Method of Fabricating a Semiconductor Device
    54.
    发明申请
    Method of Fabricating a Semiconductor Device 审中-公开
    制造半导体器件的方法

    公开(公告)号:US20150031195A1

    公开(公告)日:2015-01-29

    申请号:US14297734

    申请日:2014-06-06

    Abstract: A method of fabricating a semiconductor device may include conformally forming a gate insulating layer on a substrate having a recess, conformally forming a barrier layer containing fluorine-free tungsten nitride on the substrate with the gate insulating layer using an atomic layer deposition process, and forming a gate electrode on the barrier layer to fill at least a portion of the recess.

    Abstract translation: 制造半导体器件的方法可以包括在具有凹部的基板上保形地形成栅极绝缘层,所述栅极绝缘层在基板上使用原子层沉积工艺在栅极绝缘层上保形地形成包含无氟氮化钨的阻挡层,并且形成 在所述阻挡层上的栅电极以填充所述凹部的至少一部分。

    DISPLAY DEVICE PERFORMING CHARGE SHARING

    公开(公告)号:US20220310012A1

    公开(公告)日:2022-09-29

    申请号:US17519704

    申请日:2021-11-05

    Abstract: A display device includes a display panel, a plurality of switch circuits and a charge sharing controller. The display panel includes a plurality of pixels which are connected to a plurality of gate lines and a plurality of source lines. The plurality of source lines are divided into a plurality of source line groups. The plurality of switch circuit electrically connect source lines included in each of the plurality of source line groups based on each of a plurality of group switch control signals to perform charge sharing. The charge sharing controller generates each of the plurality of group switch control signals based on first most significant bits (MSBs) of each of a plurality of (K−1)th digital data groups and second MSBs of each of a plurality of Kth digital data group.

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