域中的气氛，将各个区域中的气氛保持在清洁状态。 / PTEXT>
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公开(公告)号：US06620248B2
公开(公告)日：2003-09-16
申请号：US09820938
申请日：2001-03-30
申请人： Takahiro Kitano , Yuji Matsuyama , Junichi Kitano , Hiroyuki Hara
发明人： Takahiro Kitano , Yuji Matsuyama , Junichi Kitano , Hiroyuki Hara
IPC分类号： B05C1110
CPC分类号： H01L21/6715
摘要： In a coating apparatus for supplying a mixed solution of a resist solution and a thinner onto a wafer from a nozzle, the nozzle is connected to a mixed solution supply pipe, and the resist solution and the thinner are supplied to the mixed solution supply pipe from a resist solution supply pipe and a thinner supply pipe respectively through a junction pipe. The diameter of the junction pipe is set smaller than those of other supply pipes, whereby the resist solution and the thinner can be mixed efficiently in the junction pipe, and as a result the wafer is coated with the mixed solution so that a uniform film thickness can be obtained within the surface of the wafer.
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公开(公告)号：US06518199B2
公开(公告)日：2003-02-11
申请号：US09851134
申请日：2001-05-09
IPC分类号： H01L2131
CPC分类号： G03F7/168
摘要： The present invention relates to a method for performing coating and developing treatment for a substrate, which comprises the steps of: supplying a coating solution to the substrate to form a coating film on the substrate; performing heat treatment for the substrate on which the coating film is formed; cooling the substrate after the heat treatment; performing exposure processing for the coating film formed on the substrate; and developing the substrate after the exposure processing, and further comprises the step of supplying a treatment gas to form a treatment film on a surface of the coating film after the step of forming the coating film and before the step of performing the exposure processing for the substrate. According to the present invention, the treatment gas is supplied to form the treatment film on the surface of the coating film after the step of forming: the coating film and before the step of exposing the substrate, whereby the substrate can be protected from impurities such as oxygen and water vapor in an atmosphere by this treatment film.
摘要翻译： 本发明涉及对基材进行涂布和显影处理的方法，其特征在于包括以下步骤：向所述基材供给涂布溶液以在所述基材上形成涂膜; 对其上形成有涂膜的基板进行热处理; 热处理后冷却基板; 对形成在基板上的涂膜进行曝光处理; 并且在曝光处理之后显影衬底，并且还包括在形成涂膜的步骤之后并且在进行曝光处理的步骤之前，在涂膜的表面上提供处理气体以形成处理膜的步骤 基质。 根据本发明，在形成：涂膜的步骤和暴露基板的步骤之前，供给处理气体以在涂膜的表面上形成处理膜，从而可以保护基板免受杂质 作为该处理膜在大气中的氧气和水蒸汽。
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