公开(公告)号：US20130260499A1

公开(公告)日：2013-10-03

申请号：US13992613

申请日：2011-12-07

申请人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

发明人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC分类号： H01L51/00

CPC分类号： H01L51/0008 ,  C23C14/24 ,  C23C14/243 ,  C23C14/246 ,  C23C14/568 ,  H01L27/3211 ,  H01L51/56

摘要： A vapor deposition device (50) in accordance with the present invention is a vapor deposition device for forming a film on a film formation substrate (60), including: a vapor deposition source (91) which has a plurality of injection holes (92) from which vapor deposition particles are to be injected towards the film formation substrate (60), the plurality of injection holes (92) being arranged in a line or in a plurality of lines; a vapor deposition crucible (93) for supplying the vapor deposition particles to the vapor deposition source (91) via a pipe (94), the pipe being connected to the vapor deposition source (91) on a side where one end of the line(s) of the plurality of injection holes (92) is located; moving means for moving the film formation substrate (60) relative to the vapor deposition source(s) (91); and a rotation mechanism (100) for rotating the vapor deposition source (91).

摘要翻译： 根据本发明的蒸镀装置（50）是在成膜基板（60）上形成膜的蒸镀装置，其特征在于，包括：具有多个喷射孔（92）的蒸镀源（91） 从该气相沉积粒子向成膜基板（60）喷射，多个喷射孔（92）以一行或多条线排列; 一种用于通过管道（94）将气相沉积颗粒供应到气相沉积源（91）的气相沉积坩埚（93），该管道连接到气相淀积源（91）的一端 （92）的位置; 用于相对于气相沉积源（91）移动成膜衬底（60）的移动装置; 以及用于旋转气相沉积源（91）的旋转机构（100）。

公开(公告)号：US20130252364A1

公开(公告)日：2013-09-26

申请号：US13989704

申请日：2011-12-15

申请人： Shinichi Kawato ,  Satoshi Inoue ,  Tohru Sonoda

发明人： Shinichi Kawato ,  Satoshi Inoue ,  Tohru Sonoda

IPC分类号： H01L51/56

CPC分类号： H01L51/56 ,  C23C14/044 ,  C23C14/12 ,  C23C14/562 ,  C23C16/45578 ,  H01L27/3244 ,  H01L51/0011

摘要： A vapor deposition source (60), a limiting plate unit (80), and a vapor deposition mask (70) are disposed in this order. The limiting plate unit includes a plurality of limiting plates (81) disposed along a first direction. At least a portion of surfaces (83) defining a limiting space (82) of the limiting plate unit and surfaces (84) of the limiting plate unit opposing the vapor deposition source is constituted by at least one outer surface member (110, 120) capable of attaching to and detaching from a base portion (85). Accordingly, a vapor deposition device that is capable of forming a coating film in which edge blur is suppressed on a large-sized substrate and that has excellent maintenance performance can be obtained.

摘要翻译： 依次设置气相沉积源（60），限制板单元（80）和气相沉积掩模（70）。 限位板单元包括沿着第一方向设置的多个限位板（81）。 限定板单元的限制空间（82）的表面的至少一部分和与气相沉积源相对的限制板单元的表面（84）由至少一个外表面构件（110,120）构成， 能够附接到基部（85）并从基部（85）脱离。 因此，可以获得能够形成在大尺寸基板上抑制边缘模糊并且具有优异的维护性能的涂膜的蒸镀装置。

公开(公告)号：US20130196454A1

公开(公告)日：2013-08-01

申请号：US13824859

申请日：2011-10-11

申请人： Satoshi Inoue ,  Shinichi Kawato ,  Tohru Sonoda

发明人： Satoshi Inoue ,  Shinichi Kawato ,  Tohru Sonoda

IPC分类号： H01L21/66

CPC分类号： H01L22/20 ,  C23C14/042 ,  C23C14/24 ,  C23C14/54 ,  H01L27/3211 ,  H01L51/001 ,  H01L2924/0002 ,  H01L2924/00

摘要： A coating film (90) is formed by causing vapor deposition particles (91) discharged from a vapor deposition source opening (61) of a vapor deposition source (60) to pass through a space between a plurality of control plates (81) of a control plate unit (80) and a mask opening (71) of a vapor deposition mask in this order and adhere to a substrate, while the substrate (10) is moved relative to the vapor deposition mask (70) in a state in which the substrate (10) and the vapor deposition mask (70) are spaced apart at a fixed interval. A difference in the amount of thermal expansion between the vapor deposition source and the control plate unit is detected and corrected. It is thereby possible to form, at a desired position on a large-sized substrate, the coating film in which edge blur and variations in the edge blur are suppressed.

摘要翻译： 通过使从气相沉积源（60）的气相沉积源开口（61）排出的气相沉积颗粒（91）通过多个控制板（81）之间的空间，形成涂膜（90） 控制板单元（80）和气相沉积掩模的掩模开口（71），并且在基板（10）相对于蒸镀掩模（70）移动的同时粘附到基板上， 衬底（10）和气相沉积掩模（70）以固定的间隔隔开。 检测并校正蒸镀源与控制板单元之间的热膨胀量的差异。 因此，可以在大尺寸基板的期望位置形成抑制边缘模糊和边缘模糊变化的涂膜。

公开(公告)号：US20130181209A1

公开(公告)日：2013-07-18

申请号：US13824617

申请日：2011-09-15

申请人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue

发明人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue

IPC分类号： H01L33/44

CPC分类号： H01L33/44 ,  C23C14/042 ,  C23C14/12 ,  C23C14/24 ,  H01L27/3211 ,  H01L51/0008 ,  H01L51/0011 ,  H01L51/56 ,  H05B33/10

摘要： A coating film (90) is formed by causing vapor deposition particles (91) to pass through a mask opening (71) of a vapor deposition mask and adhere to a substrate, the vapor deposition particles (91) being discharged from a vapor deposition source opening (61) of a vapor deposition source (60) while the substrate (10) is moved relative to the vapor deposition mask (70) in a state in which the substrate (10) and the vapor deposition mask (70) are spaced apart at a fixed interval. When a direction that is orthogonal to a normal line direction of the substrate and is orthogonal to a relative movement direction of the substrate is defined as a first direction, and the normal line direction of the substrate is defined as a second direction, a plurality of control plate columns are disposed in the first direction between the vapor deposition source opening and the vapor deposition mask, each control plate column including a plurality of control plates (80a and 80b) arranged along the second direction. With this configuration, a coating film in which blur at both edges of the coating film and variations in the blur are suppressed can be formed on a large-sized substrate.

摘要翻译： 通过使气相沉积粒子（91）通过气相沉积掩模的掩模开口（71）并附着到基底上，形成涂膜（90），蒸镀颗粒（91）从气相沉积源 在衬底（10）和气相沉积掩模（70）间隔开的状态下，相对于气相沉积掩模（70）移动衬底（10）的同时，蒸镀源（60）的开口（61） 以固定的间隔。 当将与基板的法线方向正交并与基板的相对移动方向正交的方向定义为第一方向时，将基板的法线方向定义为第二方向， 控制板列在蒸镀源开口和蒸镀掩模之间沿第一方向配置，每个控制板列包括沿第二方向配置的多个控制板（80a，80b）。 利用这种构造，可以在大尺寸的基板上形成其中涂覆膜的两边的模糊和模糊的变化被抑制的涂膜。

公开(公告)号：US20130059063A1

公开(公告)日：2013-03-07

申请号：US13696585

申请日：2011-05-02

申请人： Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda ,  Satoshi Inoue

发明人： Shinichi Kawato ,  Nobuhiro Hayashi ,  Tohru Sonoda ,  Satoshi Inoue

IPC分类号： H05B33/10 ,  C23C16/04

CPC分类号： H01L51/001 ,  C23C14/042 ,  C23C14/12 ,  C23C14/24 ,  H01L27/3211 ,  H01L51/56

摘要： A vapor deposition source (60), a plurality of limiting plates (81) and a vapor deposition mask (70) are disposed in this order. A substrate spaced apart from the vapor deposition mask at a fixed interval is moved relative to the vapor deposition mask. Vapor deposition particles (91) discharged from vapor deposition source openings (61) of the vapor deposition source pass through between neighboring limiting plates, pass through mask openings (71) formed in the vapor deposition mask, and adhere to the substrate, whereby coating films (90) are formed. The limiting plates limit the incidence angle of the vapor deposition particles that enter the mask openings, as viewed in the relative movement direction of the substrate. In this way, an organic EL element can be formed on a large-sized substrate without increasing the pixel pitch or reducing the aperture ratio.

摘要翻译： 蒸镀源（60），多个限制板（81）和气相沉积掩模（70）按此顺序设置。 以固定间隔与蒸镀掩模间隔开的基板相对于蒸镀掩模移动。 从气相沉积源的蒸镀源开口（61）排出的蒸镀颗粒（91）通过相邻的限制板之间通过形成在蒸镀掩模中的掩模开口（71），并附着在基板上， （90）。 限制板限制了进入掩模开口的气相沉积颗粒的入射角，如在基板的相对移动方向上所看到的。 以这种方式，可以在大尺寸基板上形成有机EL元件，而不增加像素间距或降低开口率。

公开(公告)号：US09093646B2

公开(公告)日：2015-07-28

申请号：US13992613

申请日：2011-12-07

申请人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

发明人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue ,  Satoshi Hashimoto

IPC分类号： H01L51/00 ,  C23C14/24 ,  C23C14/56 ,  H01L27/32 ,  H01L51/56

CPC分类号： H01L51/0008 ,  C23C14/24 ,  C23C14/243 ,  C23C14/246 ,  C23C14/568 ,  H01L27/3211 ,  H01L51/56

摘要： A vapor deposition device (50) in accordance with the present invention is a vapor deposition device for forming a film on a film formation substrate (60), including: a vapor deposition source (91) which has a plurality of injection holes (92) from which vapor deposition particles are to be injected towards the film formation substrate (60), the plurality of injection holes (92) being arranged in a line or in a plurality of lines; a vapor deposition crucible (93) for supplying the vapor deposition particles to the vapor deposition source (91) via a pipe (94), the pipe being connected to the vapor deposition source (91) on a side where one end of the line(s) of the plurality of injection holes (92) is located; moving means for moving the film formation substrate (60) relative to the vapor deposition source(s) (91); and a rotation mechanism (100) for rotating the vapor deposition source (91).

摘要翻译： 根据本发明的蒸镀装置（50）是在成膜基板（60）上形成膜的蒸镀装置，其特征在于，包括：具有多个喷射孔（92）的蒸镀源（91） 从该气相沉积粒子向成膜基板（60）喷射，多个喷射孔（92）以一行或多条线排列; 一种用于通过管道（94）将气相沉积颗粒供应到气相沉积源（91）的气相沉积坩埚（93），该管道连接到气相淀积源（91）的一端 （92）的位置; 用于相对于气相沉积源（91）移动成膜衬底（60）的移动装置; 以及用于旋转气相沉积源（91）的旋转机构（100）。

公开(公告)号：US08882918B2

公开(公告)日：2014-11-11

申请号：US13876573

申请日：2011-09-26

申请人： Shinichi Kawato ,  Satoshi Inoue ,  Tohru Sonoda

发明人： Shinichi Kawato ,  Satoshi Inoue ,  Tohru Sonoda

IPC分类号： C23C16/00 ,  C23C14/24 ,  C23C14/12 ,  H05B33/10 ,  C23C14/04 ,  C23C14/56 ,  H01L51/00

CPC分类号： H05B33/10 ,  C23C14/042 ,  C23C14/12 ,  C23C14/24 ,  C23C14/562 ,  H01L51/001

摘要： A vapor deposition apparatus (50) includes: a mask unit (54) including a vapor deposition source (70), a vapor deposition mask (60), and a mask holding member (80); a substrate holder (52); and at least either a mask unit moving mechanism (55) or a substrate moving mechanism (53), with a roller (83) provided in a surface of one of (A) the substrate holder (52) and (B) the mask holding member (80) which faces the other one of (A) the substrate holder (52) and (B) the mask holding member (80).

摘要翻译： 气相沉积装置（50）包括：包括气相沉积源（70），气相沉积掩模（60）和掩模保持构件（80）的掩模单元（54）; 衬底保持器（52）; 以及至少一个掩模单元移动机构（55）或基板移动机构（53），其中设置在（A）基板保持器（52）和（B）中的一个的表面中的辊（83） （A）衬底保持器（52）和（B）掩模保持构件（80）中的另一个的构件（80）。

公开(公告)号：US08859438B2

公开(公告)日：2014-10-14

申请号：US13824617

申请日：2011-09-15

申请人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue

发明人： Tohru Sonoda ,  Shinichi Kawato ,  Satoshi Inoue

IPC分类号： H01L21/31 ,  H05B33/10 ,  H01L33/44 ,  C23C14/24 ,  C23C14/04 ,  C23C14/12 ,  H01L27/32 ,  H01L51/00 ,  H01L51/56

CPC分类号： H01L33/44 ,  C23C14/042 ,  C23C14/12 ,  C23C14/24 ,  H01L27/3211 ,  H01L51/0008 ,  H01L51/0011 ,  H01L51/56 ,  H05B33/10

摘要： A coating film (90) is formed by causing vapor deposition particles (91) to pass through a mask opening (71) of a vapor deposition mask and adhere to a substrate, the vapor deposition particles (91) being discharged from a vapor deposition source opening (61) of a vapor deposition source (60) while the substrate (10) is moved relative to the vapor deposition mask (70) in a state in which the substrate (10) and the vapor deposition mask (70) are spaced apart at a fixed interval. When a direction that is orthogonal to a normal line direction of the substrate and is orthogonal to a relative movement direction of the substrate is defined as a first direction, and the normal line direction of the substrate is defined as a second direction, a plurality of control plate columns are disposed in the first direction between the vapor deposition source opening and the vapor deposition mask, each control plate column including a plurality of control plates (80a and 80b) arranged along the second direction. With this configuration, a coating film in which blur at both edges of the coating film and variations in the blur are suppressed can be formed on a large-sized substrate.

摘要翻译： 通过使气相沉积粒子（91）通过气相沉积掩模的掩模开口（71）并附着到基底上，形成涂膜（90），蒸镀颗粒（91）从气相沉积源 在衬底（10）和气相沉积掩模（70）间隔开的状态下，相对于气相沉积掩模（70）移动衬底（10）的同时，蒸镀源（60）的开口（61） 以固定的间隔。 当将与基板的法线方向正交并与基板的相对移动方向正交的方向定义为第一方向时，将基板的法线方向定义为第二方向， 控制板列在蒸镀源开口和蒸镀掩模之间沿第一方向配置，每个控制板列包括沿第二方向配置的多个控制板（80a，80b）。 利用这种构造，可以在大尺寸的基板上形成其中涂覆膜的两边的模糊和模糊的变化被抑制的涂膜。

公开(公告)号：US08841142B2

公开(公告)日：2014-09-23

申请号：US13989053

申请日：2011-12-13

申请人： Shinichi Kawato ,  Satoshi Inoue ,  Tohru Sonoda

发明人： Shinichi Kawato ,  Satoshi Inoue ,  Tohru Sonoda

IPC分类号： H01L51/56 ,  H01L51/00 ,  H01L21/66 ,  C23C14/12 ,  C23C14/04 ,  C23C14/24

CPC分类号： H01L22/10 ,  C23C14/042 ,  C23C14/12 ,  C23C14/243 ,  H01L51/0011 ,  H01L51/56 ,  H01L2924/0002 ,  H01L2924/00

摘要： A coating film (90) is formed by causing vapor deposition particles (91) discharged from a vapor deposition source opening (61) of a vapor deposition source (60) to pass through a space (82) between a plurality of limiting plates (81) of a limiting plate unit (80) and a mask opening (71) of a vapor deposition mask in this order and adhere to a substrate while the substrate is moved relative to the vapor deposition mask in a state in which the substrate (10) and the vapor deposition mask (70) are spaced apart at a fixed interval. It is determined whether or not it is necessary to correct the position of at least one of the plurality of limiting plates in the X axis direction, and in the case where it is necessary to correct the position, the position of at least one of the plurality of limiting plates in the X axis direction is corrected. Accordingly, a coating film whose edge blur is suppressed can be stably formed at a desired position on a large-sized substrate.

摘要翻译： 通过使从气相沉积源（60）的气相沉积源开口（61）排出的气相沉积颗粒（91）通过多个限制板（81）之间的空间（82）形成涂膜（90） ）和气相沉积掩模的掩模开口（71），并且在衬底（10）的状态下，相对于气相沉积掩模移动衬底而粘附到衬底上， 并且气相沉积掩模（70）以固定的间隔间隔开。 确定是否需要校正多个限位板中的至少一个在X轴方向上的位置，并且在需要校正位置的情况下，至少一个限位板的位置 对X轴方向的多个限位板进行校正。 因此，可以在大尺寸基板的期望位置稳定地形成抑制边缘模糊的涂膜。

公开(公告)号：US08669192B2

公开(公告)日：2014-03-11

申请号：US13980037

申请日：2012-01-04

申请人： Shinichi Kawato ,  Satoshi Inoue ,  Tohru Sonoda

发明人： Shinichi Kawato ,  Satoshi Inoue ,  Tohru Sonoda

IPC分类号： H01L21/31 ,  H01L21/469 ,  C23C16/00

CPC分类号： H01L51/0008 ,  C23C14/042 ,  C23C14/044 ,  C23C14/12 ,  C23C14/243 ,  H01L51/001 ,  H01L51/56

摘要： First and second vapor deposition particles (91a, 91b) discharged from first and second vapor deposition source openings (61a, 61b) pass through first and second limiting openings (82a, 82b) of a limiting plate unit (80), pass through mask opening (71) of a vapor deposition mask (70) and adhere to a substrate (10) so as to form a coating film. If regions on the substrate to which the first vapor deposition particles and the second vapor deposition particles adhere if the vapor deposition mask is assumed not to exist are respectively denoted by a first region (92a) and a second region (92b), the limiting plate unit limits the directionalities of the first vapor deposition particles and the second vapor deposition particles in a first direction (10a) that travel to the substrate such that the second region is contained within the first region. Accordingly, it is possible to form a light emitting layer with a doping method by using vapor deposition by color.

摘要翻译： 从第一和第二气相沉积源开口（61a，61b）排出的第一和第二蒸镀颗粒（91a，91b）穿过限制板单元（80）的第一和第二限制开口（82a，82b），通过掩模开口 （70）的表面（71）并粘附到基底（10）上以形成涂膜。 如果假设不存在气相沉积掩模，则第一气相沉积颗粒和第二气相沉积颗粒附着的基板上的区域分别由第一区域（92a）和第二区域（92b）表示，限制板 单元限制第一气相沉积颗粒和第二气相沉积颗粒在向基板移动的第一方向（10a）上的方向性，使得第二区域包含在第一区域内。 因此，可以通过使用通过颜色的气相沉积形成具有掺杂方法的发光层。