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    Stacked memory devices
    1.
    发明申请
    Stacked memory devices 有权
    堆叠式存储器件

    公开(公告)号：US20100309705A1

    公开(公告)日：2010-12-09

    申请号：US12662785

    申请日：2010-05-04

    申请人： Seung-eon Ahn ,  Ho-jung Kim ,  Chul-woo Park ,  Sang-beom Kang ,  Hyun-ho Choi

    发明人： Seung-eon Ahn ,  Ho-jung Kim ,  Chul-woo Park ,  Sang-beom Kang ,  Hyun-ho Choi

    IPC分类号： G11C5/02

    CPC分类号： G11C5/025 ,  G11C5/02 ,  G11C8/10 ,  G11C13/0004 ,  G11C13/0023 ,  G11C13/0028 ,  G11C2213/71 ,  G11C2213/72

    摘要： A stacked memory device may include a substrate, a plurality of memory groups sequentially stacked on the substrate, each memory group including at least one memory layer, a plurality of X-decoder layers, at least one of the plurality of X-decoder layers being disposed between every alternate neighboring two of the plurality of memory groups, and a plurality of Y-decoder layers disposed alternately with the plurality of X-decoder layers, at least one of the plurality of Y-decoder layers being disposed between every alternate neighboring two of the plurality of memory groups.

    摘要翻译： 层叠的存储器件可以包括衬底，顺序地堆叠在衬底上的多个存储器组，每个存储器组包括至少一个存储器层，多个X译码器层，所述多个X译码器层中的至少一个是 设置在所述多个存储器组中的每个相邻的两个存储器组之间，以及与所述多个X解码器层交替布置的多个Y译码器层，所述多个Y译码器层中的至少一个设置在每个相邻的两个存储器组之间 的多个存储器组。

    Stacked memory devices
    2.
    发明申请
    Stacked memory devices 有权
    堆叠式存储器件

    公开(公告)号：US20100246234A1

    公开(公告)日：2010-09-30

    申请号：US12654645

    申请日：2009-12-28

    申请人： Seung-eon Ahn ,  Ho-jung Kim ,  Chul-woo Park ,  Sang-beom Kang ,  Hyun-ho Choi

    发明人： Seung-eon Ahn ,  Ho-jung Kim ,  Chul-woo Park ,  Sang-beom Kang ,  Hyun-ho Choi

    IPC分类号： G11C5/02

    CPC分类号： G11C5/025 ,  G11C5/02 ,  G11C13/0023 ,  G11C2213/71 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/48091 ,  H01L2224/49 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

    摘要： A stacked memory device may include a substrate, a plurality of memory layers stacked on and above the substrate and divided into a plurality of groups, a plurality of inter-decoders electrically connected to and disposed between the plurality of memory layers in a corresponding one of the plurality of groups, and at least one pre-decoder electrically connected to the plurality of inter-decoders and disposed between the plurality of inter-decoders. A stacked memory device may include a substrate, a plurality of memory layers stacked on and above the substrate and divided into a plurality of groups, a plurality of inter-drivers electrically connected to and disposed between the plurality of memory layers in a corresponding one of the plurality of groups, and at least one pre-driver electrically connected to the plurality of inter-drivers, and disposed between the plurality of inter-drivers.

    摘要翻译： 层叠的存储器件可以包括衬底，堆叠在衬底上和衬底上并被分成多个组的多个存储器层，多个解码器电连接到多个存储器层并且布置在多个存储器层中的相应的一个 所述多个组以及至少一个预解码器电连接到所述多个解码器并且设置在所述多个解码器之间。 层叠的存储器件可以包括衬底，堆叠在衬底上和衬底上并被分成多个组的多个存储器层，多个驱动器电连接到多个存储器层并且被布置在多个存储器层中的相应的一个 所述多个组，以及电连接到所述多个驱动器之间的至少一个预驱动器，并且设置在所述多个驱动器之间。

    Stacked memory devices
    3.
    发明授权
    Stacked memory devices 有权
    堆叠式存储器件

    公开(公告)号：US08611121B2

    公开(公告)日：2013-12-17

    申请号：US12662785

    申请日：2010-05-04

    申请人： Seung-eon Ahn ,  Ho-jung Kim ,  Chul-woo Park ,  Sang-beom Kang ,  Hyun-ho Choi

    发明人： Seung-eon Ahn ,  Ho-jung Kim ,  Chul-woo Park ,  Sang-beom Kang ,  Hyun-ho Choi

    IPC分类号： G11C5/02

    CPC分类号： G11C5/025 ,  G11C5/02 ,  G11C8/10 ,  G11C13/0004 ,  G11C13/0023 ,  G11C13/0028 ,  G11C2213/71 ,  G11C2213/72

    摘要： A stacked memory device may include a substrate, a plurality of memory groups sequentially stacked on the substrate, each memory group including at least one memory layer, a plurality of X-decoder layers, at least one of the plurality of X-decoder layers being disposed between every alternate neighboring two of the plurality of memory groups, and a plurality of Y-decoder layers disposed alternately with the plurality of X-decoder layers, at least one of the plurality of Y-decoder layers being disposed between every alternate neighboring two of the plurality of memory groups.

    摘要翻译： 层叠的存储器件可以包括衬底，顺序地堆叠在衬底上的多个存储器组，每个存储器组包括至少一个存储器层，多个X译码器层，所述多个X译码器层中的至少一个是 设置在所述多个存储器组中的每个相邻的两个存储器组之间，以及与所述多个X解码器层交替布置的多个Y译码器层，所述多个Y译码器层中的至少一个设置在每个相邻的两个存储器组之间 的多个存储器组。

    Stacked memory device including a pre-decoder/pre-driver sandwiched between a plurality of inter-decoders/inter-drivers
    4.
    发明授权
    Stacked memory device including a pre-decoder/pre-driver sandwiched between a plurality of inter-decoders/inter-drivers 有权
    堆叠存储器件包括夹在多个解码器/驱动器之间的预解码器/预驱动器

    公开(公告)号：US08054665B2

    公开(公告)日：2011-11-08

    申请号：US12654645

    申请日：2009-12-28

    申请人： Seung-eon Ahn ,  Ho-jung Kim ,  Chul-woo Park ,  Sang-beom Kang ,  Hyun-ho Choi

    发明人： Seung-eon Ahn ,  Ho-jung Kim ,  Chul-woo Park ,  Sang-beom Kang ,  Hyun-ho Choi

    IPC分类号： G11C5/02

    CPC分类号： G11C5/025 ,  G11C5/02 ,  G11C13/0023 ,  G11C2213/71 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/48091 ,  H01L2224/49 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

    摘要： A stacked memory device may include a substrate, a plurality of memory layers stacked on and above the substrate and divided into a plurality of groups, a plurality of inter-decoders electrically connected to and disposed between the plurality of memory layers in a corresponding one of the plurality of groups, and at least one pre-decoder electrically connected to the plurality of inter-decoders and disposed between the plurality of inter-decoders. A stacked memory device may include a substrate, a plurality of memory layers stacked on and above the substrate and divided into a plurality of groups, a plurality of inter-drivers electrically connected to and disposed between the plurality of memory layers in a corresponding one of the plurality of groups, and at least one pre-driver electrically connected to the plurality of inter-drivers, and disposed between the plurality of inter-drivers.

    摘要翻译： 层叠的存储器件可以包括衬底，堆叠在衬底上和衬底上并被分成多个组的多个存储器层，多个解码器电连接到多个存储器层并且布置在多个存储器层中的相应的一个 所述多个组以及至少一个预解码器电连接到所述多个解码器并且设置在所述多个解码器之间。 层叠的存储器件可以包括衬底，堆叠在衬底上和衬底上并被分成多个组的多个存储器层，多个驱动器电连接到多个存储器层并且被布置在多个存储器层中的相应的一个 所述多个组，以及电连接到所述多个驱动器之间的至少一个预驱动器，并且设置在所述多个驱动器之间。

    Magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices
    5.
    发明授权
    Magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices 失效
    磁性分组存储器存储设备，包括这种设备的存储器系统以及控制这些设备的方法

    公开(公告)号：US08050074B2

    公开(公告)日：2011-11-01

    申请号：US12658807

    申请日：2010-02-16

    申请人： Ho-jung Kim ,  Chul-woo Park ,  Sang-beom Kang ,  Jong-wan Kim ,  Hyun-ho Choi ,  Young-pil Kim ,  Sung-chul Lee

    发明人： Ho-jung Kim ,  Chul-woo Park ,  Sang-beom Kang ,  Jong-wan Kim ,  Hyun-ho Choi ,  Young-pil Kim ,  Sung-chul Lee

    IPC分类号： G11C19/00

    CPC分类号： G11C11/15 ,  G11C5/04

    摘要： A memory device is comprised of a magnetic structure that stores information in a plurality of domains of the magnetic structure. A write unit writes information to at least one of the plurality of domains of the magnetic structure by applying a write current to the magnetic structure in response to a control signal. A read unit reads information from at least one of the plurality of domains of the magnetic structure by applying a read current to the magnetic structure in response to the control signal. A domain wall movement control unit is coupled to a portion of the magnetic structure and moves information stored in the plurality of domains in the magnetic structure to other domains in the magnetic structure in response to the control signal. The write unit, the read unit and the domain wall movement control unit are all coupled to the same control signal line that provides the control signal.

    摘要翻译： 存储器件由将磁信息存储在磁结构的多个域中的磁结构构成。 写单元响应于控制信号向磁结构施加写入电流，将信息写入磁结构的多个域中的至少一个。 读取单元通过响应于控制信号向磁性结构施加读取电流，从磁性结构的多个域中的至少一个域读取信息。 畴壁移动控制单元耦合到磁结构的一部分，并且响应于控制信号将存储在磁结构中的多个域中的信息移动到磁结构中的其他区域。 写单元，读单元和域壁移动控制单元都耦合到提供控制信号的相同控制信号线。

    Magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices
    8.
    发明申请
    Magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices 失效
    磁性分组存储器存储设备，包括这种设备的存储器系统以及控制这些设备的方法

    公开(公告)号：US20100208381A1

    公开(公告)日：2010-08-19

    申请号：US12658807

    申请日：2010-02-16

    申请人： Ho-jung Kim ,  Chul-woo Park ,  Sang-beom Kang ,  Jong-wan Kim ,  Hyun-ho Choi ,  Young-pil Kim ,  Sung-chul Lee

    发明人： Ho-jung Kim ,  Chul-woo Park ,  Sang-beom Kang ,  Jong-wan Kim ,  Hyun-ho Choi ,  Young-pil Kim ,  Sung-chul Lee

    IPC分类号： G11B19/02

    CPC分类号： G11C11/15 ,  G11C5/04

    摘要： A memory device is comprised of a magnetic structure that stores information in a plurality of domains of the magnetic structure. A write unit writes information to at least one of the plurality of domains of the magnetic structure by applying a write current to the magnetic structure in response to a control signal. A read unit reads information from at least one of the plurality of domains of the magnetic structure by applying a read current to the magnetic structure in response to the control signal. A domain wall movement control unit is coupled to a portion of the magnetic structure and moves information stored in the plurality of domains in the magnetic structure to other domains in the magnetic structure in response to the control signal. The write unit, the read unit and the domain wall movement control unit are all coupled to the same control signal line that provides the control signal.

    摘要翻译： 存储器件由将磁信息存储在磁结构的多个域中的磁结构构成。 写单元响应于控制信号向磁结构施加写入电流，将信息写入磁结构的多个域中的至少一个。 读取单元通过响应于控制信号向磁性结构施加读取电流，从磁性结构的多个域中的至少一个域读取信息。 畴壁移动控制单元耦合到磁结构的一部分，并且响应于控制信号将存储在磁结构中的多个域中的信息移动到磁结构中的其他区域。 写单元，读单元和域壁移动控制单元都耦合到提供控制信号的相同控制信号线。