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公开(公告)号:US20140158437A1
公开(公告)日:2014-06-12
申请号:US14178118
申请日:2014-02-11
Applicant: US SYNTHETIC CORPORATION
Inventor: Debkumar Mukhopadhyay , Kenneth E. Bertagnolli , Jair J. Gonzalez
IPC: E21B10/573 , E21B10/55 , B24D3/10
CPC classification number: E21B10/5735 , B22F7/06 , B22F2005/001 , B24D3/10 , C22C26/00 , E21B10/55 , E21B10/567 , Y10T428/24777
Abstract: In an embodiment, a polycrystalline diamond compact includes a substrate, and a polycrystalline diamond (“PCD”) table bonded to the substrate and including an exterior working surface, at least one lateral surface, and a chamfer extending between the exterior working surface and the at least one lateral surface. The PCD table includes bonded diamond grains defining interstitial regions. The PCD table includes a first region adjacent to the substrate and a second leached region adjacent to the first region and extending inwardly from the exterior working surface to a selected depth. At least a portion of the interstitial regions of the first region include an infiltrant disposed therein. The interstitial regions of the second leached region are substantially free of metal-solvent catalyst. The second region is defined by the exterior working surface, the lateral surface, the chamfer, and a generally horizontal boundary located below the chamfer.
Abstract translation: 在一个实施例中,多晶金刚石致密体包括基底和结合到基底的多晶金刚石(“PCD”)台,其包括外部工作表面,至少一个侧面和在外部工作表面和 至少一个侧面。 PCD表包括限定间隙区域的结合金刚石颗粒。 PCD台包括与基板相邻的第一区域和与第一区域相邻并从外部工作表面向内延伸到选定深度的第二浸出区域。 第一区域的间隙区域的至少一部分包括设置在其中的渗透剂。 第二浸出区域的间隙区域基本上不含金属 - 溶剂催化剂。 第二区域由位于倒角下方的外部工作表面,侧面,倒角和大致水平的边界限定。
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公开(公告)号:US12048985B1
公开(公告)日:2024-07-30
申请号:US17363410
申请日:2021-06-30
Applicant: US SYNTHETIC CORPORATION
Inventor: Debkumar Mukhopadhyay , Paul Douglas Jones , Daren Nathaniel Heaton , Kevin Alexander Shirley
CPC classification number: B24D3/06 , B24D18/0009
Abstract: Embodiments disclosed herein are directed to assemblies for forming polycrystalline diamond compacts and methods for forming the polycrystalline diamond compacts with the assemblies. An example assembly includes a substrate and a diamond material positioned adjacent to an interfacial surface of the substrate. The assembly also includes an enclosure defining a chamber. The substrate and the diamond material are disposed in the chamber. In an embodiment, the assembly includes a sealant and the sealant includes at least one of cobalt or a copper-nickel alloy. In an embodiment, the substrate includes a concave bottom surface that is opposite the interfacial surface.
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公开(公告)号:US12044075B2
公开(公告)日:2024-07-23
申请号:US17183478
申请日:2021-02-24
Applicant: US SYNTHETIC CORPORATION
Inventor: Kenneth E. Bertagnolli , David P. Miess , Jiang Qian , Jason K. Wiggins , Michael A. Vail , Debkumar Mukhopadhyay
IPC: E21B10/567 , B22F7/08 , C22C26/00 , E21B10/36 , E21B10/46 , E21B10/55 , E21B10/573 , B24D18/00 , F16C17/02 , F16C17/04 , F16C17/10 , F16C33/04 , F16C33/26
CPC classification number: E21B10/567 , B22F7/08 , C22C26/00 , E21B10/36 , E21B10/46 , E21B10/55 , E21B10/5735 , B22F2998/00 , B24D18/00 , F16C17/02 , F16C17/04 , F16C17/102 , F16C33/043 , F16C33/26 , F16C2352/00 , Y10T428/24612 , Y10T428/24996 , Y10T428/249967 , B22F2998/00 , C22C29/08
Abstract: In an embodiment, a method of fabricating a polycrystalline diamond compact is disclosed. The method includes sintering a plurality of diamond particles in the presence of a metal-solvent catalyst to form a polycrystalline diamond body; leaching the polycrystalline diamond body to at least partially remove the metal-solvent catalyst therefrom, thereby forming an at least partially leached polycrystalline diamond body; and subjecting an assembly of the at least partially leached polycrystalline diamond body and a cemented carbide substrate to a high-pressure/high-temperature process at a pressure to infiltrate the at least partially leached polycrystalline diamond body with an infiltrant. The pressure of the high-pressure/high-temperature process is less than that employed in the act of sintering of the plurality of diamond particles.
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公开(公告)号:US11839917B2
公开(公告)日:2023-12-12
申请号:US16644434
申请日:2019-09-11
Applicant: US SYNTHETIC CORPORATION
Inventor: Debkumar Mukhopadhyay
IPC: B22F7/06 , B22F3/14 , C22C29/02 , E21B10/567
CPC classification number: B22F7/06 , B22F3/14 , C22C29/02 , E21B10/567 , B22F2302/10 , B22F2302/406 , B22F2304/10
Abstract: Embodiments disclosed herein relate to polycrystalline diamond compacts that have a substrate including a cementing constituent constituting less than 13 weight percent (wt %) of the substrate, the cementing constituent including a cobalt alloy having and at least one alloying element, wherein the at least one alloying element constitutes less than 12 wt % of the substrate and wherein the cobalt constitutes less than 12 wt % of the substrate; and methods of making the same.
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公开(公告)号:US11224957B1
公开(公告)日:2022-01-18
申请号:US16672000
申请日:2019-11-01
Applicant: US SYNTHETIC CORPORATION
Inventor: Debkumar Mukhopadhyay , Kenneth E. Bertagnolli
Abstract: Embodiments of the invention relate to polycrystalline diamond compact (“PDC”) including a polycrystalline diamond (“PCD”) table that bonded to a cobalt-nickel alloy cemented carbide substrate. The cobalt-nickel alloy cemented carbide substrate provides both erosion resistance and corrosion resistance to the cemented carbide substrate. In an embodiment, a PDC includes a cemented carbide substrate including cobalt-nickel alloy cementing constituent. The PDC further includes a PCD table bonded to the cemented carbide substrate.
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公开(公告)号:US20210229177A1
公开(公告)日:2021-07-29
申请号:US16644434
申请日:2019-09-11
Applicant: US SYNTHETIC CORPORATION
Inventor: Debkumar Mukhopadhyay
IPC: B22F7/06 , E21B10/567 , B22F3/14 , C22C29/02
Abstract: Embodiments disclosed herein relate to polycrystalline diamond compacts that have a substrate including a cementing constituent constituting less than 13 weight percent (wt %) of the substrate, the cementing constituent including a cobalt alloy having and at least one alloying element, wherein the at least one alloying element constitutes less than 12 wt % of the substrate and wherein the cobalt constitutes less than 12 wt % of the substrate; and methods of making the same.
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公开(公告)号:US10961785B2
公开(公告)日:2021-03-30
申请号:US16667597
申请日:2019-10-29
Applicant: US SYNTHETIC CORPORATION
Inventor: Kenneth E. Bertagnolli , David P. Miess , Jiang Qian , Jason K. Wiggins , Michael A. Vail , Debkumar Mukhopadhyay
IPC: E21B10/567 , B22F7/08 , C22C26/00 , E21B10/573 , E21B10/46 , E21B10/55 , E21B10/36 , F16C33/04 , F16C17/02 , F16C17/04 , F16C33/26 , B24D18/00 , F16C17/10
Abstract: In an embodiment, a method of fabricating a polycrystalline diamond compact is disclosed. The method includes sintering a plurality of diamond particles in the presence of a metal-solvent catalyst to form a polycrystalline diamond body; leaching the polycrystalline diamond body to at least partially remove the metal-solvent catalyst therefrom, thereby forming an at least partially leached polycrystalline diamond body; and subjecting an assembly of the at least partially leached polycrystalline diamond body and a cemented carbide substrate to a high-pressure/high-temperature process at a pressure to infiltrate the at least partially leached polycrystalline diamond body with an infiltrant. The pressure of the high-pressure/high-temperature process is less than that employed in the act of sintering of the plurality of diamond particles.
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公开(公告)号:US20200256133A1
公开(公告)日:2020-08-13
申请号:US16787214
申请日:2020-02-11
Applicant: US SYNTHETIC CORPORATION
Inventor: Anne-Grethe Slotnaes , Daniel Scott , Debkumar Mukhopadhyay , Jeremy B. Lynn , Jiang Qian
IPC: E21B10/567 , F16C33/12
Abstract: Embodiments disclosed herein relate to superabrasive compacts, methods of making the same, and drill bits incorporating the same. For example, embodiments of a superabrasive compact disclosed herein (e.g., a PDC) may be formed by providing a superabrasive compact. The superabrasive compact includes a superabrasive body and a cemented carbide substrate bonded to the superabrasive body. The cemented carbide substrate includes a base surface, an interfacial surface bonded to the superabrasive body, and at least one peripheral surface extending between the base surface and the interfacial surface. After providing the superabrasive compact, the method includes lasing at least a portion of the peripheral surface of the cemented carbide substrate to form a corrosion-resistant layer
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公开(公告)号:US10508502B2
公开(公告)日:2019-12-17
申请号:US16358281
申请日:2019-03-19
Applicant: US SYNTHETIC CORPORATION
Inventor: Kenneth E. Bertagnolli , David P. Miess , Jiang Qian , Jason K. Wiggins , Michael A. Vail , Debkumar Mukhopadhyay
IPC: E21B10/55 , E21B10/573 , E21B10/46 , E21B10/567 , E21B10/36 , E21B10/56 , F16C33/26 , B22F7/08 , C22C26/00 , F16C33/04 , B24D18/00 , F16C17/02 , F16C17/04
Abstract: In an embodiment, a method of fabricating a polycrystalline diamond compact is disclosed. The method includes sintering a plurality of diamond particles in the presence of a metal-solvent catalyst to form a polycrystalline diamond body; leaching the polycrystalline diamond body to at least partially remove the metal-solvent catalyst therefrom, thereby forming an at least partially leached polycrystalline diamond body; and subjecting an assembly of the at least partially leached polycrystalline diamond body and a cemented carbide substrate to a high-pressure/high-temperature process at a pressure to infiltrate the at least partially leached polycrystalline diamond body with an infiltrant. The pressure of the high-pressure/high-temperature process is less than that employed in the act of sintering of the plurality of diamond particles.
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公开(公告)号:US10464273B2
公开(公告)日:2019-11-05
申请号:US15402925
申请日:2017-01-10
Applicant: US SYNTHETIC CORPORATION
Inventor: Kenneth E. Bertagnolli , Michael A. Vail , Jiang Qian , Jason K. Wiggins , Mark P. Chapman , Arnold D. Cooper , Debkumar Mukhopadhyay , Amy Leigh Rodriguez , Stephen Rudger Adams
Abstract: Embodiments disclosed herein relate to cell assemblies for fabricating superhard materials (e.g., used in a high-pressure cubic press) and methods of using the same. The disclosed cell assemblies include a plurality of internal anvils, at least some of which are positioned internally relative to a cell pressure medium of the cell assembly. Such a configuration for the cell assemblies may enable one or more of intensifying cell pressure, reducing processing time, or reducing costs for fabricating such superhard materials.
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