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公开(公告)号：US12147708B2
公开(公告)日：2024-11-19
申请号：US18099615
申请日：2023-01-20
Applicant: Micron Technology, Inc.
Inventor： Seungjune Jeon , Jiangli Zhu
IPC: G06F3/06
Abstract: A method includes performing a memory operation to access memory cells of a memory sub-system. The method can further include determining, for the memory operation, a quantity of memory cells available to be accessed during the performance of the memory operation. The method can further include determining that a quantity of memory cells that are accessed during the performance of the memory operation comprises fewer than the quantity of memory cells available to be accessed. The method can further include incrementing a counter in response to the determination that the quantity of memory cells accessed is fewer than the quantity of memory cells available to be accessed.
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公开(公告)号：US20240045595A1
公开(公告)日：2024-02-08
申请号：US17880213
申请日：2022-08-03
Applicant: Micron Technology, Inc.
Inventor： Li-Te Chang , Murong Lang , Charles See Yeung Kwong , Vamsi Pavan Rayaprolu , Seungjune Jeon , Zhenming Zhou
CPC classification number: G06F3/0616 , G06F3/0653 , G06F3/0679 , G06N20/00
Abstract: A processing device in a memory sub-system determines whether a media endurance metric associated with a memory block of a memory device satisfies one or more conditions. In response to the one or more conditions being satisfied, one or more read margin levels corresponding to a page type associated with the memory device are determined. A machine learning model is applied to the one or more read margin levels to generate a margin prediction value based on the page type and a wordline group associated with the memory device. Based on the margin prediction value, the memory device is assigned to a selected bin of a set of bins. A media scan operation is executed on the memory device in accordance with a scan frequency associated with the selected bin.
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公开(公告)号：US11860732B2
公开(公告)日：2024-01-02
申请号：US17459846
申请日：2021-08-27
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Juane Li , Fangfang Zhu , Seungjune Jeon , Yueh-Hung Chen
CPC classification number: G06F11/1068 , G06F3/0619 , G06F3/0659 , G06F3/0679 , G06F11/3037 , G06F12/0238 , G06F2212/7201
Abstract: A request is received to program host data to a memory device of a memory sub-system. The host data is associated with a logical address. A redundancy factor that corresponds to the logical address associated with the host data is obtained. A first physical address associated with a first set of cells of the memory device and a second physical address associated with a second set of cells of the memory device are determined based on the redundancy factor. The first set of memory cells is to store the host data and the second set of memory cells is to store redundancy metadata associated with the host data. The host data is programmed to the first set of memory cells. The redundancy metadata associated with the host data is programmed to the second set of memory cells.
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公开(公告)号：US11837303B2
公开(公告)日：2023-12-05
申请号：US18094554
申请日：2023-01-09
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Seungjune Jeon , Tingjun Xie
CPC classification number: G11C29/18 , G11C29/12005 , G11C29/44 , G11C29/50004
Abstract: A predefined data pattern is written using a plurality of values of a memory access parameter. A corresponding value of a data state metric associated with each value of a plurality of values of the memory access operation parameter is measured. An optimal value of the memory access operation parameter is selected from the plurality of values of the memory access operation parameter.
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公开(公告)号：US11763896B2
公开(公告)日：2023-09-19
申请号：US17951593
申请日：2022-09-23
Applicant: Micron Technology, Inc.
Inventor： Seungjune Jeon , Zhenming Zhou , Zhenlei Shen
CPC classification number: G11C16/34 , G06F9/30101 , G11C16/10 , G11C16/26 , G11C29/42
Abstract: A request to read data at the memory device is received. A first read operation is performed to read the data at the memory device using a first read threshold voltage. The data read at the memory device using the first read threshold voltage is determined to be associated with a first unsuccessful correction of an error. Responsive to determining that the data read at the memory device using the first read threshold voltage is associated with the first unsuccessful correction of the error, a second read threshold voltage is stored at a register to replace a preread threshold voltage previously stored at the register that is associated with the memory device. The first preread threshold voltage was previously used to perform a preread operation at the memory device. A second read operation to read the data at the memory device is performed using the second read threshold voltage.
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Patent Agency Ranking
公开(公告)号：US20230168812A1
公开(公告)日：2023-06-01
申请号：US18103133
申请日：2023-01-30
Applicant: Micron Technology, Inc.
Inventor： Zhenming Zhou , Seungjune Jeon , Zhenlei Shen
CPC classification number: G06F3/0616 , G06F3/0652 , G06F3/0659 , G06F3/0679 , G06F7/588 , G06F12/10 , G06F12/0246 , G06F2212/1036 , G06F2212/7211
Abstract: Systems and methods are disclosed including a processing device operatively coupled to memory device. The processing device performs operations comprising responsive to receiving a memory access command, determining a portion of the memory device that is referenced by a logical address specified by the memory access command; determining an endurance factor associated with the portion; and modifying, based on a value derived from the endurance factor, a media management metric associated with the portion of the memory device.
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公开(公告)号：US11615830B2
公开(公告)日：2023-03-28
申请号：US17339047
申请日：2021-06-04
Applicant: Micron Technology, Inc.
Inventor： Tingjun Xie , Seungjune Jeon , Zhengang Chen , Zhenlei Shen , Charles See Yeung Kwong
IPC: G11C11/00 , G11C11/406 , G11C11/16
Abstract: A media management operation can be performed at a memory sub-system at a current frequency. An operating characteristic associated with the memory sub-system can be identified. The operating characteristic can reflect at least one of a write count, a bit error rate, or a read-retry trigger rate. A determination can be made as to whether the identified operating characteristic satisfies an operating characteristic criterion. In response to determining that the operating characteristic satisfies the characteristic criterion, the media management operation can be performed at a different frequency relative to the current frequency.
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公开(公告)号：US20230063498A1
公开(公告)日：2023-03-02
申请号：US17460112
申请日：2021-08-27
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Tingjun Xie , Seungjune Jeon , Zhenlei Shen , Zhenming Zhou
IPC: G06F3/06
Abstract: A plurality of memory device life metrics are determined, where one of the plurality of memory device life metrics comprises a read count metric that specifies a number of read operations performed on the memory device. A plurality of normalized metric values are calculated, where each of the normalized metric values is based on a ratio of a respective memory device life metric to a respective lifetime target value associated with the respective memory device life metric. A normalized metric value that satisfies a selection criterion is identified from the plurality of normalized metric values. The identified normalized metric value corresponds to an amount of used device life of the memory device. An amount of remaining device life of the memory device is determined based on the identified normalized metric value. An indication of the amount of remaining device life is provided to a host system.
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公开(公告)号：US11557362B2
公开(公告)日：2023-01-17
申请号：US17302215
申请日：2021-04-27
Applicant: Micron Technology, Inc.
Inventor： Seungjune Jeon , Tingjun Xie
Abstract: A corresponding value of a data state metric associated with each of a value of a plurality of values of a memory access operation parameter used in one or more memory access operation is measured. An optimal metric value based on the measured values of the predetermined data state metric is determined. An optimal value of the memory access operation parameter from the plurality of values of the memory access operation parameter is selected.
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公开(公告)号：US11379156B2
公开(公告)日：2022-07-05
申请号：US16997303
申请日：2020-08-19
Applicant: Micron Technology, Inc.
Inventor： Seungjune Jeon , Jiangli Zhu
Abstract: A method includes providing, via a command, a request of enablement of a media management operation to a memory sub-system. The method further includes providing, via the command, an indication of one of a plurality of write types to the media management operation to the memory sub-system. The media management operation can be performed using the indicated write type in response to receipt of the command.
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