-
公开(公告)号：US11088274B2
公开(公告)日：2021-08-10
申请号：US14864340
申请日：2015-09-24
发明人： Zhongping Liao
摘要： A semiconductor device structure can include: (i) a first semiconductor layer having dopants of a first type; (ii) a second semiconductor layer having the dopants of the first type on the first semiconductor layer, where the second semiconductor layer is lightly-doped relative to the first semiconductor layer; (iii) first and second column regions spaced from each other in the second semiconductor layer, where the second column region is arranged between two of the first column regions; and (iv) first and second first sub-column regions laterally arranged in the second column region, where a doping concentration of the first sub-column region decreases in a direction from the first column region to the second sub-column region, and where a doping concentration of the second sub-column region decreases in a direction from the first column region to the first sub-column region.
-
公开(公告)号：US20210242784A1
公开(公告)日：2021-08-05
申请号：US17239831
申请日：2021-04-26
发明人： Xiangdong Yang , Xiaoru Xu , Yongjiang Bai , Zhiliang Hu
IPC分类号： H02M3/335
摘要： A control circuit for a flyback converter is configured to adjust a conduction time of an auxiliary switch of the flyback converter in accordance with a drain-source voltage of a main switch of the flyback converter when the main switch is turned on, in order to achieve zero-voltage switching of the main switch. The flyback converter can include: a main power stage having the main switch to control energy storage and transmission of a transformer; and a clamp circuit having an auxiliary switch to provide a release path for releasing energy of leakage inductance of the transformer.
-
公开(公告)号：US11073636B2
公开(公告)日：2021-07-27
申请号：US16190311
申请日：2018-11-14
发明人： Suyi Lin
IPC分类号： G01V8/12
摘要： An optical detection assembly can include: a light-emitting device and a photoelectric conversion device installed in parallel on a substrate, where light generated by the light-emitting device is irradiated onto an object, and the photoelectric conversion device is configured to convert a reflected light of the object into an electrical signal; and a housing formed by light shielding material installed on the substrate, where the housing includes a first chamber for accommodating the light-emitting device, a sidewall that separates the light-emitting device and the photoelectric conversion device, and at least one emitting light opening at the top of the first chamber and having an axis inclined at a tilt angle.
-
公开(公告)号：US20210226548A1
公开(公告)日：2021-07-22
申请号：US17145526
申请日：2021-01-11
发明人： Chaojun Chen , Jian Deng , Jin Jin
摘要： A method of controlling a synchronous rectifier circuit can include: adjusting a falling amplitude of a drive voltage of a synchronous rectifier switch in the synchronous rectifier circuit in a pull-down mode; adjusting a shielding time during which the synchronous rectifier switch is in a turn-off shielding mode and is not to be turned off; turning off the synchronous rectifier switch after a drain-source voltage of the synchronous rectifier switch reaches a turn-off threshold; and where the falling amplitude of the drive voltage in the pull-down mode and the shielding time for a current period are adjusted according to an operation state of the synchronous rectifier switch in a previous period.
-
公开(公告)号：US11050432B2
公开(公告)日：2021-06-29
申请号：US16849084
申请日：2020-04-15
摘要： A pseudo differential analog-to-digital converter includes: a first capacitor array and a second capacitor array respectively coupled to input terminals of an analog-to-digital circuit; where an output terminal of the first capacitor array receives a first reference voltage, and an output terminal of the second capacitor array receives a second reference voltage; and where a difference between the first and second reference voltages is set between zero and a peak value of an analog input signal.
-
公开(公告)号：US20210184009A1
公开(公告)日：2021-06-17
申请号：US17113305
申请日：2020-12-07
发明人： Jiakun Wang
IPC分类号： H01L29/423 , H01L29/417 , H01L29/78 , H01L29/40 , H01L29/66
摘要： A trench MOSFET can include: a semiconductor layer having a first doping type; a trench extending from an upper surface of the semiconductor layer to internal portion of the semiconductor layer; insulating layers and electrode conductors located in the trench; a body region having a second doping type in an upper region of the semiconductor layer adjacent to the trench; and a floating region having the first doping type located in a predetermined position of the semiconductor layer adjacent to both sides of the trench, where the floating region is located below the body region and is separated from the body region.
-
公开(公告)号：US11038423B2
公开(公告)日：2021-06-15
申请号：US16675452
申请日：2019-11-06
摘要： A frequency control circuit, applied in a switching converter, can be configured to: regulate an off time of a power transistor of the switching converter in one switching cycle according to an on time of the power transistor, or regulate the on time of the power transistor in one switching cycle according to the off time of the power transistor; and maintain an operating frequency of the switching converter to be within a predetermined range.
-
公开(公告)号：US11035723B2
公开(公告)日：2021-06-15
申请号：US15834332
申请日：2017-12-07
发明人： Kai Chun Huang
摘要： An optical package assembly can include: a first circuit board; a second circuit board and a first structure arranged on the first circuit board, where the second circuit board is adjacent to the first structure; and a second structure arranged on the second circuit board, where a thickness of the first structure is equal to a combined thickness of the second circuit board and the second structure.
-
公开(公告)号：US10998305B2
公开(公告)日：2021-05-04
申请号：US16537769
申请日：2019-08-12
发明人： Jianping Qiu , Yicheng Du , Meng Wang
IPC分类号： H01L27/02 , H01L27/088 , H02P7/03 , H01L29/08 , H01L29/78
摘要： A semiconductor die can include: first, second, third, and fourth transistors disposed at intervals, where each two of the first, second, third, and fourth transistors are separated by a separation region to form four separation regions; an isolation structure having a first doping structure of a first doping type, and a second doping structure of a second doping type, to absorb hole carriers and electron carriers flowing between the first, second, third, and fourth transistors; where the first doping structure is located in the separation region to isolate adjacent transistors in the first, second, third, and fourth transistors; and where at least a portion of the second doping structure is surrounded by the first doping structure, and the second doping structure is separated from the first doping structure.
-
公开(公告)号：US10978441B2
公开(公告)日：2021-04-13
申请号：US15711146
申请日：2017-09-21
发明人： Dengping Yin , Shijun Wang , Fei Yao
摘要： Disclosed a transient voltage suppressor and a method for manufacturing the same. According to the transient voltage suppressor, an additional gate stack layer is introduced based on the prior transient voltage suppressor, and the diffusion isolation regions are reused as the conductive vias, so that, the gate stack layer, the first doped region, the conductive vias, and the second semiconductor layer constitute a MOS transistor being coupled in parallel to the Zener diode or the avalanche diode of the transient voltage suppressor. When the current of the I/O terminal is relatively large, the MOS transistor is turned on to share part of the current of the I/O terminal through the Zener diode or the avalanche diode, thereby protecting the Zener diode or the avalanche diode from being damaged due to excessive current. Thus, the robustness of the transient voltage suppressor is improved without increasing the manufacture cost.
-
-
-
-
-
-
-
-
-
搜索结果
846 条记录 (耗时 0.025 秒)
