Thin-film forming apparatus having an automatic cleaning function for cleaning the inside
    51.
    发明申请
    Thin-film forming apparatus having an automatic cleaning function for cleaning the inside 审中-公开
    具有清洁内部的自动清洁功能的薄膜形成装置

    公开(公告)号:US20050139578A1

    公开(公告)日:2005-06-30

    申请号:US11068089

    申请日:2005-02-28

    CPC分类号: C23C16/4405

    摘要: A method of cleaning the inside of a reaction chamber includes reducing the temperature of a susceptor to 470° C. or lower for cleaning; contacting the inside of the reaction chamber including the showerhead with fluorine radicals; cleaning the unwanted deposits by the fluorine radicals, wherein gaseous aluminum fluoride is inhibited from being emitted from the susceptor and solidified on the showerhead by maintaining the temperature of the susceptor at 470° C. or lower; and raising the temperature of the susceptor to 500-650° C. for film formation.

    摘要翻译: 清洁反应室内部的方法包括将基座的温度降低至470℃以下进行清洗; 将包括喷头的反应室的内部与氟自由基接触; 通过氟基清洗不需要的沉积物,其中通过将基座的温度维持在470℃或更低,其中气态氟化铝被抑制从基座发射并固化在喷头上; 并将基座的温度提高到500-650℃以进行成膜。

    Source gas flow control and CVD using same
    52.
    发明申请
    Source gas flow control and CVD using same 审中-公开
    源气体流量控制和CVD使用相同

    公开(公告)号:US20050098906A1

    公开(公告)日:2005-05-12

    申请号:US10928517

    申请日:2004-08-27

    摘要: A source-gas supply apparatus for supplying a source gas into a CVD reactor includes: a reservoir for storing a liquid material; a gas flow path connected the reservoir and the CVD reactor; a sonic nozzle disposed in the gas flow path, through which the source gas is introduced into the CVD reactor; a pressure sensor disposed in the gas flow path upstream of the sonic nozzle; a flow control valve disposed in the gas flow path upstream of the pressure sensor; and a flow control circuit which receives a signal from the pressure sensor and outputs a signal to the flow control valve to adjust opening of the flow control valve as a function of the signal from the pressure sensor.

    摘要翻译: 用于将源气体供应到CVD反应器中的源气供给装置包括:用于储存液体材料的储存器; 连接储存器和CVD反应器的气体流路; 设置在所述气体流路中的声波喷嘴,所述源气体通过所述声波喷嘴被引入到所述CVD反应器中; 压力传感器,设置在声音喷嘴上游的气体流路中; 流量控制阀,设置在压力传感器上游的气体流路中; 以及流量控制电路,其接收来自压力传感器的信号,并将信号输出到流量控制阀,以根据来自压力传感器的信号来调节流量控制阀的开度。

    Increased and randomized output sampling to reduce positioning noise in a data storage system
    53.
    发明授权
    Increased and randomized output sampling to reduce positioning noise in a data storage system 有权
    增加和随机输出采样,以减少数据存储系统中的定位噪声

    公开(公告)号:US06344943B1

    公开(公告)日:2002-02-05

    申请号:US09280384

    申请日:1999-03-29

    IPC分类号: G11B5596

    摘要: A method and system for reducing positioning noise in a data storage system are provided. An access device is positioned over a data storage medium using a stream of bursts stored on the medium. The bursts are sensed at a frequency determined by the rate at which the medium is moved relative to a sensing device. Output positioning values are provided to position the access device at a frequency higher than the frequency at which the positioning bursts are sensed, and/or at random times. The random times may be calculated as random advances or delays from time points occurring at a fixed frequency.

    摘要翻译: 提供了一种用于降低数据存储系统中定位噪声的方法和系统。 访问设备使用存储在介质上的突发流来定位在数据存储介质上。 以由介质相对于感测装置移动的速率确定的频率感测脉冲串。 提供输出定位值以将访问设备定位在高于感测定位脉冲串的频率的频率处和/或随机时间。 随机时间可以被计算为在固定频率发生的时间点的随机前进或延迟。

    Susceptor for plasma CVD equipment and process for producing the same
    55.
    发明授权
    Susceptor for plasma CVD equipment and process for producing the same 失效
    等离子体CVD设备的受体和其制造方法

    公开(公告)号:US6063203A

    公开(公告)日:2000-05-16

    申请号:US88867

    申请日:1998-06-02

    申请人: Kiyoshi Satoh

    发明人: Kiyoshi Satoh

    CPC分类号: C23C16/4581

    摘要: Provided are a susceptor for a plasma CVD equipment, characterized in that the surface of the susceptor has raised and depressed portions which are continuously formed, and a steep protrusion is completely removed in the raised portion, and a method of roughening a surface of a susceptor for a plasma CVD equipment, which comprises a step of mechanically flattening the surface of the susceptor, a step of shot-blasting the surface of the thus-flattened susceptor, and a step of polishing the shot-blasted surface of the susceptor chemically, electrochemically and/or mechanically, a steep protrusion being completely removed from the surface of the susceptor, and an Ra value of the susceptor surface being 1 .mu.m.ltoreq.Ra.ltoreq.8 .mu.m. Since the susceptor of the present invention reduces a rate of contact between a wafer substrate and the susceptor surface, adsorption due to charging can be prevented. Since the protrusion is completely removed from the surface of the susceptor, there is no fear of particle contamination due to abrasion. Since the Ra value of the susceptor surface is not changed due to abrasion upon using the susceptor of the present invention, the process stability is improved, and the film-forming treatment can be conducted with a high reproducibility.

    摘要翻译: 提供了一种用于等离子体CVD设备的感受体,其特征在于,基座的表面具有连续形成的凸起和凹陷部分,并且在凸起部分中完全去除了陡峭的突起,以及使基座的表面粗糙化的方法 对于等离子体CVD设备,其包括使基座的表面机械平坦化的步骤,对这样平坦的基座的表面进行喷丸处理的步骤,以及化学地,电化学地研磨基座的喷丸表面的步骤 和/或机械地,从基座的表面完全去除陡峭的突起,并且基座表面的Ra值为1μm。 由于本发明的感受体降低了晶片基板和基座表面之间的接触速率,所以可以防止由于充电引起的吸附。 由于突起从基座的表面完全移除,所以不会因磨损而导致颗粒污染。 由于在使用本发明的基座时由于磨损导致基座表面的Ra值不变,所以工艺稳定性提高,成膜处理可以以高再现性进行。

    Thermal mass flow meter
    56.
    发明授权
    Thermal mass flow meter 失效
    热质量流量计

    公开(公告)号:US5347861A

    公开(公告)日:1994-09-20

    申请号:US020224

    申请日:1993-02-16

    申请人: Kiyoshi Satoh

    发明人: Kiyoshi Satoh

    CPC分类号: G01F1/6847

    摘要: The portions on the sides far to each other of two sensor coils wound around the outer circumferential portion of the conduit, through which the fluid passes, at the suitable interval are thermally joined through a thermal conductor and the thermal conductor is heated by means of a heater, whereby the flow rate of fluid can be accurately measured without being influenced by the posture error resulting from the convection.

    摘要翻译: 以适当的间隔缠绕在流体通过的导管的外周部分上的两个传感器线圈彼此远的两侧的部分通过热导体热连接,并且热导体借助于 加热器,从而可以精确地测量流体的流量,而不受由对流引起的姿态误差的影响。