MAGNETIC FIELD DETECTION APPARATUS AND CURRENT DETECTION APPARATUS

    公开(公告)号:US20220349921A1

    公开(公告)日:2022-11-03

    申请号:US17866859

    申请日:2022-07-18

    Abstract: A magnetic field detection apparatus includes a magnetoresistive effect element and a coil. The coil includes first and second tier parts opposed to each other in a first axis direction, with the magnetoresistive dal element interposed therebetween. The coil is configured to be supplied with a current and thereby configured to generate an induction magnetic field to be applied to the magnetoresistive effect element in a second axis direction. The first tier part includes first conductors extending in a third axis direction, arranged in the second axis direction and coupled in parallel to each other. The second tier part includes a second conductor or second conductors extending in the third axis direction, the second conductors being arranged in the second axis direction and coupled in parallel to each other. The first conductor each have a width smaller than a width of the second conductor or each of the second conductors.

    MAGNETIC FIELD DETECTION APPARATUS AND CURRENT DETECTION APPARATUS

    公开(公告)号:US20210181241A1

    公开(公告)日:2021-06-17

    申请号:US17081232

    申请日:2020-10-27

    Abstract: A magnetic field detection apparatus includes a magnetoresistive effect element and a conductor. The magnetoresistive effect element includes a magnetoresistive effect film extending in a first axis direction and including a first end part, a second end part, and an intermediate part between the first and second end parts. The conductor includes a first part and a second part that each extend in a second axis direction inclined with respect to the first axis direction. The conductor is configured to be supplied with a current and thereby configured to generate an induction magnetic field to be applied to the magnetoresistive effect film in a third axis direction orthogonal to the second axis direction. The first part and the second part respectively overlap the first end part and the second end part in a fourth axis direction orthogonal to both of the second axis direction and the third axis direction.

    MAGNETO-RESISTIVE EFFECT ELEMENT
    53.
    发明申请

    公开(公告)号:US20200300942A1

    公开(公告)日:2020-09-24

    申请号:US16896284

    申请日:2020-06-09

    Abstract: A magneto-resistive effect element includes a magnetization free layer, an intermediate layer, and a magnetization pinned layer. The magnetization free layer extends along a first plane. The intermediate layer extends along the first plane, and is stacked on the magnetization free layer. The magnetization pinned layer extends along the first plane, and is provided on side opposite to the magnetization free layer with the intermediate layer being interposed therebetween. Here, the magnetization free layer includes an end surface that has a maximum inclination angle of 42° or less relative to the first plane.

    MAGNETIC SENSOR AND POSITION DETECTION DEVICE

    公开(公告)号:US20190277660A1

    公开(公告)日:2019-09-12

    申请号:US16160144

    申请日:2018-10-15

    Abstract: A magnetic sensor generates a detection signal that varies according to the strength of a target magnetic field at a detection position in a reference plane. The magnetic sensor includes a magnetoresistive element. The magnetoresistive element includes a magnetization pinned layer having a magnetization in a first direction, and a free layer having a magnetization whose direction is variable according to the direction of an acting magnetic field, the acting magnetic field being a composite magnetic field of all magnetic fields acting on the free layer. The free layer has uniaxial magnetic anisotropy such that an easy axis of magnetization is oriented in a direction parallel to a second direction. In the reference plane, both of two directions orthogonal to the second direction are different from the direction of the target magnetic field.

    CPP-TYPE MAGNETORESISTIVE ELEMENT INCLUDING A REAR BIAS STRUCTURE AND LOWER SHIELDS WITH INCLINED MAGNETIZATIONS
    55.
    发明申请
    CPP-TYPE MAGNETORESISTIVE ELEMENT INCLUDING A REAR BIAS STRUCTURE AND LOWER SHIELDS WITH INCLINED MAGNETIZATIONS 有权
    CPP型磁阻元件,包括后置偏置结构和较小的带有磁化的电机

    公开(公告)号:US20140293475A1

    公开(公告)日:2014-10-02

    申请号:US13853927

    申请日:2013-03-29

    Abstract: An MR element suppressing a false writing into a medium with an MR part has a CPP structure. The MR part includes a nonmagnetic intermediate layer and first and second ferromagnetic layers so as to interpose the nonmagnetic intermediate layer. First and second shield layers respectively have an inclining magnetization structure of which a magnetization is inclined with regard to a track width direction. The first and second ferromagnetic layers are respectively, magnetically coupled with the first and second shield layers. A magnetization direction adjustment layer for adjusting at least a magnetization direction of the first ferromagnetic layer is positioned at a rear end surface side of the first ferromagnetic layer, which is opposite to a front end surface receiving a magnetic field detected in the MR part.

    Abstract translation: 抑制对具有MR部件的介质的错误写入的MR元件具有CPP结构。 MR部分包括非磁性中间层和第一和第二铁磁层,以便插入非磁性中间层。 第一和第二屏蔽层分别具有磁化相对于磁道宽度方向倾斜的倾斜磁化结构。 第一和第二铁磁层分别与第一和第二屏蔽层磁耦合。 用于调节至少第一铁磁层的磁化方向的磁化方向调整层位于与在MR部分中检测到的磁场接收的前端面相反的第一铁磁性层的后端面侧。

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