Abstract:
In order to automatically measure the thickness of coatings on a sample, a plurality of calibration curves are stored in a memory circuit beforehand, and X-ray fluorescence generated by irradiation of the sample with primary X-rays is detected by an X-ray fluorescence coating thickness gauge. The X-ray fluorescence is differentiated according to wavelength (energy) by a differentiating circuit. By this differential manipulation, the materials of a sample are identified. Based on the identified constituents of a sample, automatic selection can be made of the most probable and suitable calibration curve out of the plural number of calibration curves stored in a memory and finally coating thickness can be measured on the basis of the selected calibration curve and the intensity of X-ray fluorescence of the sample obtained by the coating thickness gauge.
Abstract:
The invention relates to a method for measuring the thicknesses of thin layers by X-ray fluorescence, in which a specimen having the layer to be studied is positioned in view and subsequently X-radiation is directed onto the layer to be studied and emitted fluorescent radiation is detected by means of a radiation detector and the layer thickness is determined, in which on positioning the specimen there is a focussing by adjusting a focussing element along its optical axis and the position of the focussing element is determined with the layer in focus. An apparatus for layer thickness measurement with X-ray fluorescence according to the invention having a X-ray tube, a detector and an observing device with a focussing element provides for the latter to be movably mounted along its optical axis and provided with a position measuring device. This obviates the need for having to move a workpiece-carrying table in such a way that the work surface comes to rest at a predetermined, specific measuring distance or spacing.
Abstract:
An apparatus for and a method of measuring at least one painted layer formed on a sample to be analyzed, which sample may be, for example, a galvanized steel including a substrate having the painted layer formed thereon with or without an intervention of a primer coated layer. In the practice of the invention, radiation is directed onto a surface of the painted layer so as to excite the sample. The intensity of resultant Compton scattering rays, the intensity of resultant fluorescent X-rays emitted from zinc contained in a plated zinc and the intensity of resultant fluorescent X-rays emitted from strontium contained in the primer coated layer are measured, and also the absorption of the fluorescent X-rays are taken into consideration, to provide a basis for calculation of the amount of paint coating forming the painted layer. In this way, the amount of primer and paint material both applied to the galvanized steel can be easily measured on a non-destructive basis.
Abstract:
A radiometer is described which coherently detects the thickness of oil films on water by converting continuous-frequency microwave or millimeter-wave brightness temperature versus frequency measurements from the frequency/wavenumber domain to the oil-film-thickness domain (received power versus film thickness) using Fourier-transform signal processing.
Abstract:
A non-invasive sensor system (50) for real-time in situ measurements of sheet resistance and thickness of conductive layers of a semiconductor wafer. The sensor (50) includes a microwave source (78) for generating a plurality of microwave signals. An emitter waveguide (52) receives the plurality of microwave signals from the microwave source (78) and emits the microwave signals in the direction of the semiconductor wafer (20) in fabrication chamber (18). The collector waveguide (84) detects the reflected microwave signals from the semiconductor wafer (20). A dual directional coupler (64) communicates with emitter waveguide (52) to direct the microwave signals to and from the emitter waveguide (52) and to generate a plurality of electrical signals that relate to semiconductor wafer (20), conductive layer (108), and deposition vapor physical characteristics. These physical characteristics include conductive layer thickness, resistivity, and substrate temperature. An alternative embodiment provides measurements of plasma vapor density and other interferometric parameters.
Abstract:
An apparatus for measuring the thickness of a coating on a work piece includes a table for receiving and positioning the coated work piece and beta-ray backscatter measuring instrument for determining the thickness of the coating on the work piece. An air gauge measures accurately the position of the surface of the work piece and causes the measuring detector instrument to be positioned a predetermined distance above the surface of the work piece. The air gauge includes an orifice having a known positional relationship with respect to the beta-ray measuring instrument. The air gauge positions the orifice a known distance above a particular location on the surface of the work piece. The apparatus then positions the beta-ray measuring instrument over that particular location on the work piece, at the predetermined distance above the surface.
Abstract:
A thickness determination method for organic films comprises the steps of: irradiating an organic film to be measured with x-rays at a certain angle of incidence, finding an angle of reflection at which the x-ray intensity reaches a peak, and finding the thickness of the film from the angle of this peak.
Abstract:
An ice measurement instrument includes a waveguide operating in a transmission mode passing energy from an input port to an output port. The resonant frequency of the waveguide depends on the presence and/or thickness of ice at a measuring location. The energy applied to the input port is swept in frequency from a first frequency to a second frequency at or above an ice-free resonant frequency of said waveguide, and back to said first frequency. Energy received at the output port is peak detected to provide a detection signal with four recognizable transitions identifying a pair of peaks which correspond to the resonant frequency of the waveguide. The time delay between these peaks can be used, in comparison with the time delay corresponding to an ice-free condition, to determine ice thickness.
Abstract:
A fluorescent X-ray film thickness gauge comprises an X-ray tube for irradiating X-rays along an X-ray axis to a sample having a film coating whose thickness is to be measured, a detector for detecting fluorescent X-rays emitted from the sample, viewing means including a mirror for enabling an observer to view along the X-ray axis a target spot on the sample at which the X-ray beam is to be directed, and a collimator for collimating the X-rays into an X-ray beam and directing the X-ray beam along the X-ray axis to the target spot on the sample. In a preferred embodiment, the collimator and mirror are both mounted on a displaceable shutter member which is displaceable between a viewing position, in which the mirror is positioned along the X-ray axis to enable viewing of the target spot on the sample while the shutter member blocks the X-rays from irradiating the sample, and an irradiating position, in which the collimator is positioned along the X-ray axis to direct the X-ray beam to the target spot on the sample.
Abstract:
An aperture device for measuring thin films has an aperture ring, of a material and thickness that is impenetrable by the radiation from radionuclides. The ring has a passage for emitted and reflected radiation extending approximately perpendicular to said ring, and a radiation device consisting of at least one collimating radiation source holder comprising a tube of a predetermined diameter that is permeable to radiation in the forward direction and has sides and a back that are impermeable to radiation and houses a radionuclide. The forward end surface of the tube lies behind the forward end surface of the passage. The cross-section of the passage is large compared to the cross-section of the radionuclide. A partition divides the passage into at least two chambers that are open at their rearward and forward ends. The partition has partition walls that are impermeable to radiation. The radiation source holder is arranged in one of the chambers, the cross-section of which chamber is a multiple of the cross-section of the radiation source holder. The forward end surface of the radiation source holder lies behind the forward end surface of the partition.