TELEPOWERED CONTACTLESS CARD
    682.
    发明公开

    公开(公告)号:US20230223948A1

    公开(公告)日:2023-07-13

    申请号:US18069459

    申请日:2022-12-21

    CPC classification number: H03M1/124 H04B5/0031

    Abstract: The present disclosure concerns an electronic device connected to an antenna. The electronic device delivers a first amplitude-modulated analog signal of a signal captured by the antenna, the capture signal associated with an electromagnetic field exhibiting intervals at a minimum level. The electronic device includes a first circuit, a second circuit, and a third circuit. The first circuit delivers a second analog signal by rectification and filters the first analog signal. The second circuit delivers a first binary signal based on the demodulation of the second analog signal. The third circuit couples the antenna to a resistor during each pause. The resistance value of the resistor depends on the maximum amplitude of the electromagnetic field before the pause.

    Electronic circuit
    687.
    发明授权

    公开(公告)号:US11581303B2

    公开(公告)日:2023-02-14

    申请号:US16869840

    申请日:2020-05-08

    Abstract: An electronic circuit includes a first electronic component formed above a buried insulating layer of a substrate and a second electronic component formed under the buried insulating layer. The insulating layer is thoroughly crossed by a semiconductor well. The semiconductor well electrically couples a terminal of the first electronic component to a terminal of the second electronic component.

    Method and device for determining the phase shift between two signals

    公开(公告)号:US11563424B2

    公开(公告)日:2023-01-24

    申请号:US17496548

    申请日:2021-10-07

    Abstract: In an embodiment, a method for determining the phase shift between a first signal and a second signal includes: delivering the first signal to a first input of a 90° hybrid coupler; delivering the second signal to a second input of the 90° hybrid coupler; determining a first piece of information relating to a power of a first output signal delivered to a first output of the 90° hybrid coupler; determining a second piece of information relating to a power of a second output signal delivered to a second output of the coupler; and adjusting the phase of the second signal until obtaining a calibrated phase for which the first piece of information is substantially equal to the second piece of information, wherein the first and second signals have identical frequencies, and wherein the phase shift between the first signal and the second signal is equal to the calibrated phase.

    RADIO FREQUENCY POWER AMPLIFIER
    689.
    发明申请

    公开(公告)号:US20220360236A1

    公开(公告)日:2022-11-10

    申请号:US17662542

    申请日:2022-05-09

    Abstract: According to an embodiment, An integrated circuit comprising a first cascode radio frequency (RF) power amplifier that includes a first common source transistor having a gate configured to receive a first RF signal, and a source connected to a neutral point; a first common gate transistor having a gate and a drain connected to a power source node, and a source connected to a drain of the first common source transistor; and a first resistor coupled between a bulk of the first common gate transistor and a first bulk bias node configured to provide a voltage that is greater than or equal to a voltage at the source of the first common gate transistor, wherein the first resistor is configured to obtain a floating point.

    Electronic device for ESD protection

    公开(公告)号:US11444077B2

    公开(公告)日:2022-09-13

    申请号:US16696045

    申请日:2019-11-26

    Abstract: A semiconductor device includes a thyristor disposed in a semiconductor body. The thyristor has an anode, a cathode, a first bipolar transistor located on an anode side, and a second bipolar transistor located on a cathode side. The first and second bipolar transistors are nested and connected between the anode and the cathode. A MOS transistor is disposed in the semiconductor body. The MOS transistor is coupled between a collector region and an emitter region of the second bipolar transistor. The MOS transistor has a gate region connected to the cathode via a resistive semiconductor region that incorporates at least a part of a base region of the second bipolar transistor.

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