摘要:
A surface acoustic wave device has a duty that is greater than about 0.5, attenuation outside the pass band is increased, and an undesirable spurious response is effectively suppressed. The surface acoustic wave device includes an LiNbO3 substrate having Euler angles (0°±5°, θ±5°, 0°±10°), an electrode that is provided on the LiNbO3 substrate and that includes an IDT electrode primarily made of Cu, a first silicon oxide film that is provided in an area other than an area in which the electrode is arranged so as to have a thickness substantially equal to that of the electrode, and a second silicon oxide film that is arranged so as to cover the electrode and the first silicon oxide film, wherein the surface acoustic wave device utilizes an SH wave, wherein a duty D of the IDT electrode 3 is at least about 0.52, and θ of the Euler angles (0°±5, θ+5°, 0°±10°) is set so as to fall within a range that satisfies the following Inequality (1A) or (1B): (1) When 0.52≦D≦0.6, −10×D+92.5−100×C≦θ≦37.5×D2−57.75×D+104.075+5710×C2−1105.7×C+45.729 Inequality (1A) (2) When D>0.6, 86.5−100×C≦θ≦37.5×D2−57.75×D+104.075+5710×C2−1105.7λC+45.729 Inequality (1B) where D is a duty, and C is a thickness of the IDT.
摘要:
An optical pickup has a first compatible objective and a second compatible objective, the first objective having a diffractive lens structure capable of recording and playback to and from CD and HD DVD, the second objective having a diffractive lens structure capable of recording and playback to and from both DVD and BD. The first objective has the diffractive lens structure that meets the condition of 0.75≦(λ1×m1)/(λ3×m3)≦0.99, where m1 and m3 are diffraction orders of diffracted lights used to read and write CD and HD DVD. The second objective has the diffractive lens structure that meets the condition of 0.75≦(λ4×m4)/(λ2×m2)≦0.99, where m2 and m4 are diffraction orders of diffracted lights used to read and write DVD and BD.
摘要:
A surface acoustic wave device includes a piezoelectric substrate and interdigital electrodes disposed on the piezoelectric substrate, wherein each of the interdigital electrodes includes a main electrode layer made of Cu or an alloy that has Cu as its main component. The surface acoustic wave device also includes a tightly adhering layer which is disposed between the main electrode layer and the piezoelectric substrate and whose main component is NiCr, or a tightly adhering layer whose main component is Ti and whose film thickness is within a range of about 18 nm to about 60 nm.
摘要:
A surface acoustic wave device includes a piezoelectric substrate and interdigital electrodes disposed on the piezoelectric substrate, wherein each of the interdigital electrodes includes a main electrode layer made of Cu or an alloy that has Cu as its main component. The surface acoustic wave device also includes a tightly adhering layer which is disposed between the main electrode layer and the piezoelectric substrate and whose main component is NiCr, or a tightly adhering layer whose main component is Ti and whose film thickness is within a range of about 18 nm to about 60 nm.
摘要:
A method of manufacturing a surface acoustic wave device having a high electromechanical coefficient and reflection coefficient, and also having an improved frequency-temperature characteristic is achieved by forming a SiO2 film on an IDT so as to prevent cracking from occurring on a surface of the SiO2 film so that desired properties can be reliably obtained. The surface acoustic wave device includes at least one IDT, which is composed of a metal or an alloy having a density higher than that of Al and is formed on a 25° to 55° rotation-Y plate X propagation LiTaO3 substrate, and a SiO2 film disposed on the LiTaO3 substrate so as to cover the at least one IDT for improving the frequency-temperature characteristic.
摘要:
A surface acoustic wave device has a high electromechanical coefficient and reflection coefficient, and also has an improved frequency-temperature characteristic that is achieved by forming a SiO2 film on an IDT so as to prevent cracking from occurring on a surface of the SiO2 film so that desired properties can be reliably obtained. The surface acoustic wave device includes at least one IDT, which is composed of a metal or an alloy having a density higher than that of Al and is formed on a 25° to 55° rotation-Y plate X propagation LiTaO3 substrate, and a SiO2 film disposed on the LiTaO3 substrate so as to cover the at least one IDT for improving the frequency-temperature characteristic.
摘要:
A reliable SAW device has excellent reflection and a small size, which is achieved by reducing the number of fingers defining reflectors, such that losses due to a large electromechanical coupling coefficient are small and the film thickness of electrodes has much less effect on frequencies of the device. In the SAW device having pluralities of first fingers and second fingers, disposed on a quartz substrate, constituting an IDT for exciting SH waves and reflectors for reflecting the SH waves, respectively, the first and second fingers made mainly from Al are disposed on the ST-cut 90° X-propagation quartz substrate with the Euler angles (0°, θ, 90°±2°), wherein the angle θ is within the range of about 110° to about 150°, and a normalized film thickness (H/λ) of the fingers is within in the range of about 0.025 to about 0.135.
摘要:
A surface acoustic wave device includes a surface acoustic wave element housed in a main body of a package. The surface acoustic wave element is electrically connected to electrode lands of the package via bonding wires, and the bonding wires are arranged so as not to pass over both of IDTs and reflectors of the surface acoustic wave device.
摘要:
A surface acoustic wave device has first and second surface acoustic wave filter elements which are arranged on a surface acoustic wave substrate so as to define a filter device having a two-stage configuration. A free surface portion is provided by forming a perforation in an inter-stage connecting portion connecting the first and second surface acoustic wave filter elements.
摘要:
An end-surface reflection type surface acoustic wave filter is capable of increasing an attenuation amount outside a pass band while insertion loss characteristics are not seriously deteriorated. The filter is a longitudinally coupled resonator type surface acoustic wave filter using an SH type surface acoustic wave, which has first and second grooves formed in a piezoelectric substrate at the top surface thereof so as to be substantially parallel to each other and spaced from each other by a predetermined distance. In addition, IDTs which are provided between the grooves for defining the longitudinally coupled resonator type surface acoustic wave filter, reflection end-surfaces disposed on side surfaces of the first and the second grooves at the IDT sides, and one of a resin-coating layer and a protective layer made of SiO2, are provided on the top surface of the piezoelectric substrate. The resin-coating layer is arranged to cover at least a region at which the IDTs are located and at least one of the first and the second grooves so as to intrude into one of them, and the protective layer is arranged so as to cover the IDTs.