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1.发明申请公开(公告)号：US20190324097A1
公开(公告)日：2019-10-24
申请号：US16502317
申请日：2019-07-03
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Erika Lynn Mazotti , Dok Won Lee , William David French , Byron J.R. Shulver , Thomas Dyer Bonifield , Ricky Alan Jackson , Neil Gibson
Abstract: An integrated fluxgate device has a magnetic core disposed over a semiconductor substrate. A first winding is disposed in a first metallization level above and a second metallization level below the magnetic core, and is configured to generate a first magnetic field in the magnetic core. A second winding is disposed in the first and second metallization levels and is configured to generate a second magnetic field in the magnetic core. A third winding is disposed in the first and second metallization levels and is configured to sense a magnetic field in the magnetic core that is the net of the first and second magnetic fields.
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公开(公告)号：US20170341934A1
公开(公告)日：2017-11-30
申请号：US15680996
申请日：2017-08-18
Applicant: Texas Instruments Incorporated
Inventor： Lee Alan Stringer , Mona Eissa , Byron J.R. Shulver , Sopa Chevacharoenkul , Mark R. Kimmich , Sudtida Lavangkul , Mark L. Jenson
CPC classification number: B81C1/00825 , B81C1/00365 , B81C2201/0138 , B81C2201/014 , G01R33/0047 , G01R33/0052 , G01R33/04
Abstract: A method comprises forming an etch stop layer, a first titanium layer, a magnetic core, a second titanium layer, and patterning the first and second titanium layers. The etch stop layer is formed above a substrate. The first titanium layer is formed on the etch stop layer. The magnetic core is formed on the first titanium layer. The second titanium layer has a first portion encapsulating the magnetic core with the first titanium layer, and a second portion interfacing with the first titanium layer beyond the magnetic core. The patterning of the first and second titanium layers includes forming a mask over a magnetic core region and etching the first and second titanium layers exposed by the mask using a titanium etchant and a titanium oxide etchant.
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公开(公告)号：US20170267521A1
公开(公告)日：2017-09-21
申请号：US15072852
申请日：2016-03-17
Applicant: Texas Instruments Incorporated
Inventor： Lee Alan Stringer , Mona Eissa , Byron J.R. Shulver , Sopa Chevacharoenkul , Mark R. Kimmich , Sudtida Lavangkul , Mark L. Jenson
CPC classification number: B81C1/00825 , B81C1/00365 , B81C2201/0138 , B81C2201/014 , G01R33/0047 , G01R33/0052 , G01R33/04
Abstract: A method comprises forming an etch stop layer, a first titanium layer, a magnetic core, a second titanium layer, and patterning the first and second titanium layers. The etch stop layer is formed above a substrate. The first titanium layer is formed on the etch stop layer. The magnetic core is formed on the first titanium layer. The second titanium layer has a first portion encapsulating the magnetic core with the first titanium layer, and a second portion interfacing with the first titanium layer beyond the magnetic core. The patterning of the first and second titanium layers includes forming a mask over a magnetic core region and etching the first and second titanium layers exposed by the mask using a titanium etchant and a titanium oxide etchant.
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