公开(公告)号：US5554854A

公开(公告)日：1996-09-10

申请号：US503299

申请日：1995-07-17

申请人： Julian G. Blake

发明人： Julian G. Blake

IPC分类号： C23C14/00 ,  C23C14/48 ,  H01J37/30 ,  H01J37/317 ,  H01L21/265 ,  H01J37/36

CPC分类号： H01J37/3002 ,  H01J2237/0041 ,  H01J2237/022 ,  H01J2237/31701

摘要： An in situ method of removing contaminant material adhering to interior surfaces of an ion beam implanter is disclosed. The method includes the steps of: extracting ions from source materials and forming the ions into an ion beam that traverses a beam path through an evacuated region to an ion implantation chamber; providing a control means for controlling a trajectory of the ion beam within the evacuated region; utilizing the control means to direct the ion beam to strike interior surfaces of the ion beam implanter in contact with the evacuated region to dislodge the contaminant material; and removing the contaminant material from the evacuated region of the implanter.

摘要翻译： 公开了一种去除附着在离子束注入机的内表面上的污染物质的原位方法。 该方法包括以下步骤：从源材料中提取离子并将离子形成离子束，所述离子束穿过穿过抽真空区域的光束路径到离子注入室; 提供用于控制所述抽空区域内的离子束的轨迹的控制装置; 利用所述控制装置引导所述离子束撞击所述离子束注入机的与所述抽空区域接触的内表面以移除所述污染物质; 以及从注入机的抽空区域去除污染物质。