公开(公告)号：US20160027927A1

公开(公告)日：2016-01-28

申请号：US14429059

申请日：2014-07-25

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Zhengliang LI ,  Zhen LIU ,  Luke DING ,  Bin ZHANG ,  Zhanfeng CAO ,  Guanbao HUI

IPC: H01L29/786 ,  H01L29/45 ,  C22C9/00 ,  H01L29/66 ,  H01L21/443 ,  H01L21/4763 ,  H01L27/12 ,  H01L29/49

CPC classification number: H01L21/02304 ,  C22C9/00 ,  H01L21/28008 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/78606 ,  H01L41/0815

Abstract: A thin film transistor, a manufacturing method thereof and an array substrate are provided. The thin film transistor comprises: a gate electrode (11), a source electrode (15) and a drain electrode (16), and the thin film transistor further comprises a buffer layer (11) which is directly provided at one side or both sides of at least one of the gate electrode (11), the source electrode (15) and the drain electrode (16), wherein, the buffer layer (11) and at least one of the gate electrode (11), the source electrode (15) and the drain electrode (16) directly contacting the buffer layer (11) are conformal. Therefore, the adhesion between an electrode of the thin film transistor and a film layer contacting it is improved and at the same time an atom in the electrode of the thin film transistor is effectively prevented from diffusing to the film layer connected with it, and the reliability of the thin film transistor is improved and the production cost is reduced.

Abstract translation: 提供薄膜晶体管，其制造方法和阵列基板。 薄膜晶体管包括：栅电极（11），源电极（15）和漏电极（16），薄膜晶体管还包括缓冲层（11），其直接设置在一侧或两侧 的栅电极（11），源电极（15）和漏电极（16）中的至少一个，其中，缓冲层（11）和栅电极（11），源电极 15）和与缓冲层（11）直接接触的漏电极（16）是共形的。 因此，薄膜晶体管的电极和与其接触的膜层之间的粘附性得到改善，并且同时有效地防止了薄膜晶体管的电极中的原子扩散到与其连接的膜层，并且 提高了薄膜晶体管的可靠性，降低了生产成本。

公开(公告)号：US20150364327A1

公开(公告)日：2015-12-17

申请号：US14495409

申请日：2014-09-24

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Qi YAO ,  Feng ZHANG ,  Zhanfeng CAO ,  Zhengliang LI

IPC: H01L21/28 ,  C23C30/00 ,  C23C8/12 ,  H01L29/786 ,  H01L29/49

CPC classification number: C23C30/00 ,  C23C8/12 ,  H01L21/28008 ,  H01L29/786

Abstract: The present invention discloses a method for preparing a film and a method for preparing an array substrate, and an array substrate. The method for preparing a film comprises forming an AB alloy film subjected to oxidation treatment and forming a first metal A film, wherein the first metal A film is provided to contact with the AB alloy film subjected to oxidation treatment, wherein A is a first metal and B is a second metal, the second metal is selected from active metals in period 2 to period 4 of group 2, and the AB alloy film subjected to oxidation treatment is formed by forming an alloy film of a first metal A and a second metal B in the presence of an oxygen-containing gas.

Abstract translation: 本发明公开了一种薄膜的制造方法及阵列基板的制造方法以及阵列基板。 制备薄膜的方法包括：形成经过氧化处理的AB合金薄膜，并形成第一金属薄膜，其中第一金属薄膜设置成与经过氧化处理的AB合金膜接触，其中A是第一金属 B为第二金属，第二金属选自组2的周期2至周期4中的活性金属，经过氧化处理的AB合金膜通过形成第一金属A和第二金属 B在含氧气体存在下。