公开(公告)号：US07186315B2

公开(公告)日：2007-03-06

申请号：US10402950

申请日：2003-04-01

申请人： Shinji Himori ,  Itsuko Sakai

发明人： Shinji Himori ,  Itsuko Sakai

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： H01J37/32009 ,  H01J37/32568

摘要： There is provided a plasma treatment apparatus that carries out plasma treatment on an article, with which it is possible to make the plasma density uniform. A plasma treatment vessel houses a semiconductor wafer and a treatment gas is introduced into the plasma treatment vessel. A lower electrode is provided inside the plasma treatment vessel and the semiconductor wafer is placed onto the lower electrode. An upper electrode that has a plurality of holes formed therein and has a dome shape that is upwardly convex, is provided above the lower electrode in the plasma treatment vessel. A height of the upper electrode from the lower electrode becomes greater from an outside of the lower electrode to a center of the lower electrode.

摘要翻译： 提供了一种对制品进行等离子体处理的等离子体处理装置，可以使等离子体密度均匀。 等离子体处理容器容纳半导体晶片，并将处理气体引入等离子体处理容器中。 在等离子体处理容器的内部设置下电极，将半导体晶片放置在下电极上。 在等离子体处理容器中的下部电极的上方设置有形成有多个孔并且具有向上凸出的圆顶形状的上部电极。 上电极与下电极的高度从下电极的外侧向下电极的中心变大。

公开(公告)号：US07104217B2

公开(公告)日：2006-09-12

申请号：US10273000

申请日：2002-10-18

申请人： Shinji Himori ,  Toshiki Takahashi ,  Takumi Komatsu

发明人： Shinji Himori ,  Toshiki Takahashi ,  Takumi Komatsu

IPC分类号： C23C16/00 ,  C23C14/34 ,  H01L21/306

CPC分类号： H01J37/32082 ,  H01J37/32532

摘要： The present invention provides a plasma processing apparatus having an electrode plate arranging therein, an upper electrode to which a dielectric member or a cavity portion is provided, a dimension or a dielectric constant of which is determined in such a manner that resonance is generated at a frequency of high-frequency power supplied to the center of the back side and an electric field orthogonal to the electrode plate is generated, and a susceptor as a lower electrode so as to be opposed to each other, in order to reduce unevenness of an electric field distribution on the surface of the electrode in a plasma processing using a high-density plasma capable of coping with further refinement.

公开(公告)号：US06915760B2

公开(公告)日：2005-07-12

申请号：US10273000

申请日：2002-10-18

申请人： Shinji Himori ,  Toshiki Takahashi ,  Takumi Komatsu

发明人： Shinji Himori ,  Toshiki Takahashi ,  Takumi Komatsu

摘要： The present invention provides a plasma processing apparatus having an electrode plate arranging therein, an upper electrode to which a dielectric member or a cavity portion is provided, a dimension or a dielectric constant of which is determined in such a manner that resonance is generated at a frequency of high-frequency power supplied to the center of the back side and an electric field orthogonal to the electrode plate is generated, and a susceptor as a lower electrode so as to be opposed to each other, in order to reduce unevenness of an electric field distribution on the surface of the electrode in a plasma processing using a high-density plasma capable of coping with further refinement.

公开(公告)号：US5888907A

公开(公告)日：1999-03-30

申请号：US842426

申请日：1997-04-24

申请人： Masayuki Tomoyasu ,  Shinji Himori

发明人： Masayuki Tomoyasu ,  Shinji Himori

IPC分类号： C23C14/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/203 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/00

CPC分类号： H01J37/3244

摘要： In a plasma etching apparatus, an inactive gas and a reactive gas are supplied from a gas spouting surface of a shower head, and are turned into plasma by means of RF discharge, so that a semiconductor wafer placed on a susceptor is etched by the plasma. The inactive gas is continuously supplied from inactive gas spouting holes formed all over the gas spouting surface. The reactive gas is supplied from reactive gas spouting holes, which are formed all over the gas spouting surface and divided into a plurality of groups, by repeatedly scanning the groups in a time-sharing manner.

摘要翻译： 在等离子体蚀刻装置中，从喷淋头的气体喷出面供给惰性气体和反应性气体，通过RF放电使其成为等离子体，由此通过等离子体蚀刻放置在基座上的半导体晶片 。 惰性气体由形成在整个气体喷射表面上的惰性气体喷射孔连续供给。 反应性气体由反应性气体喷射孔供给，反应气体喷射孔通过以分时方式重复扫描组而形成在气体喷射表面的整个表面上并被分成多组。