公开(公告)号：US11728133B2

公开(公告)日：2023-08-15

申请号：US17513243

申请日：2021-10-28

申请人： Applied Materials, Inc.

发明人： Keith E. Kowal

IPC分类号： H01J37/00 ,  H01J37/317 ,  H01J37/30

CPC分类号： H01J37/3171 ,  H01J37/3002 ,  H01J2237/04737

摘要： An apparatus may include an exciter, disposed within a resonance chamber, to generate an RF power signal. The apparatus may include a resonator coil, disposed within the resonance chamber, to receive the RF power signal, and generate an RF output signal; and a pickup loop assembly, to receive the RF output signal and output a pickup voltage signal. The pickup loop assembly may include a pickup loop, disposed within the resonance chamber; and a variable attenuator, disposed at least partially between the resonator coil and the pickup loop. The variable attenuator may include a configurable portion, movable from a first position, attenuating a first amount of the RF output signal, to a second position, attenuating a second amount of the RF output signal, different from the first amount.

公开(公告)号：US20180358202A1

公开(公告)日：2018-12-13

申请号：US16102868

申请日：2018-08-14

申请人： Axcelis Technologies, Inc.

发明人： Neil K. Colvin ,  Tseh-Jen Hsieh ,  Paul B. Silverstein

IPC分类号： H01J37/30 ,  H01J37/317 ,  H01J37/08

CPC分类号： H01J37/3002 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/061

摘要： An ion implantation system is provided having one or more conductive components comprised of one or more of lanthanated tungsten and a refractory metal alloyed with a predetermined percentage of a rare earth metal. The conductive component may be a component of an ion source, such as one or more of a cathode, cathode shield, a repeller, a liner, an aperture plate, an arc chamber body, and a strike plate. The aperture plate may be associated with one or more of an extraction aperture, a suppression aperture and a ground aperture.

公开(公告)号：US10014164B2

公开(公告)日：2018-07-03

申请号：US15592426

申请日：2017-05-11

申请人： Veeco Instruments Inc.

发明人： Boris Druz ,  Rustam Yevtukhov ,  Rhodri Elliott ,  James M. Best, Jr. ,  Peter Porshnev

IPC分类号： H01J37/36 ,  H01J37/30 ,  G01R19/165 ,  H01J37/32

CPC分类号： H01J37/36 ,  G01R19/16533 ,  H01J37/3002 ,  H01J37/3007 ,  H01J37/32018 ,  H01J37/32944 ,  H01J2237/0206 ,  H01J2237/0213 ,  H01J2237/18 ,  H01J2237/335

摘要： Embodiments relate to a grid short clearing system is provided for gridded ion beam sources used in industrial applications for materials processing systems that reduces grid damage during operation. In various embodiments, the ion source is coupled to a process chamber and a grid short clearing system includes methods for supplying a gas to the process chamber and setting the gas pressure to a predetermined gas pressure in the range between 50 to 750 Torr, applying an electrical potential difference between each adjacent pair of grids using a current-limited power supply, and detecting whether or not the grid shorts are cleared. The electrical potential difference between the grids is at least 10% lower than the DC electrical breakdown voltage between the grids with no contaminants.

公开(公告)号：US20180068829A1

公开(公告)日：2018-03-08

申请号：US15695857

申请日：2017-09-05

申请人： SUMITOMO HEAVY INDUSTRIES ION TECHNOLOGY CO., LTD.

发明人： Kazuhisa Ishibashi ,  Shiro Ninomiya ,  Akihiro Ochi ,  Toshio Yumiyama

IPC分类号： H01J37/304 ,  H01J37/30 ,  H01L21/265 ,  H01J37/317

CPC分类号： H01J37/304 ,  H01J37/3002 ,  H01J37/3171 ,  H01J2237/24514 ,  H01J2237/30455 ,  H01J2237/30477 ,  H01J2237/30488 ,  H01J2237/31701 ,  H01L21/265

摘要： An ion implantation apparatus includes a beam scanner that provides a reciprocating beam scan in a beam scan direction in accordance with a scan waveform, a mechanical scanner that causes a wafer to reciprocate in a mechanical scan direction, and a control device that controls the beam scanner and the mechanical scanner to realize a target two-dimensional dose amount distribution on a surface of the wafer. The control device includes a scan frequency adjusting unit that determines a frequency of the scan waveform in accordance with the target two-dimensional dose amount distribution, and a beam scanner driving unit that drives the beam scanner by using the scan waveform having the frequency determined by the scan frequency adjusting unit.

公开(公告)号：US09899189B2

公开(公告)日：2018-02-20

申请号：US15206331

申请日：2016-07-11

申请人： Mitsubishi Electric Corporation

发明人： Shoichi Kuga

IPC分类号： H01J37/08 ,  H01J37/317 ,  H01J37/30

CPC分类号： H01J37/3171 ,  H01J37/08 ,  H01J37/3002 ,  H01J2237/0206 ,  H01J2237/31701

摘要： A technique disclosed in the present specification relates to an ion implanter capable of preventing a semiconductor substrate from being damaged by an abnormal electric discharge through a simple method. The ion implanter of this technique includes an ion irradiation unit configured to irradiate a surface of a semiconductor substrate with ions. The ion implanter also includes at least one electrode (needle electrode, annular electrode) disposed in a position in the vicinity of at least one of back and side surfaces of an end of the semiconductor substrate. The position is dischargeable to and from the semiconductor substrate. The at least one electrode (needle electrode, annular electrode) is spaced apart from the semiconductor substrate.

公开(公告)号：US09859098B2

公开(公告)日：2018-01-02

申请号：US14977720

申请日：2015-12-22

申请人： Varian Semiconductor Equipment Associates, Inc.

发明人： Scott C. Holden ,  Bon-Woong Koo ,  Brant S. Binns ,  Richard M. White ,  Kenneth L. Starks ,  Eric R. Cobb

IPC分类号： H01J27/02 ,  H01J37/30 ,  H01J37/08 ,  H01J37/317

CPC分类号： H01J37/3002 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/002

摘要： An ion source with improved temperature control is disclosed. A portion of the ion source is nestled within a recessed cavity in a heat sink, where the portion of the ion source and the recessed cavity are each shaped so that expansion of the ion source causes high pressure thermal contact with the heat sink. For example, the ion source may have a tapered cylindrical end, which fits within a recessed cavity in the heat sink. Thermal expansion of the ion source causes the tapered cylindrical end to press against the recessed cavity in the heat sink. By proper selection of the temperature of the heat sink, the temperature and flow of coolant fluid through the heat sink, and the size of the gap between the heat sink and the ion source, the temperature of the ion source can be controlled.

公开(公告)号：US20170358423A1

公开(公告)日：2017-12-14

申请号：US15592198

申请日：2017-05-11

申请人： Sodick Co., Ltd.

发明人： Motohiro INOUE

IPC分类号： H01J37/30 ,  H01J37/20 ,  H01J37/18

CPC分类号： H01J37/3002 ,  H01J37/185 ,  H01J37/20

摘要： A metal surface modification apparatus having a tilting unit includes holding jigs having respective lower parts having curved surfaces to hold the implants; a movable holding base provided with a plurality of receiving depressions to have curved surfaces corresponding to the curved surfaces of the lower parts; and a stationary pushing plate disposed on the movable holding base to cover the movable holding base, and configured to be moved relative to the movable holding base and to have a plurality of through holes positioned to face the receiving depressions.

公开(公告)号：US20170178860A1

公开(公告)日：2017-06-22

申请号：US15206331

申请日：2016-07-11

申请人： Mitsubishi Electric Corporation

发明人： Shoichi KUGA

IPC分类号： H01J37/317 ,  H01J37/30 ,  H01J37/08

CPC分类号： H01J37/3171 ,  H01J37/08 ,  H01J37/3002 ,  H01J2237/0206 ,  H01J2237/31701

摘要： A technique disclosed in the present specification relates to an ion implanter capable of preventing a semiconductor substrate from being damaged by an abnormal electric discharge through a simple method. The ion implanter of this technique includes an ion irradiation unit configured to irradiate a surface of a semiconductor substrate with ions. The ion implanter also includes at least one electrode (needle electrode, annular electrode) disposed in a position in the vicinity of at least one of back and side surfaces of an end of the semiconductor substrate. The position is dischargeable to and from the semiconductor substrate. The at least one electrode (needle electrode, annular electrode) is spaced apart from the semiconductor substrate.

公开(公告)号：US20170028096A1

公开(公告)日：2017-02-02

申请号：US15293519

申请日：2016-10-14

申请人： GLOBAL PLASMA SOLUTIONS, LLC

发明人： Charles Houston WADDELL ,  Joseph Anton CHRISTIANSEN

IPC分类号： A61L9/22 ,  F24F3/16 ,  B01D46/00 ,  B01D46/52 ,  B03C3/155 ,  F02M35/02 ,  H01J27/02 ,  H01J37/30 ,  H01J37/16 ,  F02M27/04 ,  F01N3/08 ,  H01T23/00 ,  B03C3/41

CPC分类号： A61L9/22 ,  A61L2209/16 ,  B01D46/0032 ,  B01D46/521 ,  B03C3/011 ,  B03C3/04 ,  B03C3/155 ,  B03C3/41 ,  B03C3/82 ,  F01N3/0892 ,  F02M27/04 ,  F02M27/042 ,  F02M35/0205 ,  F02M35/0217 ,  F16M13/02 ,  F24F3/166 ,  F24F2003/1682 ,  H01J27/022 ,  H01J27/028 ,  H01J37/08 ,  H01J37/16 ,  H01J37/3002 ,  H01T23/00

摘要： A system and method of treating air. Bipolar ionization is delivered to an airflow within a conduit from a tubeless ion generator. The ionized airflow may be delivered to a conditioned airspace by an HVAC system. In alternate applications, the airflow delivers ionized combustion air to an engine. The invention also includes a mounting assembly for positioning one or more ion generators into an airflow.

摘要翻译： 一种处理空气的系统和方法。 双极电离从无内胎离子发生器输送到导管内的气流中。 电离气流可以通过HVAC系统输送到调节空气空间。 在替代应用中，气流将离子化的燃烧空气传送到发动机。 本发明还包括用于将一个或多个离子发生器定位到气流中的安装组件。

公开(公告)号：US09552990B2

公开(公告)日：2017-01-24

申请号：US14136452

申请日：2013-12-20

申请人： Ashwini K. Sinha ,  Douglas C. Heiderman ,  Lloyd A. Brown ,  Serge M. Campeau ,  Robert Shih ,  Dragon Lu ,  Wen-Pin Chiu ,  Chien-Kang Kao

发明人： Ashwini K. Sinha ,  Douglas C. Heiderman ,  Lloyd A. Brown ,  Serge M. Campeau ,  Robert Shih ,  Dragon Lu ,  Wen-Pin Chiu ,  Chien-Kang Kao

IPC分类号： H01L21/425 ,  H01L21/265 ,  C01B3/00 ,  C23C14/34 ,  H01J37/317 ,  H01J37/30 ,  F17C1/00

CPC分类号： H01L21/265 ,  C01B3/00 ,  C01B23/00 ,  C23C14/34 ,  F17C1/005 ,  F17C2201/0109 ,  F17C2201/0114 ,  F17C2201/035 ,  F17C2201/058 ,  F17C2203/0617 ,  F17C2205/0329 ,  F17C2205/0332 ,  F17C2205/0335 ,  F17C2205/0338 ,  F17C2205/035 ,  F17C2205/0385 ,  F17C2205/0391 ,  F17C2221/03 ,  F17C2223/0123 ,  F17C2225/038 ,  F17C2260/044 ,  F17C2270/0518 ,  F17C2270/0745 ,  H01J37/3002 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/31701 ,  Y02E60/321 ,  Y02E60/324 ,  Y10T137/2012

摘要： A supply source for delivery of a CO-containing dopant gas composition is provided. The composition includes a controlled amount of a diluent gas mixture such as xenon and hydrogen, which are each provided at controlled volumetric ratios to ensure optimal carbon ion implantation performance. The composition can be packaged as a dopant gas kit consisting of a CO-containing supply source and a diluent mixture supply source. Alternatively, the composition can be pre-mixed and introduced from a single source that can be actuated in response to a sub-atmospheric condition achieved along the discharge flow path to allow a controlled flow of the dopant mixture from the interior volume of the device into an ion source apparatus.

摘要翻译： 提供用于输送含CO掺杂剂气体组合物的供应源。 该组合物包括受控量的稀释气体混合物，例如氙气和氢气，其以受控的体积比提供，以确保最佳的碳离子注入性能。 该组合物可以包装为由含CO供应源和稀释剂混合物供应源组成的掺杂剂气体试剂盒。 或者，组合物可以从单个源预混合并引入，该源可以响应于沿着排放流动路径获得的亚大气条件而被致动，以允许掺杂剂混合物从装置的内部容积受到控制的流动 离子源装置。