公开(公告)号：US09147530B2

公开(公告)日：2015-09-29

申请号：US14018001

申请日：2013-09-04

Applicant: Kemet Electronics Corporation

Inventor： Steven C. Hussey ,  Yuri Freeman ,  Philip M. Lessner ,  Qingping Chen ,  Javaid Qazi

IPC: H01G9/00 ,  H01G13/00 ,  H01G9/012 ,  H01G9/028 ,  H01G9/042 ,  H01G9/06 ,  H01G9/08 ,  H01G9/15

CPC classification number: H01G13/00 ,  B23K2101/38 ,  H01G9/012 ,  H01G9/028 ,  H01G9/0425 ,  H01G9/06 ,  H01G9/08 ,  H01G9/15

Abstract: A process for providing an improved hermetically sealed capacitor which includes the steps of applying a solder and a flux to an interior surface of a case; flowing the solder onto the interior surface; remove flux thereby forming a flux depleted solder; inserting the capacitive element into the casing; reflowing the flux depleted solder thereby forming a solder joint between the case and the solderable layer; and sealing the case.

Abstract translation: 一种用于提供改进的密封电容器的方法，包括以下步骤：将焊料和助焊剂施加到壳体的内表面; 将焊料流到内表面上; 去除焊剂，从而形成焊剂耗尽的焊料; 将电容元件插入壳体中; 回流焊剂消耗的焊料，从而在外壳和可焊层之间形成焊接接头; 并密封外壳。

公开(公告)号：US20130314845A1

公开(公告)日：2013-11-28

申请号：US13959995

申请日：2013-08-06

Applicant: Kemet Electronics Corporation

Inventor： Antony P. Chacko ,  John E. McConnell ,  Robert Ramsbottom ,  Philip M. Lessner ,  Randolph S. Hahn ,  John Bultitude

IPC: H01G9/048 ,  H01G9/00 ,  H01G11/26

CPC classification number: H01G9/048 ,  H01G9/0029 ,  H01G9/012 ,  H01G9/04 ,  H01G9/0425 ,  H01G11/26 ,  Y10T29/417

Abstract: A solid electrolytic capacitor is described which comprises an anode, a dielectric on the anode and a cathode on the dielectric. A conductive coating is on the cathode wherein the conductive layer comprises an exterior surface of a first high melting point metal. An adjacent layer is provided comprising a second high melting point metal, wherein the first high melting point metal and the second high melting point metal are metallurgically bonded with a low melting point metal.

Abstract translation: 描述了一种固体电解电容器，其包括阳极，阳极上的电介质和电介质上的阴极。 导电涂层在阴极上，其中导电层包括第一高熔点金属的外表面。 提供了包括第二高熔点金属的相邻层，其中第一高熔点金属和第二高熔点金属用低熔点金属冶金结合。