公开(公告)号：US06879225B2

公开(公告)日：2005-04-12

申请号：US10610925

申请日：2003-07-01

申请人： Michio Kadota ,  Hideya Horiuchi ,  Takeshi Nakao ,  Yasuhiro Kuratani ,  Masakazu Mimura ,  Junya Ago

发明人： Michio Kadota ,  Hideya Horiuchi ,  Takeshi Nakao ,  Yasuhiro Kuratani ,  Masakazu Mimura ,  Junya Ago

IPC分类号： H03H9/145 ,  H03H3/10 ,  H03H9/02 ,  H03H9/25 ,  H03H9/64 ,  H03H9/15

CPC分类号： H03H9/6436 ,  H03H3/10 ,  H03H9/02559 ,  H03H9/02669 ,  H03H9/02834 ,  H03H9/02984 ,  H03H9/6433

摘要： A surface acoustic wave device includes a Y-cut, X-propagation LiTaO3 substrate, at least one interdigital transducer provided on the LiTaO3 substrate and made of Al or a metal containing Al as a major component, and an SiO2 film provided on the surface of the LiTaO3 substrate so as to cover the interdigital transducer, wherein the thickness Hs of the SiO2 film normalized by the wavelength λ of a surface acoustic wave and the cut angle θ of the LiTaO3 substrate are set to be in any one of the ranges represented by formulae (1) to (8): in the case of 0.00

摘要翻译： 表面声波装置包括Y切割的X传播LiTaO 3基板，设置在LiTaO 3基板上的由Al或含有Al作为主要成分的金属制成的至少一个叉指换能器，以及设置在 LiTaO 3衬底以覆盖叉指换能器，其中由表面声波的波长λ和LiTaO 3衬底的切割角度θ归一化的SiO 2膜的厚度Hs被设定为由 式（1）〜（8）：

公开(公告)号：US06784764B2

公开(公告)日：2004-08-31

申请号：US10218017

申请日：2002-08-14

申请人： Michio Kadota ,  Hideya Horiuchi ,  Junya Ago ,  Takeshi Nakao ,  Yasuhiro Kuratani

发明人： Michio Kadota ,  Hideya Horiuchi ,  Junya Ago ,  Takeshi Nakao ,  Yasuhiro Kuratani

IPC分类号： H03H900

CPC分类号： H03H9/02984 ,  H03H9/02669

摘要： An end-surface reflection type surface acoustic wave filter is capable of increasing an attenuation amount outside a pass band while insertion loss characteristics are not seriously deteriorated. The filter is a longitudinally coupled resonator type surface acoustic wave filter using an SH type surface acoustic wave, which has first and second grooves formed in a piezoelectric substrate at the top surface thereof so as to be substantially parallel to each other and spaced from each other by a predetermined distance. In addition, IDTs which are provided between the grooves for defining the longitudinally coupled resonator type surface acoustic wave filter, reflection end-surfaces disposed on side surfaces of the first and the second grooves at the IDT sides, and one of a resin-coating layer and a protective layer made of SiO2, are provided on the top surface of the piezoelectric substrate. The resin-coating layer is arranged to cover at least a region at which the IDTs are located and at least one of the first and the second grooves so as to intrude into one of them, and the protective layer is arranged so as to cover the IDTs.

摘要翻译： 端面反射型表面声波滤波器能够增加通带外的衰减量，而插入损耗特性不会严重恶化。 滤波器是使用SH型表面声波的纵向耦合的谐振器型表面声波滤波器，其具有在其顶表面上形成在压电基片中的第一和第二凹槽，以便彼此基本平行并彼此间隔开 预定距离。 另外，设置在用于限定纵向耦合的谐振器型声表面波滤波器的槽之间的IDT，设置在IDT侧的第一和第二槽的侧面的反射端面以及树脂被覆层 和由SiO 2制成的保护层设置在压电基板的顶表面上。 树脂涂层被设置成至少覆盖IDT所在的区域和第一和第二槽中的至少一个以侵入其中的一个，并且保护层被布置成覆盖 IDT。

公开(公告)号：US06806796B2

公开(公告)日：2004-10-19

申请号：US10725872

申请日：2003-12-02

申请人： Michio Kadota ,  Hideya Horiuchi ,  Junya Ago ,  Takeshi Nakao ,  Yasuhiro Kuratani

发明人： Michio Kadota ,  Hideya Horiuchi ,  Junya Ago ,  Takeshi Nakao ,  Yasuhiro Kuratani

IPC分类号： H03H900

CPC分类号： H03H9/02984 ,  H03H9/02669

摘要： An end-surface reflection type surface acoustic wave filter is capable of increasing an attenuation amount outside a pass band while insertion loss characteristics are not seriously deteriorated. The filter is a longitudinally coupled resonator type surface acoustic wave filter using an SH type surface acoustic wave, which has first and second grooves formed in a piezoelectric substrate at the top surface thereof so as to be substantially parallel to each other and spaced from each other by a predetermined distance. In addition, IDTs which are provided between the grooves for defining the longitudinally coupled resonator type surface acoustic wave filter, reflection end-surfaces disposed on side surfaces of the first and the second grooves at the IDT sides, and one of a resin-coating layer and a protective layer made of SiO2, are provided on the top surface of the piezoelectric substrate. The resin-coating layer is arranged to cover at least a region at which the IDTs are located and at least one of the first and the second grooves so as to intrude into one of them, and the protective layer is arranged so as to cover the IDTs.

公开(公告)号：US08677582B2

公开(公告)日：2014-03-25

申请号：US12706051

申请日：2010-02-16

申请人： Shunsuke Kido ,  Takeshi Nakao ,  Yasuharu Nakai ,  Kenji Nishiyama ,  Michio Kadota

发明人： Shunsuke Kido ,  Takeshi Nakao ,  Yasuharu Nakai ,  Kenji Nishiyama ,  Michio Kadota

IPC分类号： H03H3/04

CPC分类号： H03H9/02834 ,  H03H3/10 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155 ,  Y10T29/49165

摘要： A method for fabricating an acoustic wave device includes the steps of forming an insulating material layer on a piezoelectric substrate, forming a patterned photoresist on the insulating material layer, patterning the insulating material layer, and forming a piezoelectric-substrate exposed depression corresponding to a region where an interdigital transducer electrode is to be formed on a first insulator layer composed of the insulating material layer, depositing a metallic material on the piezoelectric substrate to form the interdigital transducer electrode in the piezoelectric-substrate exposed depression such that the overall interdigital transducer electrode is thinner than the first insulator layer and coating the photoresist with a metallic material, removing the photoresist and the metallic material on the photoresist, and depositing a second insulator layer so as to cover the interdigital transducer electrode and the first insulator layer.

摘要翻译： 一种制造声波器件的方法包括以下步骤：在压电衬底上形成绝缘材料层，在绝缘材料层上形成图案化的光致抗蚀剂，图案化绝缘材料层，形成压电衬底暴露的与区域相对应的凹陷 其中在由绝缘材料层构成的第一绝缘体层上形成叉指式换能器电极，在压电基板上沉积金属材料，以在压电基板暴露的凹陷中形成叉指式换能器电极，使得整个叉指式换能器电极为 比第一绝缘体层薄，并用金属材料涂覆光致抗蚀剂，去除光致抗蚀剂上的光致抗蚀剂和金属材料，并沉积第二绝缘体层以覆盖叉指式换能器电极和第一绝缘体层。

公开(公告)号：US07327071B2

公开(公告)日：2008-02-05

申请号：US11469505

申请日：2006-09-01

申请人： Kenji Nishiyama ,  Eiichi Takata ,  Takeshi Nakao ,  Michio Kadota

发明人： Kenji Nishiyama ,  Eiichi Takata ,  Takeshi Nakao ,  Michio Kadota

IPC分类号： H01L41/08

CPC分类号： H03H3/08 ,  H03H9/02984 ,  H03H9/14538 ,  H03H9/25

摘要： A surface acoustic wave device includes a piezoelectric substrate made of LiTaO3 or LiNbO3 having an electromechanical coefficient of about 15% or more, at least one electrode which is disposed on the piezoelectric substrate and which is a laminate film having a metal layer defining a primary metal layer primarily composed of a metal having a density higher than that of Al or an alloy of the metal and a metal layer which is laminated on the primary metal layer and which is composed of another metal, and a first SiO2 layer which is disposed in a remaining area other than that at which the at least one electrode is located and which has a thickness approximately equivalent to that of the electrode. In the surface acoustic wave device described above, the density of the electrode is at least about 1.5 times that of the first SiO2 layer. In addition, a second SiO2 layer disposed so as to cover the electrode and the first SiO2 layer and a silicon nitride compound layer disposed on the second SiO2 layer are further provided.

摘要翻译： 表面声波装置包括由机电系数为约15％以上的由LiT 3 O 3或LiNbO 3 3制成的压电基板，至少一个电极设置在 压电基板，其是具有金属层的层压膜，该金属层限定主要由密度高于Al的金属或金属和金属层的合金的主金属层构成的金属层，所述金属层与层叠在所述主金属层上的金属层的合金， 由另一种金属和第一SiO 2层构成，第一SiO 2层设置在除了至少一个电极所位于的其余区域之外的其余区域中，并且具有与电极的厚度大致相等的厚度 。 在上述表面声波装置中，电极的密度为第一SiO 2层的密度的至少约1.5倍。 此外，设置成覆盖电极和第一SiO 2层的第二SiO 2层和设置在第二SiO 2层上的氮化硅化合物层 进一步提供层。

公开(公告)号：US20070096592A1

公开(公告)日：2007-05-03

申请号：US10595237

申请日：2004-08-06

申请人： Michio Kadota ,  Takeshi Nakao

发明人： Michio Kadota ,  Takeshi Nakao

IPC分类号： H03H9/25

CPC分类号： H03H9/02559 ,  H03H3/08

摘要： A surface acoustic wave device includes a piezoelectric substrate made of LiNbO3 having an electromechanical coupling coefficient k whose square is at least about 0.025, at least one electrode that is made of a metal whose density is greater than that of Al or an alloy primarily including the metal or that is composed of laminated films made of a metal whose density is greater than that of Al or an alloy primarily including the metal and another metal, the electrode being disposed on the piezoelectric substrate, a first insulating layer disposed in a region other than a region where the at least one electrode is disposed, the thickness of the first insulating layer being substantially equal to that of the electrode, and a second insulating layer covering the electrode and the first insulating layer. The density of the electrode is at least about 1.5 times greater than that of the first insulating layer.

摘要翻译： 表面声波装置包括由LiNbO 3 3制成的压电基片，其具有至少约0.025的方形的机电耦合系数k，至少一个由密度高于其的金属制成的电极。 的Al或主要包含金属的合金，或由密度大于Al的金属或主要包含金属的合金的金属和其它金属构成的层压膜构成，所述电极设置在压电基板上，第一 绝缘层，其设置在除设置所述至少一个电极的区域以外的区域中，所述第一绝缘层的厚度与所述电极的厚度基本相等;以及覆盖所述电极和所述第一绝缘层的第二绝缘层。 电极的密度比第一绝缘层的密度高至少约1.5倍。

公开(公告)号：US07701113B2

公开(公告)日：2010-04-20

申请号：US12191451

申请日：2008-08-14

申请人： Shunsuke Kido ,  Takeshi Nakao ,  Yasuharu Nakai ,  Kenji Nishiyama ,  Michio Kadota

发明人： Shunsuke Kido ,  Takeshi Nakao ,  Yasuharu Nakai ,  Kenji Nishiyama ,  Michio Kadota

IPC分类号： H03H9/25

CPC分类号： H03H9/02834 ,  H03H3/10 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155 ,  Y10T29/49165

摘要： A surface acoustic wave device includes a piezoelectric substrate, at least one interdigital transducer (IDT) electrode provided on the piezoelectric substrate, and an insulator layer to improve a temperature characteristic arranged so as to cover the IDT electrode. When a surface of the insulator layer is classified into a first surface region under which the IDT electrode is positioned and a second surface region under which no IDT electrode is positioned, the surface of the insulator layer in at least one portion of the second surface region is higher than the surface of the insulator layer from the piezoelectric substrate in at least one portion of the first surface region by at least about 0.001λ, where the wavelength of an acoustic wave is λ.

摘要翻译： 表面声波装置包括压电基板，设置在压电基板上的至少一个叉指式换能器（IDT）电极和用于改善覆盖IDT电极的温度特性的绝缘体层。 当将绝缘体层的表面划分为IDT电极所在的第一表面区域和没有IDT电极的第二表面区域时，在第二表面区域的至少一部分中的绝缘体层的表面 在距离第一表面区域的至少一部分中的压电衬底的绝缘体层的表面高至少约0.001λ，其中声波的波长为λ。

公开(公告)号：US07569972B2

公开(公告)日：2009-08-04

申请号：US12234836

申请日：2008-09-22

申请人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

发明人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

IPC分类号： H01L41/08

CPC分类号： H03H9/02559

摘要： A surface acoustic wave device utilizing a Rayleigh wave includes a LiNbO3 substrate having Euler angles of (0°±5°, θ±5°, 0°±10°), an electrode which is disposed on the LiNbO3 substrate and which includes an IDT electrode primarily including Au, a first silicon oxide film disposed in a region other than the region in which the above-described electrode is disposed, the first silicon oxide film having a film thickness substantially equal to the thickness of the above-described electrode, and a second silicon oxide film arranged to cover the electrode and the first silicon oxide film, wherein the film thickness of the electrode is in the range of about 0.062λ to about 0.14λ, where λ represents the wavelength of a surface acoustic wave, and θ of the above-described Euler angles of (0°±5°, θ±5°, 0°±10°) is in the range satisfying the following Formula (1): θ=31.72−206.92×exp(−1×TAu/0.0138)  Formula (1) where TAu is a value of Au electrode film thickness normalized with the wavelength λ.

摘要翻译： 利用瑞利波的表面声波装置包括具有欧拉角（0°±5°，θ±5°，0°±10°）的LiNbO 3基板，设置在LiNbO 3基板上的电极，其包括IDT 主要包括Au的电极，设置在除了上述电极的区域以外的区域中的第一氧化硅膜，第一氧化硅膜的膜厚度基本上等于上述电极的厚度，以及 布置成覆盖电极和第一氧化硅膜的第二氧化硅膜，其中电极的膜厚度在约0.062λ至约0.14λ的范围内，其中λ表示声表面波的波长，θ表示 （0°±5°，θ±5°，0°±10°）的上述欧拉角在满足下列公式（1）的范围内：<？在线公式描述=“In- 线公式“end =”lead“？> theta = 31.72-206.92xexp（-1×TAu / 0.0138）式（1）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中TAu是用波长λ标准化的Au电极膜厚度的值。

公开(公告)号：US20080309192A1

公开(公告)日：2008-12-18

申请号：US12203393

申请日：2008-09-03

申请人： Takeshi Nakao ,  Yasuharu Nakai ,  Michio Kadota

发明人： Takeshi Nakao ,  Yasuharu Nakai ,  Michio Kadota

IPC分类号： H03H9/25 ,  H03H9/15

CPC分类号： H03H9/02818 ,  H03H9/02992 ,  H03H9/1452

摘要： In an acoustic wave resonator, an IDT electrode is provided on a piezoelectric substrate. The IDT electrode is apodization-weighted such that a plurality of maximum values of cross widths are provided in acoustic wave propagation directions. Alternatively, in apodization weighting, weighting is applied such that at least one of a pair of envelopes located at outer side portions of the IDT electrode in directions substantially perpendicular to acoustic wave propagation directions includes a plurality of angled envelope portions angled from a central portion of the IDT electrode toward an outer side portion of the IDT electrode in a direction substantially perpendicular to the acoustic wave propagation directions.

摘要翻译： 在声波谐振器中，在压电基板上设置有IDT电极。 IDT电极被变迹加权，使得在声波传播方向上提供多个最大交叉宽度值。 或者，在变迹加权中，施加加权，使得位于IDT电极的外侧部分的大致垂直于声波传播方向的方向上的一对包络中的至少一个包括多个成角度的包络部分，该包络部分从 IDT电极朝向与声波传播方向大致正交的方向朝向IDT电极的外侧部分。

公开(公告)号：US07418772B2

公开(公告)日：2008-09-02

申请号：US11743793

申请日：2007-05-03

申请人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

发明人： Kenji Nishiyama ,  Takeshi Nakao ,  Michio Kadota

IPC分类号： H01L41/22 ,  H01L41/00

CPC分类号： H03H9/02929 ,  H03H3/10 ,  H03H9/02559 ,  H03H9/14538 ,  Y10T29/42 ,  Y10T29/49016 ,  Y10T29/4913 ,  Y10T29/49135 ,  Y10T29/49155

摘要： In a manufacturing method for a SAW apparatus a first insulating layer is formed on the entire surface of a piezoelectric LiTaO3 substrate. By using a resist pattern used for forming an IDT electrode, the first insulating layer in which the IDT electrode is to be formed is removed. An electrode film made of a metal having a density higher than Al or an alloy primarily including such a metal is disposed in the area in which the first insulating layer is removed so as to form the IDT electrode. The resist pattern remaining on the first insulating layer is removed. A second insulating layer is formed to cover the first insulating layer and the IDT electrode.

摘要翻译： 在SAW器件的制造方法中，在压电LiTaO 3衬底的整个表面上形成第一绝缘层。 通过使用用于形成IDT电极的抗蚀剂图案，去除其中将形成IDT电极的第一绝缘层。 在除去第一绝缘层的区域中设置由密度高于Al的金属或主要包含金属的合金制成的电极膜，以形成IDT电极。 去除残留在第一绝缘层上的抗蚀剂图案。 形成第二绝缘层以覆盖第一绝缘层和IDT电极。