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    MAGNETORESISTIVE ELEMENTS AND MEMORY DEVICES INCLUDING THE SAME
    61.
    发明申请
    MAGNETORESISTIVE ELEMENTS AND MEMORY DEVICES INCLUDING THE SAME 有权
    磁性元件和包括其的存储器件

    公开(公告)号：US20130161769A1

    公开(公告)日：2013-06-27

    申请号：US13591809

    申请日：2012-08-22

    Applicant: Sung-chul LEE ,  Kwang-seok KIM ,  Kee-won KIM ,  Young-man JANG ,  Ung-hwan PI

    Inventor： Sung-chul LEE ,  Kwang-seok KIM ,  Kee-won KIM ,  Young-man JANG ,  Ung-hwan PI

    IPC: H01L29/82 ,  G11B5/39

    CPC classification number: G11C11/161 ,  G11C11/15 ,  H01L43/08 ,  Y10T428/1121

    Abstract: Magnetoresistive elements, and memory devices including the same, include a free layer having a changeable magnetization direction, a pinned layer facing the free layer and having a fixed magnetization direction, and an auxiliary element on a surface of the pinned layer. The auxiliary element has a width smaller than a width of the pinned layer, and a magnetization direction fixed to a direction the same as a direction of the fixed magnetization direction of the pinned layer.

    Abstract translation: 磁阻元件和包括它们的存储器件包括具有可变磁化方向的自由层，面向自由层的固定层并且具有固定的磁化方向，以及在被钉扎层的表面上的辅助元件。 辅助元件的宽度小于钉扎层的宽度，并且固定在与被钉扎层的固定磁化方向的方向相同的方向上的磁化方向。

    Oscillators and methods of operating the same
    63.
    发明授权
    Oscillators and methods of operating the same 有权
    振荡器和操作方法相同

    公开(公告)号：US08421545B2

    公开(公告)日：2013-04-16

    申请号：US13099684

    申请日：2011-05-03

    Applicant: Kwang-seok Kim ,  Sung-chul Lee ,  Kee-won Kim ,  Sun-ae Seo ,  Ung-hwan Pi

    Inventor： Kwang-seok Kim ,  Sung-chul Lee ,  Kee-won Kim ,  Sun-ae Seo ,  Ung-hwan Pi

    IPC: H03L7/26 ,  H03B28/00 ,  H01L29/82

    CPC classification number: H03B15/006

    Abstract: Oscillators and methods of operating the same, the oscillators include a pinned layer having a fixed magnetization direction, a first free layer over the pinned layer, and a second free layer over the first free layer. The oscillators are configured to generate a signal using precession of a magnetic moment of at least one of the first and second free layers.

    Abstract translation: 振荡器及其操作方法，振荡器包括具有固定磁化方向的钉扎层，被钉扎层上的第一自由层，以及在第一自由层上的第二自由层。 振荡器被配置为使用第一和第二自由层中的至少一个的磁矩的进动来产生信号。

    Oscillators and methods of manufacturing and operating the same
    64.
    发明申请
    Oscillators and methods of manufacturing and operating the same 有权
    振荡器和制造和操作方法相同

    公开(公告)号：US20120068779A1

    公开(公告)日：2012-03-22

    申请号：US12929932

    申请日：2011-02-25

    Applicant: Sung-chul Lee ,  Sun-ae Seo ,  Un-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

    Inventor： Sung-chul Lee ,  Sun-ae Seo ,  Un-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

    IPC: H03B5/30 ,  H01L43/12

    CPC classification number: H01L43/12 ,  H01L43/08 ,  H03B15/006

    Abstract: Oscillators and methods of manufacturing and operating the same are provided, the oscillators include a pinned layer, a free layer and a barrier layer having at least one filament between the pinned layer and the free layer. The pinned layer may have a fixed magnetization direction. The free layer corresponding to the pinned layer. The at least one filament in the barrier layer may be formed by applying a voltage between the pinned layer and the free layer. The oscillators may be operated by inducing precession of a magnetic moment of at least one region of the free layer that corresponds to the at least one filament, and detecting a resistance change of the oscillator due to the precession.

    Abstract translation: 提供了振荡器和制造和操作振荡器的方法，振荡器包括钉扎层，自由层和在被钉扎层和自由层之间具有至少一根细丝的阻挡层。 被钉扎层可以具有固定的磁化方向。 对应于钉扎层的自由层。 可以通过在被钉扎层和自由层之间施加电压来形成阻挡层中的至少一个细丝。 振荡器可以通过引起对应于至少一根灯丝的自由层的至少一个区域的磁矩的进动并且检测由于进动而引起的振荡器的电阻变化来操作。

    Oscillators And Methods Of Operating The Same
    65.
    发明申请
    Oscillators And Methods Of Operating The Same 有权
    振荡器和操作方法相同

    公开(公告)号：US20120056685A1

    公开(公告)日：2012-03-08

    申请号：US13096627

    申请日：2011-04-28

    Applicant: Sung-chul Lee ,  Sun-ae Seo ,  Un-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

    Inventor： Sung-chul Lee ,  Sun-ae Seo ,  Un-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

    IPC: H03B1/00

    CPC classification number: H03B15/006 ,  B82Y25/00

    Abstract: An oscillator and a method of operating the same are provided, the oscillator may include a free layer, a pinned layer on a first surface of the free layer, and a reference layer on a second surface of the free layer. The free layer may have a variable magnetization direction. The pinned layer may have a pinned magnetization direction. The reference layer may have a magnetization direction non-parallel to the magnetization direction of the pinned layer.

    Abstract translation: 提供了振荡器及其操作方法，振荡器可以包括自由层，自由层的第一表面上的钉扎层和自由层的第二表面上的参考层。 自由层可以具有可变的磁化方向。 被钉扎层可以具有钉扎的磁化方向。 参考层可以具有与被钉扎层的磁化方向不平行的磁化方向。

    Magnetoresistive element
    66.
    发明申请
    Magnetoresistive element 有权
    磁阻元件

    公开(公告)号：US20090278218A1

    公开(公告)日：2009-11-12

    申请号：US12385119

    申请日：2009-03-31

    Applicant: Kee-won Kim

    Inventor： Kee-won Kim

    IPC: H01L29/82

    CPC classification number: H01F10/3254 ,  B82Y25/00 ,  H01F10/3272 ,  H01L43/08

    Abstract: A magnetoresistive element is disclosed, wherein the magnetoresistive element is composed of a synthetic anti-ferromagnetic (SAF) structure that may include a first pinned layer, an intermediate layer, and a second pinned layer; and a Cr layer between the first pinned layer and the intermediate layer and/or the second pinned layer and the intermediate layer.

    Abstract translation: 公开了一种磁阻元件，其中磁阻元件由可包括第一固定层，中间层和第二固定层的合成反铁磁（SAF）结构组成; 以及在第一被钉扎层和中间层之间的Cr层和/或第二钉扎层和中间层。

    Magnetic random access memory devices, methods of driving the same and data writing and reading methods for the same
    67.
    发明申请
    Magnetic random access memory devices, methods of driving the same and data writing and reading methods for the same 有权
    磁性随机存取存储器件，驱动方法和数据写入和读取方法相同

    公开(公告)号：US20090251956A1

    公开(公告)日：2009-10-08

    申请号：US12385124

    申请日：2009-03-31

    Applicant: In-jun Hwang ,  Sun-ae Seo ,  Kee-won Kim ,  Kwang-seok Kim

    Inventor： In-jun Hwang ,  Sun-ae Seo ,  Kee-won Kim ,  Kwang-seok Kim

    IPC: G11C11/14 ,  G11C11/416 ,  H01L29/82

    CPC classification number: H01L27/228 ,  G11C11/161 ,  H01L43/08

    Abstract: A magnetic memory device includes a lower structure or an antiferromagnetic layer, a pinned layer, an information storage layer, and a free layer formed on the lower structure or the antiferromagnetic layer. In a method of operating a magnetic memory device, information from the storage information layer is read or stored after setting the magnetization of the free layer in a first magnetization direction. The information is stored when the first magnetization direction is opposite to a magnetization direction of the pinned layer, but is read when the first magnetization direction is the same as the magnetization direction of the pinned layer.

    Abstract translation: 磁存储器件包括下结构或反铁磁层，钉扎层，信息存储层和形成在下结构或反铁磁层上的自由层。 在操作磁存储器件的方法中，在将自由层的磁化设定为第一磁化方向之后，来自存储信息层的信息被读取或存储。 当第一磁化方向与被钉扎层的磁化方向相反时，存储信息，但是当第一磁化方向与被钉扎层的磁化方向相同时被读取。

    DATA STORAGE DEVICE USING MAGNETIC DOMAIN WALL MOVEMENT AND METHOD OF OPERATING THE SAME
    68.
    发明申请
    DATA STORAGE DEVICE USING MAGNETIC DOMAIN WALL MOVEMENT AND METHOD OF OPERATING THE SAME 有权
    使用磁畴壁移动的数据存储装置及其操作方法

    公开(公告)号：US20080137395A1

    公开(公告)日：2008-06-12

    申请号：US11764432

    申请日：2007-06-18

    Applicant: In-jun Hwang ,  Young-jin Cho ,  Sung-hoon Choa ,  Kee-won Kim ,  Kwang-seok Kim

    Inventor： In-jun Hwang ,  Young-jin Cho ,  Sung-hoon Choa ,  Kee-won Kim ,  Kwang-seok Kim

    IPC: G11C19/00

    CPC classification number: G11C11/15 ,  G11C19/0808 ,  G11C19/0841

    Abstract: Provided are a data storage device using magnetic domain wall movement and a method of operating the data storage device. The data storage device includes a first magnetic layer for writing data having two magnetic domains magnetized in opposite directions to each other and a second magnetic layer for storing data formed on at least one side of the first magnetic layer. The data storage device may further include a data recording device connected to both ends of the first magnetic layer and the end of the second magnetic layer which is not adjacent to the first magnetic layer, a read head formed a predetermined distance from the end of the second magnetic layer which is not adjacent to the first magnetic layer, and a current detector connected to the read head and the data recording device.

    Abstract translation: 提供了使用磁畴壁移动的数据存储装置和操作数据存储装置的方法。 数据存储装置包括用于写入具有彼此相反方向磁化的两个磁畴的数据的第一磁性层和用于存储形成在第一磁性层的至少一侧上的数据的第二磁性层。 数据存储装置还可以包括连接到第一磁性层的两端和不与第一磁性层相邻的第二磁性层的端部的数据记录装置，从头部的端部形成预定距离的读取头 与第一磁性层不相邻的第二磁性层和连接到读取头和数据记录装置的电流检测器。

    Magnetic memory device using magnetic domain motion
    69.
    发明申请
    Magnetic memory device using magnetic domain motion 有权
    磁存储器件采用磁畴运动

    公开(公告)号：US20070198618A1

    公开(公告)日：2007-08-23

    申请号：US11708352

    申请日：2007-02-21

    Applicant: Kee-won Kim ,  Tae-wan Kim ,  Young-jin Cho ,  In-jun Hwang

    Inventor： Kee-won Kim ,  Tae-wan Kim ,  Young-jin Cho ,  In-jun Hwang

    IPC: G06F15/02

    CPC classification number: G11C11/16 ,  G11C19/0808

    Abstract: Example embodiments may provide a magnetic memory device. The example embodiment magnetic memory devices may include a plurality of memory tracks, bit lines, connectors, a first input portion, and/or selectors. The memory track(s) may be stacked on a substrate to form a multi-stack. A plurality of magnetic domains may be formed in the memory track so that a data bit may be represented by a magnetic domain and may be stored in an array. The bit line(s) may be formed along respective memory tracks. The connector(s) may form a magnetic tunnel junction (MTJ) cell with one data bit region of the memory track. The first input portion may be electrically connected to each memory track and may input a magnetic domain motion signal to move data stored on a data bit region of the memory track to an adjoining data bit region. The selector(s) may select a memory track from a plurality of memory tracks on which a reading and/or writing operation may to be performed.

    Abstract translation: 示例性实施例可以提供磁存储器装置。 示例性实施例磁存储器件可以包括多个存储器轨道，位线，连接器，第一输入部分和/或选择器。 存储器轨道可以堆叠在衬底上以形成多堆叠。 可以在存储器轨道中形成多个磁畴，使得数据位可以由磁畴表示并且可以存储在阵列中。 位线可以沿着各个存储器轨道形成。 连接器可以形成具有存储器轨道的一个数据位区域的磁性隧道结（MTJ）单元。 第一输入部分可以电连接到每个存储器轨道，并且可以输入磁畴运动信号以将存储在存储器轨道的数据位区域上的数据移动到相邻的数据位区域。 选择器可以从其上可以执行读取和/或写入操作的多个存储器轨道中选择存储器轨道。

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