公开(公告)号：US20210272886A1

公开(公告)日：2021-09-02

申请号：US16806362

申请日：2020-03-02

Applicant: Texas Instruments Incorporated

Inventor： Thomas Dyer Bonifield

IPC: H01L23/498 ,  H01L23/64 ,  H01L25/065 ,  H01L25/00 ,  H01L21/48 ,  H01L23/00 ,  H01L49/02

Abstract: An isolator device includes a laminate die having a dielectric laminate material with a metal laminate layer on one side of the dielectric laminate material, the metal laminate layer being a patterned layer providing at least a first plate, including a dielectric layer over the first plate that includes an aperture exposing a portion of the first plate. An integrated circuit (IC) including a substrate having a semiconductor surface includes circuitry including a transmitter and/or a receiver, the IC including a top metal layer providing at least a second plate coupled to a node in the circuitry, with at least one passivation layer on the top metal layer. A non-conductive die attach (NCDA) material for attaching a side of the dielectric laminate material is opposite the metal laminate layer to the IC so that the first plate is at least partially over the second plate to provide a capacitor.

公开(公告)号：US20200312794A1

公开(公告)日：2020-10-01

申请号：US16832356

申请日：2020-03-27

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Jeffrey Alan West ,  Thomas Dyer Bonifield ,  Yoshihiro Takei ,  Mitsuhiro Sugimoto

IPC: H01L23/64 ,  H01L25/18

Abstract: A microelectronic device contains a high voltage component having an upper plate and a lower plate. The upper plate is isolated from the lower plate by a main dielectric between the upper plate and low voltage elements at a surface of the substrate of the microelectronic device. A lower-bandgap dielectric layer is disposed between the upper plate and the main dielectric. The lower-bandgap dielectric layer contains at least one sub-layer of silicon nitride having a refractive index between 2.11 and 2.23. The lower-bandgap dielectric layer extends beyond the upper plate continuously around the upper plate. The lower-bandgap dielectric layer has an isolation break surrounding the upper plate at a distance of at least twice the thickness of the lower-bandgap dielectric layer from the upper plate.

公开(公告)号：US20190324097A1

公开(公告)日：2019-10-24

申请号：US16502317

申请日：2019-07-03

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Erika Lynn Mazotti ,  Dok Won Lee ,  William David French ,  Byron J.R. Shulver ,  Thomas Dyer Bonifield ,  Ricky Alan Jackson ,  Neil Gibson

IPC: G01R33/04 ,  G01R33/00

Abstract: An integrated fluxgate device has a magnetic core disposed over a semiconductor substrate. A first winding is disposed in a first metallization level above and a second metallization level below the magnetic core, and is configured to generate a first magnetic field in the magnetic core. A second winding is disposed in the first and second metallization levels and is configured to generate a second magnetic field in the magnetic core. A third winding is disposed in the first and second metallization levels and is configured to sense a magnetic field in the magnetic core that is the net of the first and second magnetic fields.