摘要:
A memory device, a host device, and a memory system enable real-time recording of a plurality of files of data while preventing the buffer size of a host device from increasing. A memory device (1) has first and second data write modes. A host device (2) uses the second data write mode when recording a plurality of files of data. In accordance with a command provided from the host device (2), the memory device (1) relocates data that has been written in the second data write mode in a manner that the data is arranged in the same state as when the data is written in the first data write mode.
摘要:
When multiple pieces of content data are being recorded continuously to a nonvolatile storage device having page cache function, a preparation time before starting next content data recording is reduced. When a cache releasing section of a nonvolatile storage device (1) receives cache releasing from an access device (2), it releases addresses included in one logical block among multiple addresses which are cache objects at the same time. Further, the nonvolatile storage device (1) includes a cache information outputting section which outputs information regarding a time period required for releasing addresses which are cache objects outside, and the access device (2) refers to the information to select the address to be an object of releasing.
摘要:
The nonvolatile memory device prevents data writing from temporarily slowing down significantly in the middle of writing data to a block when an access device writes all the data in the block in units of a smaller size than the block. The nonvolatile memory device (100) comprises a memory controller (110) including an interface unit (101) configured to receive a first command that identifies a first write range for writing data, and a second command that identifies a second write range that is a part of the first write range and orders to write data to the second write range, an address management unit (106) configured to determine, before data is written into a nonvolatile memory, a new block for writing data to the first write range based on the first command, and a read/write control unit (103) configured to write data to the new block in response to the second command.
摘要:
An object of the present invention is to realize reduction in an area of an output stage driver in an interface circuit that switches between two transmission systems. The interface circuit has two driver circuits and a drive control circuit that can switch between two driving systems that are a voltage driving system and a current driving system. The two driver circuits are connected to a power supply potential via the drive control circuit. Two input signals and inverted logic signals of the input signals are inputted via a selection circuit. According to a control signal inputted into the drive control circuit, the interface circuit switches between the voltage-driving type single-ended transmission system and current driving type differential transmission system.
摘要:
When a control unit (160) in a storage device (100) detects that a write end command or a data amount to be written has been transmitted from a host device (110), the control unit (160) saves control information required for writing data in a control information save memory (142). The control unit (160) also saves data which has not been written in storage medium into a buffer save memory (152) from a data buffer (151) and releases the busy state for the host device (110). The control unit (160) writes the saved data into a storage medium (120). Even if the power is turned OFF before completion of write, write can be performed into the storage medium (120) by using the saved data when the power is turned ON next time.
摘要:
A nonvolatile storage device includes a controller and a nonvolatile memory. The controller has: a logical-physical address conversion part for converting a logical address designated by a host device into a physical address; and a boot code address conversion part for converting boot code address information designated by the host device into a physical address. After the power-on and before the logical-physical address conversion part becomes usable, a boot code is read from a part of region which can be accessed by designating a logical address from the host device by designating the boot code address information from the outside. Thus, it is possible to rapidly start the nonvolatile memory system after the power-on. In the state where the logical-physical address conversion part can be used, data-reading and data-writing are carried out by designating a logical address from the host device.
摘要:
When an access device accesses a nonvolatile memory device, the nonvolatile memory device or the access device detects or calculates a temperature T of the nonvolatile memory device. A temperature-adaptive control part of the nonvolatile memory device controls an access rate to a nonvolatile memory on the basis of the temperature T. Accordingly, the control part controls the rate so that the temperature T of the nonvolatile memory devices cannot exceed a limit temperature Trisk. In this manner, a nonvolatile memory system can eliminate a risk of a burn when ejecting the semiconductor memory device and can read and write data at a high speed.
摘要:
An object of the present invention is to realize reduction in an area of an output stage driver in an interface circuit that switches between two transmission systems. The interface circuit has two driver circuits and a drive control circuit that can switch between two driving systems that are a voltage driving system and a current driving system. The two driver circuits are connected to a power supply potential via the drive control circuit. Two input signals and inverted logic signals of the input signals are inputted via a selection circuit. According to a control signal inputted into the drive control circuit, the interface circuit switches between the voltage-driving type single-ended transmission system and current driving type differential transmission system.
摘要:
In a storage having a nonvolatile RAM of destructive read type, the number of restorations attributed to data read from the nonvolatile RAM is decreased, and the overall life of the storage is prolonged. In a storage having a nonvolatile RAM of destructive read type and a volatile RAM and holding the same data in the nonvolatile and volatile RAMs, data is read out of the volatile RAM in reading and data is written in both volatile and nonvolatile RAMs in writing.
摘要:
A composition containing a nanosubstance is provided. Since the composition includes a nanosubstance (a), a (meth)acrylate compound (b) including a polar group, and a solvent (c)/polymerizable monomer (i-1), it is capable of being dispersed or solubilized in various solvents such as organic solvents, hydrous organic solvents and in polymerizable monomers without impairing characteristics of the nanosubstance itself wherein the nanosubstance neither separates out nor aggregates during a long-term storage, the composition being excellent in conductivity, film-forming property and moldability and capable of applying to or coating a substrate by a simple method. A coated film or cured film of a composite formed by the composition on at least one surface of the substrate shows high transparency, and the composite is excellent in water resistance, weatherability and hardness.