公开(公告)号：US09257175B2

公开(公告)日：2016-02-09

申请号：US14038165

申请日：2013-09-26

Applicant: INTEL CORPORATION

Inventor： Kiran Pangal ,  Raj K. Ramanujan ,  Robert W. Faber ,  Rajesh Sundaram

IPC: G06F13/12 ,  G11C11/00 ,  G11C13/00

CPC classification number: G11C13/0033 ,  G11C13/0004 ,  G11C2013/0076

Abstract: Embodiments including systems, methods, and apparatuses associated with refreshing memory cells are disclosed herein. In embodiments, a memory controller may be configured to perform a read operation on one or more memory cells in a cross-point non-volatile memory such as a phase change memory (PCM). The one or more memory cells may have voltage values respectively set to a first threshold voltage or a second threshold voltage. Based on the read, the memory controller may identify the memory cells in the cross-point non-volatile memory that are set to the second threshold voltage, and refresh the voltage values of those cells without altering the voltage values of the memory cells in the cross-point non-volatile memory that are set to the first threshold voltage. Other embodiments may be described or claimed.

Abstract translation: 本文公开了包括与刷新存储器单元相关联的系统，方法和装置的实施例。 在实施例中，存储器控制器可以被配置为对诸如相变存储器（PCM）的交叉点非易失性存储器中的一个或多个存储器单元执行读取操作。 一个或多个存储单元可以具有分别设置为第一阈值电压或第二阈值电压的电压值。 基于读取，存储器控制器可以识别被设置为第二阈值电压的交叉点非易失性存储器中的存储器单元，并且在不改变这些存储器单元的电压值的情况下刷新那些单元的电压值 交叉点非易失性存储器被设置为第一阈值电压。 可以描述或要求保护其他实施例。

公开(公告)号：US20150089120A1

公开(公告)日：2015-03-26

申请号：US14038165

申请日：2013-09-26

Applicant: INTEL CORPORATION

Inventor： Kiran Pangal ,  Raj K. Ramanujan ,  Robert W. Faber ,  Rajesh Sundaram

IPC: G11C14/00

CPC classification number: G11C13/0033 ,  G11C13/0004 ,  G11C2013/0076

Abstract: Embodiments including systems, methods, and apparatuses associated with refreshing memory cells are disclosed herein. In embodiments, a memory controller may be configured to perform a read operation on one or more memory cells in a cross-point non-volatile memory such as a phase change memory (PCM). The one or more memory cells may have voltage values respectively set to a first threshold voltage or a second threshold voltage. Based on the read, the memory controller may identify the memory cells in the cross-point non-volatile memory that are set to the second threshold voltage, and refresh the voltage values of those cells without altering the voltage values of the memory cells in the cross-point non-volatile memory that are set to the first threshold voltage. Other embodiments may be described or claimed.

Abstract translation: 本文公开了包括与刷新存储器单元相关联的系统，方法和装置的实施例。 在实施例中，存储器控制器可以被配置为对诸如相变存储器（PCM）的交叉点非易失性存储器中的一个或多个存储器单元执行读取操作。 一个或多个存储单元可以具有分别设置为第一阈值电压或第二阈值电压的电压值。 基于读取，存储器控制器可以识别被设置为第二阈值电压的交叉点非易失性存储器中的存储器单元，并且在不改变这些存储器单元的电压值的情况下刷新那些单元的电压值 交叉点非易失性存储器被设置为第一阈值电压。 可以描述或要求保护其他实施例。