公开(公告)号：US5888907A

公开(公告)日：1999-03-30

申请号：US842426

申请日：1997-04-24

申请人： Masayuki Tomoyasu ,  Shinji Himori

发明人： Masayuki Tomoyasu ,  Shinji Himori

IPC分类号： C23C14/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/203 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/00

CPC分类号： H01J37/3244

摘要： In a plasma etching apparatus, an inactive gas and a reactive gas are supplied from a gas spouting surface of a shower head, and are turned into plasma by means of RF discharge, so that a semiconductor wafer placed on a susceptor is etched by the plasma. The inactive gas is continuously supplied from inactive gas spouting holes formed all over the gas spouting surface. The reactive gas is supplied from reactive gas spouting holes, which are formed all over the gas spouting surface and divided into a plurality of groups, by repeatedly scanning the groups in a time-sharing manner.

摘要翻译： 在等离子体蚀刻装置中，从喷淋头的气体喷出面供给惰性气体和反应性气体，通过RF放电使其成为等离子体，由此通过等离子体蚀刻放置在基座上的半导体晶片 。 惰性气体由形成在整个气体喷射表面上的惰性气体喷射孔连续供给。 反应性气体由反应性气体喷射孔供给，反应气体喷射孔通过以分时方式重复扫描组而形成在气体喷射表面的整个表面上并被分成多组。

公开(公告)号：US09202675B2

公开(公告)日：2015-12-01

申请号：US12718627

申请日：2010-03-05

申请人： Shinji Himori ,  Daisuke Hayashi

发明人： Shinji Himori ,  Daisuke Hayashi

IPC分类号： C23F1/08 ,  C23C16/50 ,  H01J37/32

CPC分类号： H01J37/3255 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32183 ,  H01J37/32577

摘要： A plasma processing apparatus includes a processing chamber in which a target object is processed by a plasma, a first and a second electrode that are provided in the processing chamber to face each other and have a processing space therebetween, and a high frequency power source that is connected to at least one of the first and the second electrode to supply a high frequency power to the processing chamber. And at least one of the first and the second electrode includes a base formed of a plate-shaped dielectric material and a resistor formed of a metal and provided between the base and the plasma.

摘要翻译： 等离子体处理装置包括处理室，其中目标物体由等离子体处理，第一和第二电极设置在处理室中以彼此面对并具有其间的处理空间;以及高频电源， 连接到第一和第二电极中的至少一个，以向处理室提供高频电力。 并且第一和第二电极中的至少一个包括由板状电介质材料形成的基底和由金属形成并设置在基底和等离子体之间的电阻器。

公开(公告)号：US08568606B2

公开(公告)日：2013-10-29

申请号：US12750015

申请日：2010-03-30

申请人： Takeshi Ohse ,  Shinji Himori ,  Jun Abe ,  Norikazu Yamada

发明人： Takeshi Ohse ,  Shinji Himori ,  Jun Abe ,  Norikazu Yamada

IPC分类号： C03C15/00

CPC分类号： H01J37/02 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165

摘要： A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output.

摘要翻译： 基板处理方法使用基板处理装置，其包括用于容纳基板的室，用于安装基板的下电极，用于将用于等离子体产生的RF功率施加到室中的第一RF功率施加单元和第二RF功率施加单元 用于向下电极施加用于偏压的RF功率。 通过在预定的定时改变第一RF功率施加单元的输出来控制等离子体产生的RF功率间歇地改变。 如果通过第一RF功率施加单元的控制在腔室中不存在等离子体状态或余辉状态，则第二RF功率施加单元的输出被控制为处于OFF状态或降低到低于第二RF功率的输出 当第一RF功率施加单元的输出为设定输出时，施加单元。

公开(公告)号：US08284538B2

公开(公告)日：2012-10-09

申请号：US11835743

申请日：2007-08-08

申请人： Shinji Himori ,  Shoichiro Matsuyama ,  Atsushi Matsuura ,  Hiroshi Inazumachi ,  Mamoru Kosakai ,  Yukio Miura ,  Keigo Maki

发明人： Shinji Himori ,  Shoichiro Matsuyama ,  Atsushi Matsuura ,  Hiroshi Inazumachi ,  Mamoru Kosakai ,  Yukio Miura ,  Keigo Maki

IPC分类号： H01L21/687

CPC分类号： H01L21/6833

摘要： An electrostatic chuck device includes an electrostatic chuck section, a metal base section, and a dielectric plate. The electrostatic chuck section has a substrate, a main surface of which serves as a mounting surface for a plate-like sample, an electrostatic-adsorption inner electrode built in the substrate, and a power supply terminal for applying a DC voltage to the electrostatic-adsorption inner electrode. Here, a dielectric plate is fixed to a concave portion formed in the metal base section. The dielectric plate and the electrostatic chuck section are adhesively bonded to each other with an insulating adhesive bonding layer interposed therebetween. The dielectric plate and the concave portion are adhesively bonded to each other with a conductive adhesive bonding layer interposed therebetween, the volume resistivity of which is 1.0×10−2 Ωcm or less.

摘要翻译： 静电吸盘装置包括静电吸盘部，金属基部和电介质板。 静电吸盘部具有基板，其主面作为板状试样的安装面，内置于基板的静电吸附内部电极，以及向静电吸引部施加直流电压的电源端子， 吸附内电极。 这里，电介质板被固定到形成在金属基部中的凹部。 电介质板和静电卡盘部分之间插入绝缘粘合剂粘合层彼此粘合。 电介质板和凹部之间以导电性粘合剂层粘合地结合，其体积电阻率为1.0×10-2＆OHgr·cm以下。

公开(公告)号：US08178444B2

公开(公告)日：2012-05-15

申请号：US12363992

申请日：2009-02-02

申请人： Chishio Koshimizu ,  Taichi Hirano ,  Masanobu Honda ,  Shinji Himori

发明人： Chishio Koshimizu ,  Taichi Hirano ,  Masanobu Honda ,  Shinji Himori

IPC分类号： H01L21/311 ,  H01L21/302

CPC分类号： H01L21/67109 ,  H01J37/32009 ,  H01J37/3255 ,  H01J37/32724 ,  H01L21/67248 ,  H01L21/6831

摘要： A substrate processing method that can eliminate unevenness in the distribution of plasma. The method is for a substrate processing apparatus that has a processing chamber in which a substrate is housed, a mounting stage that is disposed in the processing chamber and on which the substrate is mounted, and an electrode plate that is disposed in the processing chamber such as to face the mounting stage, the electrode plate being made of silicon and connected to a radio-frequency power source, and carries out plasma processing on the substrate. In the plasma processing, the temperature of the electrode plate is measured, and based on the measured temperature, the temperature of the electrode plate is maintained lower than a critical temperature at which the specific resistance value of the silicon starts changing.

摘要翻译： 能够消除等离子体分布不均匀的基板处理方法。 该方法是用于具有容纳基板的处理室的基板处理装置，设置在处理室中并安装有基板的安装台以及设置在处理室中的电极板 为了面对安装台，电极板由硅制成并连接到射频电源，并对基片执行等离子体处理。 在等离子体处理中，测量电极板的温度，并且基于测量的温度，电极板的温度保持低于硅的比电阻值开始变化的临界温度。

公开(公告)号：US20060221540A1

公开(公告)日：2006-10-05

申请号：US11392811

申请日：2006-03-30

申请人： Shinji Himori ,  Tatsuo Matsudo

发明人： Shinji Himori ,  Tatsuo Matsudo

IPC分类号： H01T23/00

CPC分类号： H01J37/32082 ,  H01J37/32091 ,  H01J37/32532 ,  H01J37/32568

摘要： A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. The second electrode includes a plurality of conductive segments separated from each other and facing the first electrode. An RF power supply is configured to apply an RF power to the first electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma by the RF electric field. A DC power supply is configured to apply a DC voltage to at least one of the segments of the second electrode.

公开(公告)号：US20120247677A1

公开(公告)日：2012-10-04

申请号：US13434989

申请日：2012-03-30

申请人： Shinji Himori ,  Norikazu Yamada ,  Ohse Takeshi

发明人： Shinji Himori ,  Norikazu Yamada ,  Ohse Takeshi

IPC分类号： H01L21/306 ,  H01L21/3065

CPC分类号： H01J37/32697 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32366 ,  H01J37/32642 ,  H01J37/32706 ,  H01J37/32724 ,  H01J2237/327

摘要： A substrate processing apparatus capable of improving a processing controllability in an etching process is provided. The substrate processing apparatus (10) includes a depressurized processing room (11); a susceptor (12) that is provided in the processing room (11) and configured to mount a wafer (W) thereon; a HF high frequency power supply (18) configured to apply a high frequency voltage for plasma generation to the susceptor (12); a LF high frequency power supply (20) configured to apply a high frequency voltage for a bias voltage generation to the susceptor (12); and a DC voltage applying unit (23) configured to apply a DC voltage of a rectangle-shaped wave to the susceptor (12).

摘要翻译： 提供了能够提高蚀刻处理中的处理可控性的基板处理装置。 基板处理装置（10）具有减压处理室（11）。 设置在处理室（11）中并构造成在其上安装晶片（W）的感受体（12）; HF高频电源（18），被配置为向所述基座（12）施加用于等离子体产生的高频电压; LF高频电源（20），被配置为向所述基座（12）施加偏置电压产生的高频电压; 以及直流电压施加单元（23），被配置为向所述基座（12）施加矩形波的直流电压。

公开(公告)号：US08114247B2

公开(公告)日：2012-02-14

申请号：US12941701

申请日：2010-11-08

申请人： Shosuke Endoh ,  Shinji Himori

发明人： Shosuke Endoh ,  Shinji Himori

IPC分类号： H01L21/3065 ,  H01L21/205

CPC分类号： H01L21/67069 ,  H01J37/32642 ,  Y10T279/23

摘要： A plasma processing apparatus and a focus ring enables to perform uniform plasma processing over the entire surface of a substrate to be processed to thereby improve in-surface uniformity of plasma processing compared with conventional cases. The focus ring is disposed on a susceptor 2, which serves to mount thereon a semiconductor wafer W and further functions as a lower electrode, to surround a periphery of the semiconductor wafer W. The focus ring 6 includes a ring member of a thin plate shape disposed to surround the periphery of the wafer W while maintaining a gap therebetween and a lower ring body installed below the semiconductor wafer and the ring member of the thin plate shape.

摘要翻译： 等离子体处理装置和聚焦环能够在待处理的基板的整个表面上进行均匀的等离子体处理，从而提高等离子体处理的表面均匀性，与常规情况相比。 聚焦环设置在基座2上，该基座2用于在其上安装半导体晶片W，并且还用作下部电极，以围绕半导体晶片W的周围。聚焦环6包括薄板形状的环形构件 设置成围绕晶片W的周边保持间隙，并且安装在半导体晶片下方的下环体和薄板形状的环构件。

公开(公告)号：US20110031217A1

公开(公告)日：2011-02-10

申请号：US12848342

申请日：2010-08-02

申请人： Shinji Himori

发明人： Shinji Himori

IPC分类号： H01L21/306

CPC分类号： H01J37/32165 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32715

摘要： A plasma processing apparatus includes: a processing chamber that accommodates a substrate therein; a lower electrode positioned within the processing chamber and serving as a mounting table; an upper electrode positioned to face the lower electrode within the processing chamber; a first high frequency power supply that applies high frequency power for plasma generation of a first frequency to the lower electrode or the upper electrode; a second high frequency power supply that applies high frequency power for ion attraction of a second frequency lower than the first frequency to the lower electrode; at least one bias distribution control electrode positioned at least in a peripheral portion above the lower electrode; and at least one bias distribution control power supply that applies an AC voltage or a square wave voltage of a third frequency lower than the second frequency to the at least one bias distribution control electrode.

摘要翻译： 一种等离子体处理装置，包括：处理室，其容纳基板; 位于处理室内并用作安装台的下电极; 位于处理室内面向下电极的上电极; 第一高频电源，其将用于等离子体产生第一频率的高频功率施加到下电极或上电极; 第二高频电源，其将高频功率施加到低于第一频率的第二频率的离子吸引到下电极; 至少一个偏置分布控制电极，至少位于下电极上方的周边部分中; 以及至少一个偏压分配控制电源，其将低于第二频率的第三频率的AC电压或方波电压施加到至少一个偏置分配控制电极。

公开(公告)号：US07585386B2

公开(公告)日：2009-09-08

申请号：US11195803

申请日：2005-08-03

申请人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

发明人： Katsuya Okumura ,  Shinji Himori ,  Kazuya Nagaseki ,  Hiroki Matsumaru ,  Shoichiro Matsuyama ,  Toshiki Takahashi

IPC分类号： H01L21/00 ,  C23C16/00

CPC分类号： H01L21/3065 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32541

摘要： A plasma processing apparatus for performing a plasma process on a target substrate includes a process container configured to accommodate the target substrate and to reduce pressure therein. A first electrode is disposed within the process container. A supply system is configured to supply a process gas into the process container. An electric field formation system is configured to form an RF electric field within the process container so as to generate plasma of the process gas. A number of protrusions are discretely disposed on a main surface of the first electrode and protrude toward a space where the plasma is generated.

摘要翻译： 用于在目标衬底上执行等离子体处理的等离子体处理装置包括：配置成容纳目标衬底并减少其中的压力的​​处理容器。 第一电极设置在处理容器内。 供应系统被配置为将处理气体供应到处理容器中。 电场形成系统被配置为在处理容器内形成RF电场，以产生处理气体的等离子体。 多个突起离散地设置在第一电极的主表面上，朝向产生等离子体的空间突出。