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公开(公告)号:US20230140239A1
公开(公告)日:2023-05-04
申请号:US17868361
申请日:2022-07-19
Applicant: Samsung Electronics Co., Ltd.
Inventor: Myeong Woo KIM , Yongdeok KIM , Narankhuu TUVSHINJARGAL , Gunhee KIM , Seungwon LEE , Changin CHOI
IPC: G06F16/906 , G06F40/20 , G06K9/62
Abstract: A processor-implemented method with data loading includes: dividing a training data set into a plurality of subsets based on sizes of a plurality of data files included in the training data set; loading, from each of the plurality of subsets, a portion of data files in the subset to a plurality of processors based on a proportion of a number of data files of the plurality of subsets in the subset and a batch size of distributed training; and reallocating, based on sizes of data files loaded to processors in a same group among the plurality of processors, the loaded data files to the processors in the same group.
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公开(公告)号:US20220092384A1
公开(公告)日:2022-03-24
申请号:US17192048
申请日:2021-03-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Gunhee KIM , Seungwon LEE
IPC: G06N3/04
Abstract: A method of quantizing parameters of a neural network includes acquiring a parameter of a floating-point format used in a process of inferring by the neural network, quantizing, based on statistics of a weight included in the parameter, the weight into a fixed-point format, determining, based on statistics of an activation of one or more layers configuring the neural network included in the parameter, a dynamic range of the activation, and quantizing, based on statistics of input data of the neural network, the input data into a fixed-point format.
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公开(公告)号:US20210081798A1
公开(公告)日:2021-03-18
申请号:US16835532
申请日:2020-03-31
Applicant: Samsung Electronics Co., Ltd.
Inventor: Minkyoung CHO , Wonjo LEE , Seungwon LEE
Abstract: A method and apparatus for the pruning of a neural network is provided. The method sets a weight threshold value based on a weight distribution of layers included in a neural network, predicts a change of inference accuracy of a neural network by pruning of each layer based on the weight threshold value, determines a current subject layer to be pruned with a weight threshold value among the layers included in the neural network, and prunes a determined current subject layer.
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公开(公告)号:US20210066344A1
公开(公告)日:2021-03-04
申请号:US16850244
申请日:2020-04-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Younghwan SON , Seungwon LEE , Seogoo KANG , Juyoung LIM , Jeehoon HAN
IPC: H01L27/11582 , H01L29/51 , H01L29/49 , H01L23/528 , H01L23/522 , H01L27/11565 , G11C16/10 , G11C16/04 , G11C16/26 , G11C11/56
Abstract: A vertical non-volatile memory device includes a channel on a substrate and extending in a first direction perpendicular to an upper surface of the substrate, a first charge storage structure on an outer sidewall of the channel, a second charge storage structure on an inner sidewall of the channel, first gate electrodes spaced apart from each other in the first direction on the substrate, each which surrounds the first charge storage structure, and a second gate electrode on an inner sidewall of the second charge storage structure.
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公开(公告)号:US20190228307A1
公开(公告)日:2019-07-25
申请号:US16255311
申请日:2019-01-23
Inventor: Seungwon LEE , Dongwoo LEE , Kiyoung CHOI , Sungbum KANG
Abstract: A processor-implemented data processing method includes encoding a plurality of weights of a filter of a neural network using an inverted two's complement fixed-point format; generating weight data based on values of the encoded weights corresponding to same filter positions of a plurality of filters; and performing an operation on the weight data and input activation data using a bit-serial scheme to control when to perform an activation function with respect to the weight data and input activation data.
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公开(公告)号:US20190161351A1
公开(公告)日:2019-05-30
申请号:US16183146
申请日:2018-11-07
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hyunjae SONG , Keunwook SHIN , Hyeonjin SHIN , Changseok LEE , Changhyun KIM , Kyungeun BYUN , Seungwon LEE , Eunkyu LEE
IPC: C01B32/186 , H01L23/532 , H01L21/285 , H01L21/768 , C23C16/26 , C23C16/50
Abstract: Provided are nanocrystalline graphene and a method of forming the nanocrystalline graphene through a plasma enhanced chemical vapor deposition process. The nanocrystalline graphene may have a ratio of carbon having an sp2 bonding structure to total carbon within the range of about 50% to 99%. In addition, the nanocrystalline graphene may include crystals having a size of about 0.5 nm to about 100 nm.
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