利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

6 条记录 (耗时 0.025 秒)

    Method of fabricating a resistance based memory device and the memory device
    1.
    发明授权
    Method of fabricating a resistance based memory device and the memory device 有权
    制造基于电阻的存储器件和存储器件的方法

    公开(公告)号：US08207068B2

    公开(公告)日：2012-06-26

    申请号：US12654395

    申请日：2009-12-18

    申请人： Seung-eon Ahn ,  Hye-young Kim ,  Byoung-ho Park ,  Jung-bin Yun ,  You-seon Kim

    发明人： Seung-eon Ahn ,  Hye-young Kim ,  Byoung-ho Park ,  Jung-bin Yun ,  You-seon Kim

    IPC分类号： H01L21/26

    CPC分类号： H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1641

    摘要： Example embodiments relate to a method of fabricating a memory device and a memory device. The method of fabricating a memory device comprises forming a lower electrode and an oxide layer on a lower structure and radiating an energy beam on a region of the oxide layer. The memory device comprises a lower structure and an oxide layer and a lower structure formed on the lower structure, the oxide layer including an electron beam radiation region that received radiation from an electron beam source creating an artificially formed current path through the oxide layer to the lower electrode. A reset current of the memory device may be decreased and stabilized.

    摘要翻译： 示例性实施例涉及制造存储器件和存储器件的方法。 制造存储器件的方法包括在下部结构上形成下部电极和氧化物层，并在氧化物层的区域上辐射能量束。 存储器件包括下部结构和形成在下部结构上的下部结构的氧化物层和下部结构，所述氧化物层包括电子束辐射区域，所述电子束辐射区域接收来自电子束源的辐射，从而产生通过氧化物层的人为形成的电流路径到 下电极。 可以减小并稳定存储器件的复位电流。

    Method of fabricating a resistance based memory device and the memory device
    3.
    发明授权
    Method of fabricating a resistance based memory device and the memory device 有权
    制造基于电阻的存储器件和存储器件的方法

    公开(公告)号：US07659566B2

    公开(公告)日：2010-02-09

    申请号：US11501880

    申请日：2006-08-10

    申请人： Seung-eon Ahn ,  Hye-young Kim ,  Byoung-ho Park ,  Jung-bin Yun ,  You-seon Kim

    发明人： Seung-eon Ahn ,  Hye-young Kim ,  Byoung-ho Park ,  Jung-bin Yun ,  You-seon Kim

    IPC分类号： H01L27/108

    CPC分类号： H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1641

    摘要： Example embodiments relate to a method of fabricating a memory device and a memory device. The method of fabricating a memory device comprises forming a lower electrode and an oxide layer on a lower structure and radiating an energy beam on a region of the oxide layer. The memory device comprises a lower structure and an oxide layer and a lower structure formed on the lower structure, the oxide layer including an electron beam radiation region that received radiation from an electron beam source creating an artificially formed current path through the oxide layer to the lower electrode. A reset current of the memory device may be decreased and stabilized.

    摘要翻译： 示例性实施例涉及制造存储器件和存储器件的方法。 制造存储器件的方法包括在下部结构上形成下部电极和氧化物层，并在氧化物层的区域上辐射能量束。 存储器件包括下部结构和形成在下部结构上的下部结构的氧化物层和下部结构，所述氧化物层包括电子束辐射区域，所述电子束辐射区域接收来自电子束源的辐射，从而产生通过氧化物层的人为形成的电流路径 下电极。 可以减小并稳定存储器件的复位电流。

    Method of fabricating a resistance based memory device and the memory device
    4.
    发明申请
    Method of fabricating a resistance based memory device and the memory device 有权
    制造基于电阻的存储器件和存储器件的方法

    公开(公告)号：US20070037351A1

    公开(公告)日：2007-02-15

    申请号：US11501880

    申请日：2006-08-10

    申请人： Seung-eon Ahn ,  Hye-young Kim ,  Byoung-ho Park ,  Jung-bin Yun ,  You-seon Kim

    发明人： Seung-eon Ahn ,  Hye-young Kim ,  Byoung-ho Park ,  Jung-bin Yun ,  You-seon Kim

    IPC分类号： H01L21/336

    CPC分类号： H01L45/04 ,  H01L27/2436 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1641

    摘要： Example embodiments relate to a method of fabricating a memory device and a memory device. The method of fabricating a memory device comprises forming a lower electrode and an oxide layer on a lower structure and radiating an energy beam on a region of the oxide layer. The memory device comprises a lower structure and an oxide layer and a lower structure formed on the lower structure, the oxide layer including an electron beam radiation region that received radiation from an electron beam source creating an artificially formed current path through the oxide layer to the lower electrode. A reset current of the memory device may be decreased and stabilized.

    摘要翻译： 示例性实施例涉及制造存储器件和存储器件的方法。 制造存储器件的方法包括在下部结构上形成下部电极和氧化物层，并在氧化物层的区域上辐射能量束。 存储器件包括下部结构和形成在下部结构上的下部结构的氧化物层和下部结构，所述氧化物层包括电子束辐射区域，所述电子束辐射区域接收来自电子束源的辐射，从而产生通过氧化物层的人为形成的电流路径到 下电极。 可以减小并稳定存储器件的复位电流。