公开(公告)号：US20230066863A1

公开(公告)日：2023-03-02

申请号：US17459846

申请日：2021-08-27

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Juane Li ,  Fangfang Zhu ,  Seungjune Jeon ,  Yueh-Hung Chen

IPC: G06F11/10 ,  G06F11/30 ,  G06F12/02 ,  G06F3/06

Abstract: A request is received to program host data to a memory device of a memory sub-system. The host data is associated with a logical address. A redundancy factor that corresponds to the logical address associated with the host data is obtained. A first physical address associated with a first set of cells of the memory device and a second physical address associated with a second set of cells of the memory device are determined based on the redundancy factor. The first set of memory cells is to store the host data and the second set of memory cells is to store redundancy metadata associated with the host data. The host data is programmed to the first set of memory cells. The redundancy metadata associated with the host data is programmed to the second set of memory cells.

公开(公告)号：US20230051408A1

公开(公告)日：2023-02-16

申请号：US17946612

申请日：2022-09-16

Applicant: Micron Technology, Inc.

Inventor： Charles See Yeung Kwong ,  Seungjune Jeon

IPC: G11C11/406 ,  G11C11/4096 ,  G11C29/42

Abstract: A memory access operation performed on a first memory unit of a memory device is detected. A counter associated with the first memory unit is modified. It is determined that the counter satisfies a threshold criterion, wherein the threshold criterion is based on a random or pseudo-random number within a margin of an average number of memory access operations. A refresh operation is performed on a second memory unit.

公开(公告)号：US20220415430A1

公开(公告)日：2022-12-29

申请号：US17902195

申请日：2022-09-02

Applicant: Micron Technology, Inc.

Inventor： Seungjune Jeon

IPC: G11C29/00 ,  G06F11/14 ,  G11C16/34 ,  G06F11/10 ,  G11C29/52

Abstract: An apparatus includes an error read flow component resident on a memory sub-system. The error read flow component can cause performance of a plurality of read recovery operations on a group of memory cells that are programmed or read together, or both. The error read flow component can determine whether a particular read recovery operation invoking the group of memory cells was successful. The error read flow component can further cause a counter corresponding to each of the plurality of read recovery operations to be incremented in response to a determination that the particular read recovery operation invoking the group of memory cells was successful.

公开(公告)号：US20220334772A1

公开(公告)日：2022-10-20

申请号：US17856543

申请日：2022-07-01

Applicant: Micron Technology, Inc.

Inventor： Seungjune Jeon ,  Jiangli Zhu

IPC: G06F3/06 ,  G06F11/10

Abstract: A method includes providing, via a command, a request of enablement of a media management operation to a memory sub-system. The method further includes providing, via the command, an indication of one of a plurality of write types to the media management operation to the memory sub-system. The media management operation can be performed using the indicated write type in response to receipt of the command.

公开(公告)号：US11437119B2

公开(公告)日：2022-09-06

申请号：US16997500

申请日：2020-08-19

Applicant: Micron Technology, Inc.

Inventor： Seungjune Jeon

IPC: G06F11/14 ,  G11C29/00 ,  G11C29/52 ,  G11C16/34 ,  G06F11/10

Abstract: An apparatus includes an error read flow component resident on a memory sub-system. The error read flow component can cause performance of a plurality of read recovery operations on a group of memory cells that are programmed or read together, or both. The error read flow component can determine whether a particular read recovery operation invoking the group of memory cells was successful. The error read flow component can further cause a counter corresponding to each of the plurality of read recovery operations to be incremented in response to a determination that the particular read recovery operation invoking the group of memory cells was successful.

公开(公告)号：US20220058071A1

公开(公告)日：2022-02-24

申请号：US16997562

申请日：2020-08-19

Applicant: Micron Technology, Inc.

Inventor： Seungjune Jeon ,  Tingjun Xie

IPC: G06F11/07 ,  G06F11/30 ,  G06F11/34

Abstract: A method includes monitoring, by a processing device, error characteristics of a particular memory component among a plurality of memory components of a memory sub-system and detecting, by the processing device and based on the monitored error characteristics, an error characteristic associated with the particular memory component that exhibits a value that is greater than or equal to a threshold error characteristic value. The method can further include causing, by the processing device, a counter coupled to the plurality of memory components to be updated in response to the detection that the particular memory component exhibits the value of the error characteristic that is greater than or equal to the threshold error characteristic value.

公开(公告)号：US20220057964A1

公开(公告)日：2022-02-24

申请号：US16997426

申请日：2020-08-19

Applicant: Micron Technology, Inc.

Inventor： Seungjune Jeon ,  Jiangli Zhu

IPC: G06F3/06

Abstract: A method includes performing a memory operation to access memory cells of a memory sub-system. The method can further include determining, for the memory operation, a quantity of memory cells available to be accessed during performance of the memory operation. The method can further include determining that a quantity of memory cells that are accessed during performance of the memory operation comprises fewer than the quantity of memory cells available to be accessed. The method can further include incrementing a counter in response to the determination that the quantity of memory cells accessed is fewer than the quantity of memory cells available to be accessed.

公开(公告)号：US20210295900A1

公开(公告)日：2021-09-23

申请号：US17339047

申请日：2021-06-04

Applicant: Micron Technology, Inc.

Inventor： Tingjun Xie ,  Seungjune Jeon ,  Zhengang Chen ,  Zhenlei Shen ,  Charles See Yeung Kwong

IPC: G11C11/406 ,  G11C11/16

Abstract: A media management operation can be performed at a memory sub-system at a current frequency. An operating characteristic associated with the memory sub-system can be identified. The operating characteristic can reflect at least one of a write count, a bit error rate, or a read-retry trigger rate. A determination can be made as to whether the identified operating characteristic satisfies an operating characteristic criterion. In response to determining that the operating characteristic satisfies the characteristic criterion, the media management operation can be performed at a different frequency relative to the current frequency.

公开(公告)号：US20210183454A1

公开(公告)日：2021-06-17

申请号：US17171486

申请日：2021-02-09

Applicant: Micron Technology, Inc.

Inventor： Seungjune Jeon ,  Zhenming Zhou ,  Zhenlei Shen

IPC: G11C16/34 ,  G11C16/10 ,  G06F9/30 ,  G11C16/26 ,  G11C29/42

Abstract: A request to read data at the memory device is received. A first read operation is performed to read the data at the memory device using a first read threshold voltage. The data read at the memory device using the first read threshold voltage is determined to be associated with a first unsuccessful correction of an error. Responsive to determining that the data read at the memory device using the first read threshold voltage is associated with the first unsuccessful correction of the error, a second read threshold voltage is stored at a register to replace a preread threshold voltage previously stored at the register that is associated with the memory device. The first preread threshold voltage was previously used to perform a preread operation at the memory device. A second read operation to read the data at the memory device is performed using the second read threshold voltage.