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61.发明授权
公开(公告)号：US5608241A
公开(公告)日：1997-03-04
申请号：US364472
申请日：1994-12-27
IPC分类号： H01L21/8247 , H01L27/105 , H01L27/115 , H01L29/788 , H01L29/792 , H01L27/10
CPC分类号： H01L27/105 , H01L27/115
摘要： In the memory cell matrix of a semiconductor integrated circuit device having a non-volatile semiconductor memory cell portion and a logic portion, a second-layered Al wires are formed on the first-layered Al wires, with an interlayer insulating film interposed therebetween. The pattern of the second-layered Al wires is the same as that of the first-layered Al wires. This structure reduces the labor for designing mask data, and increases the coating ratio of a resist to an Al layer while minimizing a reduction in the transmittance of ultraviolet ray. As a result, the amount of a reaction compound supplied from the resist into the Al layer for forming the second-layered Al wires increases, which prevents the second-layered Al wires from being undercut. Thus, the second and subsequent-layered Al wires of the logic portion can be effectively prevented from being thinned.
摘要翻译： 在具有非挥发性半导体存储单元部分和逻辑部分的半导体集成电路器件的存储单元矩阵中，在第一层Al布线上形成有二层Al布线，其间夹有层间绝缘膜。 第二层Al线的图案与第一层Al线的图案相同。 这种结构减少了设计掩模数据的劳动，并且增加了抗蚀剂与Al层的涂布比，同时使紫外线的透射率降低到最小。 结果，从抗蚀剂供给到用于形成第二层Al线的Al层中的反应化合物的量增加，这防止了第二层Al线被底切。 因此，可以有效地防止逻辑部分的第二层和后续的Al布线变薄。
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公开(公告)号：US5499332A
公开(公告)日：1996-03-12
申请号：US312934
申请日：1994-09-30
申请人： Masayuki Yoshida
发明人： Masayuki Yoshida
CPC分类号： G06T11/40
摘要： There are provided a character processing method and apparatus having a function to convert data such as a character or the like which has been encoded by a vector form, into data of a dot form. The apparatus has a converter to convert data of a vector form into data of a dot form, and a discriminating circuit to discriminate whether painting of an outline is omitted or not, on the basis of the size of output data after conversion into dot-form data. As the result of the discrimination, if the painting process should not be omitted, the painting process is executed. If the painting process can be omitted, the painting process is omitted. Even a large character can be processed at a high speed without deterioration in the quality, and a small character can be processed at a high speed at a high quality.
摘要翻译： 提供了一种具有将已经被矢量形式编码的诸如字符等的数据转换为点形式的数据的功能的字符处理方法和装置。 该装置具有转换器，用于将矢量形式的数据转换为点形式的数据，以及鉴别电路，用于基于转换成点形式之后的输出数据的大小来区分轮廓的绘制是否被省略 数据。 作为鉴别的结果，如果不应该省略绘画过程，则执行绘画过程。 如果可以省略绘画处理，则省略绘画处理。 甚至可以高速处理大字符而不会降低质量，并且可以以高质量高质量地处理小字符。
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公开(公告)号：US5498759A
公开(公告)日：1996-03-12
申请号：US170246
申请日：1993-12-27
申请人： Kazuya Nakada , Masayuki Yoshida
发明人： Kazuya Nakada , Masayuki Yoshida
CPC分类号： C23C22/44
摘要： The cleaned surface of an aluminum or aluminum alloy product, for example, aluminum coil, is treated with a 0.5 to 3 second spray of a chromating bath heated to 40.degree. to 60.degree. C., said bath having a pH of 1.0 to 3.0 and containing 0.1 to 3.0 g/L of tungstate ions and/or molybdate ions, 0.5 to 4.0 g/L of hexavalent chromium ions, 5.0 to 30.0 g/L of phosphate ions, and 0.05 to 2.0 g/L of free fluoride ions. A highly corrosion-resistant, highly paint-adherent chromate coating can thereby be formed on the surface of aluminum in less time than that required by prior phosphoric acid-based chromating treatments.
摘要翻译： PCT No.PCT / US92 / 04698 Sec。 371日期1993年12月27日第 102（e）日期1993年12月27日PCT提交1992年6月11日PCT公布。 公开号WO93 / 00457 日期：1993年1月7日铝或铝合金产品例如铝卷的清洁表面用加热至40℃至60℃的铬酸浴的0.5-3秒喷雾处理，所述浴具有 pH为1.0〜3.0，含有0.1〜3.0g / L的钨酸盐离子和/或钼酸根离子，0.5〜4.0g / L的六价铬离子，5.0〜30.0g / L的磷酸盐离子和0.05〜2.0g / L的游离氟离子。 因此，可以在比现有的磷酸基铬酸盐处理所需的时间更少的时间内在铝的表面上形成高度耐腐蚀，高涂料粘附的铬酸盐涂层。
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公开(公告)号：US5356491A
公开(公告)日：1994-10-18
申请号：US64085
申请日：1993-05-21
申请人： Tomoyuki Aoki , Masayuki Yoshida
发明人： Tomoyuki Aoki , Masayuki Yoshida
IPC分类号： C08F12/26 , C08F12/00 , C09D5/08 , C09D5/12 , C09D125/00 , C09D125/18 , C23C22/23 , C23C22/68 , C23C22/07
CPC分类号： C23C22/68 , C09D125/18 , C09D5/08 , C23C22/23
摘要： A superior protective prepainting treatment for tin plated steel surfaces, particularly DI cans, may be achieved by contacting the surface with an aqueous liquid composition containing from 1 to 30 g/L of phosphate ions, from 0.1 to 5 g/L of condensed phosphate ions, from 0.5 to 5 g/L of reducing agent, and from 0.1 to 20 g/L of dissolved solids of a water soluble aminated poly{vinyl phenol} resin.
摘要翻译： PCT No.PCT / US91 / 08405 Sec。 371日期：1993年5月21日 102（e）日期1993年5月21日PCT 1991年11月14日PCT。对镀锡钢表面，特别是DI罐的优异的保护性涂料处理可以通过使表面与含有1至30g / L磷酸根离子，0.1〜5g / L缩合磷酸根离子，0.5〜5g / L还原剂，0.1〜20g / L溶解固体的水溶性胺化聚{乙烯基苯酚} 树脂。
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65.发明授权Manufacturing method for a floating gate semiconductor memory device by forming cell slits 失效浮动栅极半导体存储器件的制造方法通过形成细胞片
公开(公告)号：US5219775A
公开(公告)日：1993-06-15
申请号：US836592
申请日：1992-02-18
申请人： Yukihiro Saeki , Osamu Matsumoto , Masayuki Yoshida , Takahide Mizutani , Nobuyoshi Chida , Tomohisa Shigematsu , Teruo Uemura , Kenji Toyoda , Hiroyuki Takamura
发明人： Yukihiro Saeki , Osamu Matsumoto , Masayuki Yoshida , Takahide Mizutani , Nobuyoshi Chida , Tomohisa Shigematsu , Teruo Uemura , Kenji Toyoda , Hiroyuki Takamura
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11521 , Y10S148/106
摘要： A manufacturing method of a semiconductor memory device includes the steps of selectively forming a field oxide film and a gate oxide film on a semiconductor substrate, depositing a first conductive layer on an entire surface of the resultant structure, selectively etching the first conductive layer located in a region other than an element region, depositing a second conductive layer on an entire surface of the resultant structure, and etching the first conductive layer and the second conductive layer using the same mask to form a plurality of floating gates by the first conductive layer and to form a plurality of control gates by the second conductive layer, wherein the step of selectively etching the first conductive layer includes the first etching step of forming cell slits for separating the plurality of floating gates from each other and the second etching step of forming removed regions each of which includes only one end of each of the plurality of control gates.
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66.发明授权Method for manufacturing semiconductor device having a non-volatile memory cell and logic regions by using a CVD second insulating film 失效使用CVD第二绝缘膜制造具有非易失性存储单元和逻辑区域的半导体器件的方法
公开(公告)号：US5094967A
公开(公告)日：1992-03-10
申请号：US620701
申请日：1990-12-03
IPC分类号： H01L21/82 , H01L21/8234 , H01L21/8247 , H01L27/088 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11526 , H01L21/82 , H01L27/115 , H01L27/11539 , Y10S148/138
摘要： A method for manufacturing a semiconductor substrate device having a non-volatile memory cell region and a logic region including MOS transistors. A first insulating film and a first electrode layer are formed on a semiconductor substrate. Only those portions of the first insulating film and first electrode layer which are located in the logic region are removed, without removing those portions of the first insulating film and first electrode layer which are located in the non-volatile memory cell region. A sacrificial film is deposited for insulation over the entire surface of the memory cell region and logic region, and then a resist film is coated on the sacrificial film. Subsequently, impurity ions are implanted into a desired channel region located in the logic region. The resist film and sacrificial film are removed, and thereafter a second insulating film and a second electrode layer are formed.
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67.发明授权
公开(公告)号：US5067119A
公开(公告)日：1991-11-19
申请号：US688798
申请日：1991-04-22
申请人： Masayuki Yoshida , Junichi Yoshio , Osamu Watanabe
发明人： Masayuki Yoshida , Junichi Yoshio , Osamu Watanabe
CPC分类号： H03G5/16 , G11B27/002 , G11B27/105 , G11B27/107 , H03G3/005 , G11B2220/20 , G11B2220/2545 , G11B2220/65 , G11B2220/90 , G11B27/11
摘要： A recording media playing apparatus including tonal response control circuit configured to control the tone of reproduced sounds, by controlling signal levels of frequency components in a plurality of frequency bands, which are set to divide the frequency range of audio signals read out from the recording media, to designated variation ratios. The apparatus further comprises a memory device, a memory control device for storing, in response to a reproducing-tone memorizing command, data representing the variation ratios in the memory device correspondingly to identification information of each of the recording media, the data representing the variation ratios being stored as tone data, and a tonal response setting device for reading out the tone data using the identification information, the tone data corresponding to a recording medium to be played, and subsequently supplying the variation ratios represented by the tone data to the tonal response control circuit, thereby setting the tone of the reproduced sound. With this arrangement, the tonal response of the apparatus can be set automatically according to the type of music selections to be played.
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公开(公告)号：US4899331A
公开(公告)日：1990-02-06
申请号：US113693
申请日：1987-10-26
申请人： Naoki Masaki , Masayuki Yoshida
发明人： Naoki Masaki , Masayuki Yoshida
CPC分类号： G11B17/228 , G11B19/02 , G11B27/002 , G11B27/11 , G11B2220/2545 , G11B2220/65 , G11B27/105
摘要： A disk player providing random disk or piece selection upon turning on of the power supply. According to one aspect of the invention, a piece on an available disk is randomly selected as soon as the disk player is turned on. According to another aspect of the invention, particularly applicable to multi-disk players, the random number is formed by a counter running at a fast rate. When the power is turned on, the counter is started and a mechanical component begins movement toward another position. Only when the component is detected to have arrived, is the counter read to provide the random number for disk or piece selection.
摘要翻译： 在打开电源时提供随机磁盘或片选的磁盘播放器。 根据本发明的一个方面，一旦盘播放器被打开，随机地选择可用盘上的片段。 根据本发明的另一方面，特别适用于多盘播放器，随机数由以快速率运行的计数器形成。 当电源打开时，计数器启动，机械部件开始向另一个位置移动。 只有当组件被检测到已经到达时，计数器读取才能提供用于磁盘或片选的随机数。
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公开(公告)号：US4642812A
公开(公告)日：1987-02-10
申请号：US726267
申请日：1985-04-23
CPC分类号： H04S1/007
摘要： A method for performing sound field enlargement in a digital audio reproducing apparatus such as a compact disc player. A sum is calculated between each received pair of right-channel and left-channel data read from the disc, and the resulting sum data is stored in a random access memory. After a predetermined delay time, the sum data are read from the memory and multiplexed with the then-incoming right-channel and left-channel data. The resulting data stream is converted to respective right-channel, left-channel, and delayed-sum analog signals, which are then subjected to low-pass filtering. The filtered signals are processed in a conventional manner to yield outputs signals which, when reproduced, produce a perception of an enlarged sound field.
摘要翻译： 一种用于在诸如光盘播放器的数字音频再现装置中执行声场放大的方法。 在从盘读取的每个接收的右声道和左声道数据对之间计算和，并将所得到的和数据存储在随机存取存储器中。 在预定的延迟时间之后，从存储器中读取和数据，并与随后的右声道和左声道数据进行多路复用。 所得到的数据流被转换成相应的右声道，左声道和延迟和模拟信号，然后进行低通滤波。 滤波后的信号以常规方式进行处理，以产生输出信号，当再现时产生放大声场的感知。
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公开(公告)号：USD668694S1
公开(公告)日：2012-10-09
申请号：US29394896
申请日：2011-06-22
申请人： Takabumi Tezuka , Masayuki Yoshida
设计人： Takabumi Tezuka , Masayuki Yoshida
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