公开(公告)号：US20050148150A1

公开(公告)日：2005-07-07

申请号：US10988836

申请日：2004-11-16

申请人： John Moore ,  Kristy Campbell ,  Terry Gilton

发明人： John Moore ,  Kristy Campbell ,  Terry Gilton

IPC分类号： C23C14/06 ,  C23C16/30 ,  H01L45/00 ,  H01L21/20

CPC分类号： C23C16/305 ,  C23C14/0623 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/143 ,  H01L45/1616 ,  H01L45/1625 ,  Y10T428/12694

摘要： A method for controlling silver doping of a chalcogenide glass in a resistance variable memory element is disclosed herein. The method includes forming a thin metal containing layer having a thickness of less than about 250 Angstroms over a second chalcogenide glass layer, formed over a first metal containing layer, formed over a first chalcogenide glass layer. The thin metal containing layer preferably is a silver layer. An electrode may be formed over the thin silver layer. The electrode preferably does not contain silver.

摘要翻译： 本文公开了一种用于控制电阻变量存储元件中硫族化物玻璃的银掺杂的方法。 该方法包括在第一硫族化物玻璃层上形成的厚度小于约250埃的含金属薄层，形成在第一硫族化物玻璃层上形成的第一金属含层上。 含金属薄层优选为银层。 可以在薄银层上方形成电极。 电极优选不含银。

公开(公告)号：US20050133778A1

公开(公告)日：2005-06-23

申请号：US11033873

申请日：2005-01-13

申请人： Kristy Campbell ,  Terry Gilton ,  John Moore ,  Joseph Brooks

发明人： Kristy Campbell ,  Terry Gilton ,  John Moore ,  Joseph Brooks

IPC分类号： C03C3/32 ,  C03C17/02 ,  G05F1/44 ,  G11C16/02 ,  H01L27/00 ,  H01L29/06 ,  H01L45/00

CPC分类号： C03C3/321 ,  C03C17/02 ,  G11C13/0004 ,  G11C13/0011 ,  G11C27/00 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/143 ,  H01L45/1608 ,  H01L45/1641

摘要： The invention is related to methods and apparatus for providing a two-terminal constant current device, and its operation thereof. The invention provides a constant current device that maintains a constant current over an applied voltage range of at least approximately 700 mV. The invention also provides a method of changing and resetting the constant current value in a constant current device by either applying a positive potential to decrease the constant current value, or by applying a voltage more negative than the existing constant current's voltage upper limit, thereby resetting or increasing its constant current level to its original fabricated value. The invention further provides a method of forming and converting a memory device into a constant current device. The invention also provides a method for using a constant current device as an analog memory device.

公开(公告)号：US20050104105A1

公开(公告)日：2005-05-19

申请号：US11001306

申请日：2004-12-02

申请人： Kristy Campbell

发明人： Kristy Campbell

IPC分类号： G11C11/404 ,  H01L27/24 ,  H01L45/00 ,  H04M1/24

CPC分类号： G11C11/404 ,  G11C2211/5614 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/143 ,  H01L45/1625 ,  H01L45/1658 ,  H01L45/1675 ,  H01L45/1683

摘要： The invention relates to a DNR (differential negative resistance) exhibiting device that can be programmed to store information as readable current amplitudes and to methods of making such a device. The stored data is semi-volatile. Generally, information written to a device in accordance with the invention can maintain its memory for a matter of minutes, hours, or days before a refresh is necessary. The power requirements of the device are far reduced compared to DRAM. The memory function of the device is highly stable, repeatable, and predictable. The device can be produced in a variety of ways.

摘要翻译： 本发明涉及可被编程为将信息存储为可读电流幅度的DNR（差分负电阻）展示装置以及制造这种装置的方法。 存储的数据是半挥发性的。 通常，写入根据本发明的设备的信息可以在需要刷新之前的几分钟，几小时或几天内保持其记忆。 与DRAM相比，器件的功耗要求大大降低。 设备的记忆功能是高度稳定，可重复和可预测的。 该装置可以以各种方式制造。