公开(公告)号：US20050136580A1

公开(公告)日：2005-06-23

申请号：US10745313

申请日：2003-12-22

Applicant: Luigi Colombo ,  James Chambers ,  Mark Visokay ,  Antonio Rotondaro

Inventor： Luigi Colombo ,  James Chambers ,  Mark Visokay ,  Antonio Rotondaro

IPC: H01L21/336 ,  H01L21/8238 ,  H01L29/51 ,  H01L29/78 ,  H01L21/00 ,  H01L21/4763 ,  H01L21/8234

CPC classification number: H01L29/7833 ,  H01L21/823828 ,  H01L21/823857 ,  H01L29/51 ,  H01L29/6656 ,  H01L29/6659

Abstract: The present invention pertains to forming a transistor in the absence of hydrogen, or in the presence of a significantly reduced amount of hydrogen. In this manner, a high-k material can be utilized to form a gate dielectric layer in the transistor and facilitate device scaling while mitigating defects that can be introduced into the high-k material by the presence of hydrogen and/or hydrogen containing compounds.

Abstract translation: 本发明涉及在不存在氢的情况下形成晶体管，或者在显着减少量的氢的存在下。 以这种方式，可以利用高k材料在晶体管中形成栅极电介质层，并且便于器件缩放，同时减轻可通过存在氢和/或含氢化合物引入高k材料的缺陷。

公开(公告)号：US20050095764A1

公开(公告)日：2005-05-05

申请号：US10696539

申请日：2003-10-29

Applicant: James Chambers ,  Mark Visokay

Inventor： James Chambers ,  Mark Visokay

IPC: H01L21/00 ,  H01L21/336 ,  H01L29/76 ,  H01L29/78

CPC classification number: H01L29/7833 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/66795

Abstract: Fabrication methods are presented in which a semiconductor body is deposited in a cavity of a temporary form structure above a semiconductor starting structure. The formed semiconductor body can be epitaxial silicon deposited in the form cavity over a silicon substrate, and includes three body portions, two of which are doped to form source/drains, and the other forming a transistor channel that overlies the starting structure. A gate structure is formed along one or more sides of the channel body portion to create a MOS transistor.

Abstract translation: 提出了制造方法，其中将半导体体沉积在半导体起始结构之上的临时形式结构的空腔中。 所形成的半导体本体可以是外延硅沉积在硅衬底上的空腔中，并且包括三个主体部分，其中两个被掺杂以形成源极/漏极，另一个形成覆盖起始结构的晶体管沟道。 栅极结构沿通道主体部分的一侧或多侧形成以形成MOS晶体管。