公开(公告)号：US09093104B2

公开(公告)日：2015-07-28

申请号：US13342762

申请日：2012-01-03

申请人： Frank Sinclair ,  Julian G. Blake ,  Helen L. Maynard ,  Alexander C. Kontos

发明人： Frank Sinclair ,  Julian G. Blake ,  Helen L. Maynard ,  Alexander C. Kontos

IPC分类号： B44C1/22 ,  G11B5/855

CPC分类号： G11B5/855

摘要： A novel technique for manufacturing bit patterned media is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for manufacturing bit pattern media. The technique, which may be realized as a method comprising: forming a non-catalysis region on a first portion of a catalysis layer; forming a non-magnetic separator on the non-catalysis region; and forming a magnetic active region on a second portion of the catalysis layer adjacent to the first portion of the catalysis layer.

摘要翻译： 公开了一种用于制造位图案化介质的新型技术。 在一个特定的示例性实施例中，该技术可以被实现为用于制造钻头图案介质的方法。 该技术可以被实现为一种方法，包括：在催化层的第一部分上形成非催化区; 在非催化区上形成非磁性分离器; 以及在催化层的与催化层的第一部分相邻的第二部分上形成磁性活性区域。

公开(公告)号：US08466039B2

公开(公告)日：2013-06-18

申请号：US13399637

申请日：2012-02-17

申请人： Deepak A. Ramappa ,  Julian G. Blake

发明人： Deepak A. Ramappa ,  Julian G. Blake

IPC分类号： H01L21/30

CPC分类号： H01L21/76254 ,  Y10S438/977

摘要： A method of cleaving a substrate is disclosed. A species, such as hydrogen or helium, is implanted into a substrate to form a layer of microbubbles. The substrate is then annealed a pressure greater than atmosphere. This annealing may be performed in the presence of the species that was implanted. This diffuses the species into the substrate. The substrate is then cleaved along the layer of microbubbles. Other steps to form an oxide layer or to bond to a handle also may be included.

摘要翻译： 公开了一种切割基板的方法。 将诸如氢或氦的物质植入衬底中以形成微泡层。 然后将衬底退火，压力大于大气压。 该退火可以在植入物种的存在下进行。 这将物种扩散到基质中。 然后沿着微泡层切割底物。 可以包括形成氧化物层或结合到手柄的其它步骤。

公开(公告)号：US08329260B2

公开(公告)日：2012-12-11

申请号：US12181516

申请日：2008-07-29

申请人： Julian G. Blake ,  Paul J. Murphy

发明人： Julian G. Blake ,  Paul J. Murphy

IPC分类号： C23C14/48 ,  C23C14/58 ,  C23C14/54 ,  C23C14/10

CPC分类号： H01L21/76254 ,  H01J2237/2001 ,  H01J2237/31701

摘要： A substrate is implanted with a species to form a layer of microbubbles in the substrate. The species may be hydrogen or helium in some embodiments. The size at which the microbubbles are stable within the substrate is controlled. In one example, this is by cooling the substrate. In one embodiment, the substrate is cooled to approximately between −150° C. and 30° C. This cooling also may reduce diffusion of the species in the substrate and will reduce surface roughness when the substrate is cleaved along the layer of microbubbles.

摘要翻译： 植入衬底以在衬底中形成微泡层。 在一些实施方案中，该物质可以是氢或氦。 微泡在基底内稳定的尺寸受到控制。 在一个实例中，这是通过冷却衬底。 在一个实施方案中，将基底冷却至约-150℃至30℃。该冷却还可以减少物质在基底中的扩散，并且当沿着微泡层切割基底时将降低表面粗糙度。

公开(公告)号：US20120280442A1

公开(公告)日：2012-11-08

申请号：US13101280

申请日：2011-05-05

申请人： Richard J. Hertel ,  Julian G. Blake ,  Edward D. MacIntosh ,  Alexander C. Kontos ,  Frank Sinclair ,  Christopher A. Rowland ,  Mayur Jagtap ,  Sankar Ganesh Kolappan

发明人： Richard J. Hertel ,  Julian G. Blake ,  Edward D. MacIntosh ,  Alexander C. Kontos ,  Frank Sinclair ,  Christopher A. Rowland ,  Mayur Jagtap ,  Sankar Ganesh Kolappan

IPC分类号： B23Q3/06 ,  B25B11/00

CPC分类号： H01L21/68771 ,  G11B23/0021 ,  G11B23/0317 ,  G11B23/0327

摘要： A media carrier, adapted to hold a plurality of pieces of magnetic media, is disclosed. This media carrier can be placed on the workpiece support, or platen, allowing the magnetic media to be processed. In some embodiments, the media carrier is designed such that only one side of the magnetic media is exposed, requiring a robot or other equipment to invert each piece of media in the carrier to process the second side. In other embodiments, the media carrier is designed such that both sides of the magnetic media are exposed. In this scenario, the media carrier is inverted on the platen to allow processing of the second side.

摘要翻译： 公开了适于容纳多个磁性介质的介质载体。 该介质载体可以放置在工件支撑件或压板上，允许磁性介质被处理。 在一些实施例中，介质载体被设计成使得只有磁性介质的一侧被暴露，需要机器人或其他设备来反转载体中的每个介质以处理第二侧。 在其他实施例中，介质载体被设计成使得磁性介质的两侧都被暴露。 在这种情况下，媒体载体在压板上反转，以允许处理第二面。

公开(公告)号：US20120168640A1

公开(公告)日：2012-07-05

申请号：US12983710

申请日：2011-01-03

申请人： Timothy J. Miller ,  Richard S. Muka ,  Julian G. Blake

发明人： Timothy J. Miller ,  Richard S. Muka ,  Julian G. Blake

IPC分类号： H01L21/425 ,  G01N23/00 ,  H01L21/683

CPC分类号： H01L21/6831 ,  H01L21/67109

摘要： An electrostatic clamp includes a heating block for heating a substrate, the heating block having a first surface disposed toward the substrate and a second surface opposite the first surface. A base is arranged to adjoin at least a portion of the second surface of the heating block. The adjoined base and heating block may mutually define an inner gap between a first portion of the heating block and the base. An outer gap is arranged concentric with the inner gap between a second portion of the heating block and the base, the inner and outer gaps being isolated from one another by a first sealing surface formed between the second surface of the heating block and the base.

摘要翻译： 静电夹具包括用于加热衬底的加热块，加热块具有朝向衬底设置的第一表面和与第一表面相对的第二表面。 基座被布置成邻接加热块的第二表面的至少一部分。 邻接的基座和加热块可以相互限定加热块的第一部分和基座之间的内部间隙。 外部间隙与加热块的第二部分和基座之间的内部间隙同心地布置，内部和外部间隙通过形成在加热块的第二表面和基座之间的第一密封表面彼此隔离。

公开(公告)号：US06794662B1

公开(公告)日：2004-09-21

申请号：US10680829

申请日：2003-10-07

申请人： William Leavitt ,  Steven Richards ,  Julian G. Blake

发明人： William Leavitt ,  Steven Richards ,  Julian G. Blake

IPC分类号： H01J3720

CPC分类号： H01L21/68707 ,  H01J2237/20 ,  H01J2237/31701

摘要： Wafer-holding structures formed from thermosetting resins are disclosed for use in semiconductor processing including, for example, SIMOX wafer processing. In one embodiment a pin is disclosed that is adapted to receive a wafer edge, and is coupled with a wafer holder assembly. The pin can be filled with a conductive material to provide an electrical pathway between the wafer and the wafer holder assembly, which can be coupled to a ground. This arrangement provides a conductive path for inhibiting electrical discharges from the wafer during the ion implantation process. The pin exhibits thermal isolation characteristics and sufficient hardness so as to not effect localized thermal dissipation of the wafer, yet is sufficiently soft so as to not mark or otherwise damage the wafer.

摘要翻译： 公开了由热固性树脂形成的晶片保持结构用于半导体处理，包括例如SIMOX晶片处理。 在一个实施例中，公开了适于接收晶片边缘并且与晶片保持器组件耦合的销。 引脚可以填充导电材料，以在晶片和晶片保持器组件之间提供可以耦合到地面的电路径。 这种布置提供用于在离子注入过程期间抑制来自晶片的放电的导电路径。 针具有热隔离特性和足够的硬度，从而不会影响晶片的局部散热，但是其足够柔软以便不会对晶片造成损伤或以其它方式损坏晶片。

公开(公告)号：US5811823A

公开(公告)日：1998-09-22

申请号：US757726

申请日：1996-11-26

申请人： Julian G. Blake ,  Piero Sferlazzo ,  Peter H. Rose ,  Adam A. Brailove

发明人： Julian G. Blake ,  Piero Sferlazzo ,  Peter H. Rose ,  Adam A. Brailove

IPC分类号： H01J37/04 ,  C23C14/48 ,  H01J27/14 ,  H01J37/08 ,  H01J37/18 ,  H01J37/30 ,  H01J37/304 ,  H01J37/317 ,  H01L21/00 ,  H01L21/265 ,  H01L21/677 ,  H01L21/683

CPC分类号： H01L21/67109 ,  H01J27/14 ,  H01J37/08 ,  H01J37/18 ,  H01J37/3002 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3171 ,  H01L21/67069 ,  H01L21/67739 ,  H01L21/67748 ,  H01L21/67751 ,  H01L21/67778 ,  H01L21/6838 ,  H01J2237/022 ,  H01J2237/083 ,  H01J2237/184 ,  H01J2237/2001 ,  H01J2237/2007 ,  H01J2237/20228 ,  H01J2237/204 ,  H01J2237/31701 ,  H01J2237/31705

摘要： A high throughput ion implantation system that rapidly and efficiently processes large quantities of flat panel displays. The ion implantation system has an ion source, an electrode assembly, a platform mounting a workpiece, and a ion beam measuring structure. The ion source in conjunction with the electrode assembly forms an ion beam in the shape of a ribbon beam. The ion beam is formed and directed such that a first portion of the ion beam treats the workpiece while a second portion of the ion beam is contemporaneously measured by the beam measuring structure. A controller obtains data from the beam measuring structure on the ion beam's parameters, and then generates control signals to the ion implantation system in response to the data.

摘要翻译： 快速有效地处理大量平板显示器的高通量离子注入系统。 离子注入系统具有离子源，电极组件，安装工件的平台和离子束测量结构。 与电极组件结合的离子源形成带状束形状的离子束。 离子束的形成和定向使得离子束的第一部分处理工件，而离子束的第二部分由束测量结构同时测量。 控制器从离子束参数获取束测量结构的数据，然后根据数据产生离子注入系统的控制信号。

公开(公告)号：US5444597A

公开(公告)日：1995-08-22

申请号：US29154

申请日：1993-03-10

申请人： Julian G. Blake ,  Weilin Tu

发明人： Julian G. Blake ,  Weilin Tu

IPC分类号： B23Q3/15 ,  G01R27/26 ,  H01L21/265 ,  H01L21/683 ,  H02N13/00

CPC分类号： H01L21/67259 ,  H01L21/6831

摘要： A wafer position and clamp sensor. A circuit monitors capacitance between two electrodes within a wafer support. With no wafer on the support, the capacitance falls in one range, with the wafer in place but not clamped, the capacitance falls in a second range and with the wafer held in place by an electrostatic attraction the capacitance falls in a third range. The sensed capacitance is converted to a frequency and then a D.C. voltage level that can easily be sensed and used to confirm wafer placement and then wafer clamping. After the wafer has been treated, the wafer is removed and a next subsequent wafer treated. A clamping voltage applied to clamp the wafer to its support is reversed at a controlled frequency to release the wafer. The voltage reversal disrupts the electrostatic attraction between the wafer and its support.

摘要翻译： 晶圆位置和钳位传感器。 电路监测晶片支架内的两个电极之间的电容。 在支撑体上没有晶片的情况下，电容落在一个范围内，晶片就位，但没有被夹紧，电容下降到第二范围，并且晶片通过静电吸引保持在适当的位置，电容落在第三范围内。 感测到的电容被转换为频率，然后转换成可以容易地被感测并用于确认晶片放置然后晶片夹紧的直流电压电平。 在晶片经过处理之后，晶片被去除并且接下来的后续晶片被处理。 施加以将晶片夹持到其支撑件的钳位电压以受控频率反转以释放晶片。 电压反转破坏晶片及其支撑体之间的静电吸引力。

公开(公告)号：US5436790A

公开(公告)日：1995-07-25

申请号：US005030

申请日：1993-01-15

申请人： Julian G. Blake ,  Weilin Tu ,  Dale K. Stone ,  Scott C. Holden

发明人： Julian G. Blake ,  Weilin Tu ,  Dale K. Stone ,  Scott C. Holden

IPC分类号： B23Q3/15 ,  G01R27/26 ,  H01L21/265 ,  H01L21/683 ,  H02N13/00

CPC分类号： H01L21/67259 ,  H01L21/6831

摘要： A wafer position and clamp sensor. A circuit monitors capacitance between two electrodes within a wafer support. With no wafer on the support, the capacitance falls in one range, with the wafer in place but not clamped, the capacitance falls in a second range and with the wafer held in place by an electrostatic attraction the capacitance falls in a third range. The sensed capacitance is converted to a frequency and then a DC voltage level that can easily be sensed and used to confirm wafer placement and then confirm wafer clamping.

摘要翻译： 晶圆位置和钳位传感器。 电路监测晶片支架内的两个电极之间的电容。 在支撑体上没有晶片的情况下，电容落在一个范围内，晶片就位，但没有被夹紧，电容下降到第二范围，并且晶片通过静电吸引保持在适当的位置，电容落在第三范围内。 感测到的电容被转换成一个频率，然后转换成一个直流电压电平，可以很容易地被感测并用于确认晶片放置，然后确认晶片钳位。

公开(公告)号：US08709533B2

公开(公告)日：2014-04-29

申请号：US13228426

申请日：2011-09-08

申请人： Frank Sinclair ,  Julian G. Blake

发明人： Frank Sinclair ,  Julian G. Blake

IPC分类号： G11B5/708

CPC分类号： G11B5/855

摘要： A technique for manufacturing hit pattern media is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for manufacturing bit pattern media. The method may comprise forming an intermediate layer comprising a modified region and a first region adjacent to one another, where the modified region and the first region may have at least one different property; depositing magnetic species on the first region of the intermediate layer to form an active region; and depositing non-ferromagnetic species on the modified region of the intermediate layer to form a separator.

摘要翻译： 公开了一种制造命中图形介质的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于制造钻头图案介质的方法。 该方法可以包括形成包括相邻的修饰区域和第一区域的中间层，其中改质区域和第一区域可具有至少一个不同的性质; 在所述中间层的第一区域上沉积磁性物质以形成活性区域; 并将非铁磁物质沉积在中间层的改性区上以形成隔膜。