公开(公告)号：US08406032B2

公开(公告)日：2013-03-26

申请号：US12801830

申请日：2010-06-28

申请人： Seung-eon Ahn ,  Young-bae Kim

发明人： Seung-eon Ahn ,  Young-bae Kim

IPC分类号： G11C11/22

CPC分类号： G11C11/22 ,  H01L29/8615

摘要： Memory devices and methods of operating the same. A memory cell of a memory device may include a ferroelectric layer and a semiconductor layer bonded to each other. The ferroelectric layer may be of a p-type and the semiconductor layer may be of an n-type. The memory cell may have a switching characteristic due to a depletion region that exists in a junction between the ferroelectric layer and the semiconductor layer. The memory device may be a device writing data using a polarization change of the ferroelectric layer.

摘要翻译： 内存设备及操作方法。 存储器件的存储单元可以包括铁电层和彼此结合的半导体层。 铁电层可以是p型，并且半导体层可以是n型。 由于存在于铁电层和半导体层之间的结中的耗尽区，存储单元可能具有开关特性。 存储器件可以是使用铁电层的偏振变化来写入数据的器件。

公开(公告)号：US20110284722A1

公开(公告)日：2011-11-24

申请号：US12926831

申请日：2010-12-13

申请人： Seung-eon Ahn ,  Sung-ho Park ,  I-hun Song ,  Sang-hun Jeon

发明人： Seung-eon Ahn ,  Sung-ho Park ,  I-hun Song ,  Sang-hun Jeon

IPC分类号： H01L27/146 ,  H01J40/14

CPC分类号： H03K17/78 ,  H03K17/941

摘要： Example embodiments are directed to a light-sensing circuit, a method of operating the light-sensing circuit, and a light-sensing apparatus including the light-sensing circuit. The light-sensing circuit includes a light-sensitive oxide semiconductor transistor that senses light; and a switching transistor connected to the light-sensing transistor in series and configured to output data. During a standby time, a low voltage is applied to the switching transistor and a high voltage is applied to the light-sensitive oxide semiconductor transistor, and when data is output, the high voltage is applied to the switching transistor and the low voltage is applied to the light-sensitive oxide semiconductor transistor.

摘要翻译： 示例性实施例涉及光感​​测电路，操作光感测电路的方法以及包括光感测电路的光感测设备。 感光电路包括感测光的光敏氧化物半导体晶体管; 以及串联连接到感光晶体管并被配置为输出数据的开关晶体管。 在待机时间期间，低电压被施加到开关晶体管，并且高电压被施加到光敏氧化物半导体晶体管，并且当数据被输出时，高电压被施加到开关晶体管并施加低电压 到光敏氧化物半导体晶体管。

公开(公告)号：US20110241989A1

公开(公告)日：2011-10-06

申请号：US12923243

申请日：2010-09-10

申请人： Sung-ho Park ,  Sang-hun Jeon ,  I-hun Song ,  Chang-jung Kim ,  Seung-eon Ahn

发明人： Sung-ho Park ,  Sang-hun Jeon ,  I-hun Song ,  Chang-jung Kim ,  Seung-eon Ahn

IPC分类号： G06F3/033

CPC分类号： G06F3/0386 ,  G06F3/0412

摘要： A remote touch panel includes a plurality of light sensor cells arranged in two dimensions. Each light sensor cell may include a light-sensitive semiconductor layer and first and second electrodes electrically connected to the light-sensitive semiconductor layer. The remote touch panel may be controlled at a remote distance. For example, a large display apparatus can be easily controlled by using a simple light source device, for example, a laser pointer.

摘要翻译： 远程触摸面板包括以二维布置的多个光传感器单元。 每个光传感器单元可以包括光敏半导体层和电连接到光敏半导体层的第一和第二电极。 远程触摸面板可以被控制在远处。 例如，通过使用简单的光源装置，例如激光指示器，可以容易地控制大型的显示装置。

公开(公告)号：US20110149633A1

公开(公告)日：2011-06-23

申请号：US12801830

申请日：2010-06-28

申请人： Seung-eon Ahn ,  Young-bae Kim

发明人： Seung-eon Ahn ,  Young-bae Kim

IPC分类号： G11C11/22 ,  H01L27/105

CPC分类号： G11C11/22 ,  H01L29/8615

摘要： Memory devices and methods of operating the same. A memory cell of a memory device may include a ferroelectric layer and a semiconductor layer bonded to each other. The ferroelectric layer may be of a p-type and the semiconductor layer may be of an n-type. The memory cell may have a switching characteristic due to a depletion region that exists in a junction between the ferroelectric layer and the semiconductor layer. The memory device may be a device writing data using a polarization change of the ferroelectric layer.

摘要翻译： 内存设备及操作方法。 存储器件的存储单元可以包括铁电层和彼此结合的半导体层。 铁电层可以是p型，并且半导体层可以是n型。 由于存在于铁电层和半导体层之间的结中的耗尽区，存储单元可能具有开关特性。 存储器件可以是使用铁电层的偏振变化来写入数据的器件。

公开(公告)号：US20100246234A1

公开(公告)日：2010-09-30

申请号：US12654645

申请日：2009-12-28

申请人： Seung-eon Ahn ,  Ho-jung Kim ,  Chul-woo Park ,  Sang-beom Kang ,  Hyun-ho Choi

发明人： Seung-eon Ahn ,  Ho-jung Kim ,  Chul-woo Park ,  Sang-beom Kang ,  Hyun-ho Choi

IPC分类号： G11C5/02

CPC分类号： G11C5/025 ,  G11C5/02 ,  G11C13/0023 ,  G11C2213/71 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/48091 ,  H01L2224/49 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A stacked memory device may include a substrate, a plurality of memory layers stacked on and above the substrate and divided into a plurality of groups, a plurality of inter-decoders electrically connected to and disposed between the plurality of memory layers in a corresponding one of the plurality of groups, and at least one pre-decoder electrically connected to the plurality of inter-decoders and disposed between the plurality of inter-decoders. A stacked memory device may include a substrate, a plurality of memory layers stacked on and above the substrate and divided into a plurality of groups, a plurality of inter-drivers electrically connected to and disposed between the plurality of memory layers in a corresponding one of the plurality of groups, and at least one pre-driver electrically connected to the plurality of inter-drivers, and disposed between the plurality of inter-drivers.

摘要翻译： 层叠的存储器件可以包括衬底，堆叠在衬底上和衬底上并被分成多个组的多个存储器层，多个解码器电连接到多个存储器层并且布置在多个存储器层中的相应的一个 所述多个组以及至少一个预解码器电连接到所述多个解码器并且设置在所述多个解码器之间。 层叠的存储器件可以包括衬底，堆叠在衬底上和衬底上并被分成多个组的多个存储器层，多个驱动器电连接到多个存储器层并且被布置在多个存储器层中的相应的一个 所述多个组，以及电连接到所述多个驱动器之间的至少一个预驱动器，并且设置在所述多个驱动器之间。

公开(公告)号：US20100099218A1

公开(公告)日：2010-04-22

申请号：US12654395

申请日：2009-12-18

申请人： Seung-eon Ahn ,  Hye-young Kim ,  Byoung-ho Park ,  Jung-bin Yun ,  You-seon Kim

发明人： Seung-eon Ahn ,  Hye-young Kim ,  Byoung-ho Park ,  Jung-bin Yun ,  You-seon Kim

IPC分类号： H01L21/34

CPC分类号： H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1641

摘要： Example embodiments relate to a method of fabricating a memory device and a memory device. The method of fabricating a memory device comprises forming a lower electrode and an oxide layer on a lower structure and radiating an energy beam on a region of the oxide layer. The memory device comprises a lower structure and an oxide layer and a lower structure formed on the lower structure, the oxide layer including an electron beam radiation region that received radiation from an electron beam source creating an artificially formed current path through the oxide layer to the lower electrode. A reset current of the memory device may be decreased and stabilized.

公开(公告)号：US07659566B2

公开(公告)日：2010-02-09

申请号：US11501880

申请日：2006-08-10

申请人： Seung-eon Ahn ,  Hye-young Kim ,  Byoung-ho Park ,  Jung-bin Yun ,  You-seon Kim

发明人： Seung-eon Ahn ,  Hye-young Kim ,  Byoung-ho Park ,  Jung-bin Yun ,  You-seon Kim

IPC分类号： H01L27/108

CPC分类号： H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1641

摘要： Example embodiments relate to a method of fabricating a memory device and a memory device. The method of fabricating a memory device comprises forming a lower electrode and an oxide layer on a lower structure and radiating an energy beam on a region of the oxide layer. The memory device comprises a lower structure and an oxide layer and a lower structure formed on the lower structure, the oxide layer including an electron beam radiation region that received radiation from an electron beam source creating an artificially formed current path through the oxide layer to the lower electrode. A reset current of the memory device may be decreased and stabilized.

摘要翻译： 示例性实施例涉及制造存储器件和存储器件的方法。 制造存储器件的方法包括在下部结构上形成下部电极和氧化物层，并在氧化物层的区域上辐射能量束。 存储器件包括下部结构和形成在下部结构上的下部结构的氧化物层和下部结构，所述氧化物层包括电子束辐射区域，所述电子束辐射区域接收来自电子束源的辐射，从而产生通过氧化物层的人为形成的电流路径 下电极。 可以减小并稳定存储器件的复位电流。

公开(公告)号：US20070037351A1

公开(公告)日：2007-02-15

申请号：US11501880

申请日：2006-08-10

申请人： Seung-eon Ahn ,  Hye-young Kim ,  Byoung-ho Park ,  Jung-bin Yun ,  You-seon Kim

发明人： Seung-eon Ahn ,  Hye-young Kim ,  Byoung-ho Park ,  Jung-bin Yun ,  You-seon Kim

IPC分类号： H01L21/336

CPC分类号： H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1641

摘要： Example embodiments relate to a method of fabricating a memory device and a memory device. The method of fabricating a memory device comprises forming a lower electrode and an oxide layer on a lower structure and radiating an energy beam on a region of the oxide layer. The memory device comprises a lower structure and an oxide layer and a lower structure formed on the lower structure, the oxide layer including an electron beam radiation region that received radiation from an electron beam source creating an artificially formed current path through the oxide layer to the lower electrode. A reset current of the memory device may be decreased and stabilized.

摘要翻译： 示例性实施例涉及制造存储器件和存储器件的方法。 制造存储器件的方法包括在下部结构上形成下部电极和氧化物层，并在氧化物层的区域上辐射能量束。 存储器件包括下部结构和形成在下部结构上的下部结构的氧化物层和下部结构，所述氧化物层包括电子束辐射区域，所述电子束辐射区域接收来自电子束源的辐射，从而产生通过氧化物层的人为形成的电流路径到 下电极。 可以减小并稳定存储器件的复位电流。