DUAL-AXIS ANISOTROPIC MAGNETORESISTIVE SENSORS
    52.
    发明申请
    DUAL-AXIS ANISOTROPIC MAGNETORESISTIVE SENSORS 有权
    双轴异相磁传感器

    公开(公告)号:US20130099783A1

    公开(公告)日:2013-04-25

    申请号:US13278827

    申请日:2011-10-21

    Applicant: Jan KUBIK

    Inventor: Jan KUBIK

    CPC classification number: G01R33/096 G01R33/0005 G01R33/093

    Abstract: An integrated dual-axis anisotropic magnetoresistive sensor can include first and second sensor units. A resistor bridge of the first sensor unit can include a plurality of magnetoresistors, each having at least one strip of anisotropic magnetoresistive material with a longitudinal axis substantially parallel to the technological anisotropy axis of the material. A resistor bridge of the second sensor unit can include a plurality of magnetoresistors having a plurality of strips of the anisotropic magnetoresistive material, the plurality of strips including a first subset having longitudinal axes aligned at a first angle to the technological anisotropy axis and a second subset having longitudinal axes aligned at a second angle to the technological anisotropy axis. The second angle can have the same magnitude as the first, but be rotated in an opposite direction from the technological anisotropy axis.

    Abstract translation: 集成的双轴各向异性磁阻传感器可以包括第一和第二传感器单元。 第一传感器单元的电阻桥可以包括多个磁阻电阻器,每个磁阻器具有至少一个各向异性磁阻材料条,纵向轴线基本上平行于材料的各向异性轴线。 第二传感器单元的电阻桥可以包括具有多个各向异性磁阻材料条的多个磁阻电阻器,所述多个条带包括具有以技术各向异性轴线成一定角度的纵向轴线的第一子集,以及第二子集 其纵向轴线以与技术各向异性轴线成第二角度排列。 第二角度可以具有与第一角度相同的大小,但是可以沿与技术各向异性轴线相反的方向旋转。

    Magnatoresistive Sensing Component and Agnatoresistive Sensing Device
    53.
    发明申请
    Magnatoresistive Sensing Component and Agnatoresistive Sensing Device 有权
    磁阻电感元件和电阻传感器

    公开(公告)号:US20130082699A1

    公开(公告)日:2013-04-04

    申请号:US13625009

    申请日:2012-09-24

    CPC classification number: G01R33/096 G01R33/0011 G01R33/0206 G01R33/09

    Abstract: A magnetoresistive sensing component includes a strip of horizontal magnetoresistive layer, a conductive part and a first magnetic-field-sensing layer. The strip of horizontal magnetoresistive layer is disposed above a surface of a substrate and has a first side and a second side opposite the first side along its extending direction. The conductive part is disposed above or below the horizontal magnetoresistive layer and electrically coupled to the horizontal magnetoresistive layer. The conductive part and the horizontal magnetoresistive layer together form at least an electrical current path. The first magnetic-field-sensing layer is not parallel to the surface of the substrate and magnetically coupled to the horizontal magnetoresistive layer at the first side of the horizontal magnetoresistive layer.

    Abstract translation: 磁阻感测部件包括水平磁阻层条,导电部分和第一磁场感测层。 水平磁阻层的条带设置在基板的表面上方,并且沿其延伸方向具有与第一侧相对的第一侧和第二侧。 导电部分设置在水平磁阻层的上方或下方,并电耦合到水平磁阻层。 导电部分和水平磁阻层一起形成至少一个电流路径。 第一磁场感测层不平行于衬底的表面并且磁耦合到水平磁阻层的第一侧处的水平磁阻层。

    MAGNETORESISTIVE SENSOR AND MANUFACTURING METHOD THEREOF
    54.
    发明申请
    MAGNETORESISTIVE SENSOR AND MANUFACTURING METHOD THEREOF 有权
    磁传感器及其制造方法

    公开(公告)号:US20130000136A1

    公开(公告)日:2013-01-03

    申请号:US13608965

    申请日:2012-09-10

    CPC classification number: G01C17/28 B82Y25/00 G01R33/093 G01R33/096

    Abstract: A magnetoresistive element formed by a strip of magnetoresistive material which extends on a substrate of semiconductor material having an upper surface. The strip comprises at least one planar portion which extends parallel to the upper surface, and at least one transverse portion which extends in a direction transverse to the upper surface. The transverse portion is formed on a transverse wall of a dig. By providing a number of magnetoresistive elements perpendicular to one another it is possible to obtain an electronic compass that is insensitive to oscillations with respect to the horizontal plane parallel to the surface of the Earth.

    Abstract translation: 一种由具有上表面的半导体材料的衬底上延伸的磁阻材料条形成的磁阻元件。 该条带包括平行于上表面延伸的至少一个平面部分和至少一个横向于上表面的方向延伸的横向部分。 横向部分形成在挖掘的横向壁上。 通过提供垂直于彼此的多个磁阻元件,可以获得对于平行于地球表面的水平面的振荡不敏感的电子罗盘。

    Calibration of an AMR sensor
    57.
    发明授权
    Calibration of an AMR sensor 有权
    校准AMR传感器

    公开(公告)号:US08195423B2

    公开(公告)日:2012-06-05

    申请号:US12667237

    申请日:2008-05-08

    Applicant: Hans Von Zon

    Inventor: Hans Von Zon

    Abstract: A joystick module has a joystick and a sensor for generating a signal in response to sensing a magnetic field representative of a position and/or orientation of the joystick. Using a linear dependence of the sensor's sensitivity on a distance between the joystick and the sensor, the sensor's signal representative of a tilt angle of the joystick can be calibrated in a simple manner.

    Abstract translation: 操纵杆模块具有用于响应于感测代表操纵杆的位置和/或取向的磁场而产生信号的操纵杆和传感器。 使用传感器灵敏度对操纵杆和传感器之间的距离的线性关系,可以简单的方式校正代表操纵杆倾斜角度的传感器信号。

    XMR ANGLE SENSORS
    58.
    发明申请
    XMR ANGLE SENSORS 有权
    XMR角度传感器

    公开(公告)号:US20120126806A1

    公开(公告)日:2012-05-24

    申请号:US12950456

    申请日:2010-11-19

    Applicant: Juergen Zimmer

    Inventor: Juergen Zimmer

    Abstract: Embodiments relate to xMR sensors, sensor elements and structures, and methods. In an embodiment, a sensor element comprises a non-elongated xMR structure; and a plurality of contact regions formed on the xMR structure spaced apart from one another such that a non-homogeneous current direction and current density distribution are induced in the xMR structure when a voltage is applied between the plurality of contact regions.

    Abstract translation: 实施例涉及xMR传感器,传感器元件和结构以及方法。 在一个实施例中,传感器元件包括非细长xMR结构; 以及形成在xMR结构上彼此间隔开的多个接触区域,使得当在多个接触区域之间施加电压时,在xMR结构中感应出非均匀的电流方向和电流密度分布。

    XMR SENSORS WITH HIGH SHAPE ANISOTROPY
    59.
    发明申请
    XMR SENSORS WITH HIGH SHAPE ANISOTROPY 有权
    XMR传感器具有高形状异相性

    公开(公告)号:US20120119735A1

    公开(公告)日:2012-05-17

    申请号:US12946460

    申请日:2010-11-15

    Abstract: Embodiments relate to xMR sensors having very high shape anisotropy. Embodiments also relate to novel structuring processes of xMR stacks to achieve very high shape anisotropies without chemically affecting the performance relevant magnetic field sensitive layer system while also providing comparatively uniform structure widths over a wafer, down to about 100 nm in embodiments. Embodiments can also provide xMR stacks having side walls of the performance relevant free layer system that are smooth and/or of a defined lateral geometry which is important for achieving a homogeneous magnetic behavior over the wafer.

    Abstract translation: 实施例涉及具有非常高的形状各向异性的xMR传感器。 实施例还涉及xMR堆叠的新结构化过程,以实现非常高的形状各向异性,而不会在性能相关的磁场敏感层系统中产生化学影响,同时在晶片上提供相对均匀的结构宽度,在实施例中可降低至约100nm。 实施例还可以提供具有性能相关自由层系统的侧壁的xMR堆叠,其平滑和/或限定的横向几何形状对于在晶片上实现均匀的磁性行为是重要的。

    GMR SENSORS HAVING REDUCED AMR EFFECTS
    60.
    发明申请
    GMR SENSORS HAVING REDUCED AMR EFFECTS 有权
    具有降低AMR效应的GMR传感器

    公开(公告)号:US20110316533A1

    公开(公告)日:2011-12-29

    申请号:US12824687

    申请日:2010-06-28

    CPC classification number: G01R33/09 B82Y25/00 G01R33/093 G01R33/096 H01L43/08

    Abstract: Embodiments related to giant magneto resistance (GMR) angle sensor layouts having reduced anisotropic magneto resistance (AMR) effects. Embodiments provide GMR angle sensor layouts that reduce or eliminate distortion related to AMR effects, can be more easily scaled up or down, and are more compact to use available surface area more efficiently.

    Abstract translation: 具有减小的各向异性磁阻(AMR)效应的巨磁电阻(GMR)角度传感器布局的实施例。 实施例提供减少或消除与AMR效应相关的失真的GMR角度传感器布局,可以更容易地按比例放大或缩小,并且更紧凑以更有效地使用可用表面积。

Patent Agency Ranking