Method of manufacturing inkjet printhead
    51.
    发明授权
    Method of manufacturing inkjet printhead 有权
    制造喷墨打印头的方法

    公开(公告)号:US08216482B2

    公开(公告)日:2012-07-10

    申请号:US12428808

    申请日:2009-04-23

    摘要: A method of manufacturing an inkjet printhead includes forming a chamber layer having multiple ink chambers on a substrate. A sacrificial layer is formed and is configured to fill a space associated with the ink chambers on the chamber layer. A nozzle layer is formed on the top surfaces of the chamber layer and the sacrificial layer and having multiple nozzles. An etching mask is prepared on the bottom surface of the substrate. The etching mask has at least one linear etching pattern configured to define a portion of the substrate in which an ink feed hole is to be formed. The substrate is etched through the linear etching pattern until the sacrificial layer is exposed and a through hole is formed. The through hole defines the portion of the substrate in which the ink feed hole is to be formed. The sacrificial layer and the portion of the substrate surrounded by the through hole are removed to form the ink feed hole.

    摘要翻译: 制造喷墨打印头的方法包括在基板上形成具有多个墨室的腔层。 牺牲层被形成并被配置成填充与腔室层上的墨水室相关联的空间。 喷嘴层形成在腔室层和牺牲层的顶表面上并且具有多个喷嘴。 在基板的底表面上制备蚀刻掩模。 蚀刻掩模具有至少一个线性蚀刻图案,其被配置为限定要在其中形成供墨孔的基板的一部分。 通过线性蚀刻图案蚀刻衬底,直到牺牲层被暴露并形成通孔。 通孔限定要在其中形成供墨孔的基板部分。 牺牲层和由通孔包围的基板的部分被去除以形成供墨孔。

    Thermal inkjet printhead
    52.
    发明授权
    Thermal inkjet printhead 有权
    热喷墨打印头

    公开(公告)号:US07959265B2

    公开(公告)日:2011-06-14

    申请号:US11483721

    申请日:2006-07-11

    IPC分类号: B41J2/045 B41J2/015

    CPC分类号: B41J2/14129 B41J2/1408

    摘要: Provided is a thermal inkjet printhead. The inkjet printhead includes a substrate; an insulating layer formed on the substrate; a heater formed on the insulating layer and an electrode to apply current to the heater; a chamber layer that is stacked on the insulating layer and includes an ink chamber; a nozzle layer that is stacked on the chamber layer and includes a nozzle; and at least a heat transfer layer that is formed inside the insulating layer and dissipates heat generated in by the heater toward the substrate.

    摘要翻译: 提供了热喷墨打印头。 喷墨打印头包括基板; 形成在所述基板上的绝缘层; 形成在绝缘层上的加热器和用于向加热器施加电流的电极; 层叠在所述绝缘层上并且包括墨水室的室层; 喷嘴层,其层叠在所述室层上并且包括喷嘴; 以及形成在所述绝缘层内部的至少一层传热层,并且将由所述加热器产生的热量散发到所述基板。

    Schottky diode having low breakdown voltage and method for fabricating the same
    53.
    发明授权
    Schottky diode having low breakdown voltage and method for fabricating the same 有权
    具有低击穿电压的肖特基二极管及其制造方法

    公开(公告)号:US07893442B2

    公开(公告)日:2011-02-22

    申请号:US11702489

    申请日:2007-02-06

    CPC分类号: H01L29/872 H01L29/417

    摘要: Provided are a schottky diode having an appropriate low breakdown voltage to be used in a radio frequency identification (RFID) tag and a method for fabricating the same. The schottky diode includes a silicon substrate having a structure in which an N-type well is formed on a P-type substrate, an insulating layer surrounding a circumference of the N-type well so as to electrically separate the N-type well from the P-type substrate, an N+ doping layer partly formed in a portion of a region of an upper surface of the N-type well, an N− doping layer partly formed in the other portion of a region of the upper surface of the N-type well, a cathode formed on the N+ doping layer, and an anode formed on the N− doping layer.

    摘要翻译: 提供了在射频识别(RFID)标签中使用具有适当的低击穿电压的肖特基二极管及其制造方法。 肖特基二极管包括具有在P型衬底上形成N型阱的结构的硅衬底,围绕N型阱的周围的绝缘层,以将N型阱与 P型衬底,部分地形成在N型阱的上表面的一部分区域中的N +掺杂层,部分地形成在N型阱的上表面的区域的另一部分中的N掺杂层, 类型良好,形成在N +掺杂层上的阴极和形成在N掺杂层上的阳极。

    Film bulk acoustic resonator and a method for manufacturing the same
    55.
    发明授权
    Film bulk acoustic resonator and a method for manufacturing the same 有权
    薄膜体声波谐振器及其制造方法

    公开(公告)号:US07619492B2

    公开(公告)日:2009-11-17

    申请号:US11324303

    申请日:2006-01-04

    IPC分类号: H03H9/54 H01L41/22

    CPC分类号: H03H3/02 H03H9/174 Y10T29/42

    摘要: A film bulk acoustic resonator (FBAR) including a substrate having an etched air gap therethrough; a resonance part having a first electrode, a piezoelectric film and a second electrode which are laminated in turn above the air gap; and an etching resistance layer disposed between the air gap and the resonance part to limit an etching depth in forming the air gap, thereby preventing damage to the resonance part.

    摘要翻译: 一种薄膜体声波谐振器(FBAR),包括具有穿过其中的蚀刻气隙的基板; 具有第一电极,压电膜和第二电极的共振部分,其依次层叠在气隙上方; 以及设置在气隙和谐振部件之间的耐蚀刻层,以限制形成气隙的蚀刻深度,从而防止对共振部件的损坏。

    Inductor fabricated with dry film resist and cavity and method of fabricating the inductor
    56.
    发明授权
    Inductor fabricated with dry film resist and cavity and method of fabricating the inductor 有权
    用干膜抗蚀剂和腔体制造的电感器和制造电感器的方法

    公开(公告)号:US07612428B2

    公开(公告)日:2009-11-03

    申请号:US11291894

    申请日:2005-12-02

    IPC分类号: H01L29/00

    摘要: An inductor fabricated with a dry film resist and a cavity and a method of fabricating the inductor. The cavity can be formed in a substrate to minimize a parasitic capacitance generated by structures of upper electrodes, an insulating layer, and a lower electrode and minimize energy loss caused by an eddy current generated through the substrate. Also, a process of forming and planarizing the cavity can be simplified so as to form the cavity to a sufficient depth. As a result, an inductor having a high quality factor and a high self resonant frequency can be fabricated. Also, a scheme for simply forming and planarizing a cavity is contemplated.

    摘要翻译: 用干膜抗蚀剂和空腔制造的电感器和制造电感器的方法。 空腔可以形成在衬底中以最小化由上电极,绝缘层和下电极的结构产生的寄生电容,并且使由通过衬底产生的涡流引起的能量损失最小化。 此外,可以简化形成和平坦化空腔的过程,以便将空腔形成为足够的深度。 结果,可以制造具有高品质因数和高自谐振频率的电感器。 此外,可以想到简单地形成和平坦化空腔的方案。

    Slim optical pickup
    57.
    发明授权
    Slim optical pickup 失效
    超薄光学拾音器

    公开(公告)号:US07471595B2

    公开(公告)日:2008-12-30

    申请号:US10960924

    申请日:2004-10-12

    IPC分类号: G11B7/12

    摘要: A slim optical pickup in which a leaf spring is combined with an upper surface of a semiconductor substrate, which is a silicon optical bench (SiOB) monolithically manufactured with a photodetector. The slim optical pickup has a substrate including a light source for generating a light beam, an optical element to irradiate light to an optical disc, a photodetector for receiving a light beam reflected by the optical disc, and a plurality of first bonding pads; a heat sink attached to the surface of the substrate; and a supporting means having a plurality of second bonding pads formed on an inner side of an array of the plurality of the first bonding pads on the substrate.

    摘要翻译: 一种薄型光学拾取器,其中板簧与半导体衬底的上表面组合,半导体衬底是用光电检测器单片制造的硅光学台架(SiOB)。 薄型光学拾取器具有包括用于产生光束的光源的基板,向光盘照射光的光学元件,用于接收由光盘反射的光束的光电检测器和多个第一接合焊盘; 连接到基板表面的散热片; 以及支撑装置,其具有形成在所述基板上的所述多个所述第一接合焊盘的阵列的内侧上的多个第二接合焊盘。

    Schottky diode having low breakdown voltage and method for fabricating the same
    58.
    发明申请
    Schottky diode having low breakdown voltage and method for fabricating the same 有权
    具有低击穿电压的肖特基二极管及其制造方法

    公开(公告)号:US20070278608A1

    公开(公告)日:2007-12-06

    申请号:US11702489

    申请日:2007-02-06

    IPC分类号: H01L29/861 H01L21/44

    CPC分类号: H01L29/872 H01L29/417

    摘要: Provided are a schottky diode having an appropriate low breakdown voltage to be used in a radio frequency identification (RFID) tag and a method for fabricating the same. The schottky diode includes a silicon substrate having a structure in which an N-type well is formed on a P-type substrate, an insulating layer surrounding a circumference of the N-type well so as to electrically separate the N-type well from the P-type substrate, an N+ doping layer partly formed in a portion of a region of an upper surface of the N-type well, an N− doping layer partly formed in the other portion of a region of the upper surface of the N-type well, a cathode formed on the N+ doping layer, and an anode formed on the N− doping layer.

    摘要翻译: 提供了在射频识别(RFID)标签中使用具有适当的低击穿电压的肖特基二极管及其制造方法。 肖特基二极管包括具有在P型衬底上形成N型阱的结构的硅衬底,围绕N型阱的周围的绝缘层,以将N型阱与 P型衬底,部分地形成在N型阱的上表面的一部分区域中的N +掺杂层,部分地形成在N型阱的上表面的区域的另一部分中的N掺杂层, 类型良好,形成在N +掺杂层上的阴极和形成在N掺杂层上的阳极。

    MEMS switch
    59.
    发明授权
    MEMS switch 有权
    MEMS开关

    公开(公告)号:US07257307B2

    公开(公告)日:2007-08-14

    申请号:US11471511

    申请日:2006-06-21

    IPC分类号: G02B6/00

    CPC分类号: H01H59/0009 H01H1/20

    摘要: A MEMS (micro electro mechanical system) switch, which includes a substrate; a fixed electrode formed on an upper side of the substrate; a signal line formed on both sides of the fixed electrode; a contact member formed on an upper side of the signal line at a distance from said fixed electrode and contacting an edging portion of the signal line; a supporting member supporting the contact member to be movable; and a moving electrode disposed on an upper side of the supporting member.

    摘要翻译: MEMS(微机电系统)开关,其包括基板; 固定电极,形成在所述基板的上侧; 形成在固定电极两侧的信号线; 接触构件,形成在距离所述固定电极一定距离的信号线的上侧,并与信号线的边缘部分接触; 支撑构件,其支撑所述接触构件以可移动; 以及设置在所述支撑构件的上侧的移动电极。

    Inductor integrated chip and fabrication method thereof
    60.
    发明申请
    Inductor integrated chip and fabrication method thereof 有权
    电感集成芯片及其制造方法

    公开(公告)号:US20070138594A1

    公开(公告)日:2007-06-21

    申请号:US11473079

    申请日:2006-06-23

    IPC分类号: H01L29/00

    CPC分类号: H03H9/0542 H03H9/105

    摘要: An inductor integrated chip and fabrication method thereof is provided. The inductor integrated chip includes a wafer; an inductor bonded on a surface of the wafer; a circuit element formed on the surface of the wafer and coupled to a first end of the inductor; a packaging wafer connected to the surface of the wafer and packaging the inductor and the circuit element; and a connecting electrode formed on the packaging wafer and connected to a second end of the inductor. The method includes forming an inductor and a circuit element on a surface of a wafer, wherein the circuit element is coupled to a first end of the inductor; forming a connecting electrode on a packaging wafer; and packaging the inductor and the circuit element by joining the wafer and the packaging wafer so as to connect the connecting electrode with a second end of the inductor.

    摘要翻译: 提供一种电感器集成芯片及其制造方法。 电感器集成芯片包括晶片; 结合在晶片表面上的电感器; 电路元件,其形成在所述晶片的表面上并且耦合到所述电感器的第一端; 连接到晶片表面并封装电感器和电路元件的封装晶片; 以及形成在封装晶片上并连接到电感器的第二端的连接电极。 该方法包括在晶片的表面上形成电感器和电路元件,其中电路元件耦合到电感器的第一端; 在封装晶片上形成连接电极; 并且通过接合晶片和封装晶片来封装电感器和电路元件,以将连接电极与电感器的第二端连接。