公开(公告)号：US20090025195A1

公开(公告)日：2009-01-29

申请号：US12081862

申请日：2008-04-22

申请人： Woon-Chun Kim ,  Sung Yi ,  Hwa-Sun Park ,  Hong-Won Kim ,  Dae-Jun Kim ,  Jin-Seon Park

发明人： Woon-Chun Kim ,  Sung Yi ,  Hwa-Sun Park ,  Hong-Won Kim ,  Dae-Jun Kim ,  Jin-Seon Park

IPC分类号： H01G9/00

CPC分类号： H05K1/162 ,  H05K3/108 ,  H05K3/386 ,  H05K3/4626 ,  H05K2201/0195 ,  H05K2201/09672 ,  Y10T29/417 ,  Y10T29/43 ,  Y10T29/435 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/49167

摘要： A method of manufacturing a capacitor-embedded PCB is disclosed. The method may include fabricating a capacitor substrate having at least one inner electrode formed on one side of a dielectric layer; aligning a semi-cured insulation layer with one side of a core layer, and aligning the capacitor substrate with the semi-cured insulation layer such that the inner electrode faces the semi-cured insulation layer; and collectively stacking the core layer, the semi-cured insulation layer, and the capacitor substrate.

摘要翻译： 公开了一种制造电容器嵌入式PCB的方法。 该方法可以包括制造具有形成在电介质层的一侧上的至少一个内部电极的电容器基板; 将半固化绝缘层与芯层的一侧对准，并将电容器基板与半固化绝缘层对准，使得内电极面向半固化绝缘层; 并且集中地堆叠芯层，半固化绝缘层和电容器基板。